| Patent | Date |
|---|
Single transistor charge transfer random access memory
Grant 7,973,348 - Dalton , et al. July 5, 2 | 2011-07-05 |
Ferroelectric transistor for storing two data bits
Grant 7,034,349 - Dimmler , et al. April 25, 2 | 2006-04-25 |
Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric
Grant 6,908,772 - Gnadinger June 21, 2 | 2005-06-21 |
Ferroelectric transistor for storing two data bits
Grant 6,888,736 - Dimmler , et al. May 3, 2 | 2005-05-03 |
Ferroelectric transistor with enhanced data retention
Grant 6,825,517 - Dimmler , et al. November 30, 2 | 2004-11-30 |
Ferroelectric transistor with enhanced data retention
Grant 6,790,679 - Dimmler , et al. September 14, 2 | 2004-09-14 |
Ferroelectric transistor for storing two data bits
App 20040141357 - Dimmler, Klaus ; et al. | 2004-07-22 |
Ferroelectric transistor for storing two data bits
Grant 6,714,435 - Dimmler , et al. March 30, 2 | 2004-03-30 |
Ferroelectric transistor for storing two data bits
App 20040057319 - Dimmler, Klaus ; et al. | 2004-03-25 |
Ferroelectric Transistor For Storing Two Data Bits
App 20040057274 - Dimmler, Klaus ; et al. | 2004-03-25 |
Ferroelectric transistor with enhanced data retention
App 20040041186 - Dimmler, Klaus ; et al. | 2004-03-04 |
Ferroelectric transistor with enhanced data retention
App 20040041180 - Dimmler, Klaus ; et al. | 2004-03-04 |
Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric
App 20040026725 - Gnadinger, Alfred P. | 2004-02-12 |
Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric
Grant 6,674,110 - Gnadinger January 6, 2 | 2004-01-06 |
Single transistor rare earth manganite ferroelectric nonvolatile memory cell
App 20020164850 - Gnadinger, Alfred P. | 2002-11-07 |
Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric
App 20020153542 - Gnadinger, Alfred P. | 2002-10-24 |
Data compression and decompression using memory spaces of more than one size
Grant 5,627,995 - Miller , et al. May 6, 1 | 1997-05-06 |
Method of making a ferroelectric capacitor and forming local interconnect
Grant 5,273,927 - Gnadinger December 28, 1 | 1993-12-28 |
High density data storage using stacked wafers
Grant 5,229,647 - Gnadinger July 20, 1 | 1993-07-20 |
Ferroelectric capacitor and method for forming local interconnect
Grant 5,119,154 - Gnadinger June 2, 1 | 1992-06-02 |
Timepiece communication system
Grant 4,800,543 - Lyndon-James , et al. January 24, 1 | 1989-01-24 |
Zero drain overlap and self aligned contact method for MOS devices
Grant 4,486,943 - Ryden , et al. December 11, 1 | 1984-12-11 |
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