| Patent | Date |
|---|
RRAM devices with reduced forming voltage
Grant 11,342,499 - Glassman , et al. May 24, 2 | 2022-05-24 |
A Resistive Random Access Memory Device And Methods Of Fabrication
App 20200203602 - Asuri; Namrata S. ; et al. | 2020-06-25 |
Rram Devices With Reduced Forming Voltage
App 20200144496 - GLASSMAN; Timothy E. ; et al. | 2020-05-07 |
Bottom-up Fill (buf) Of Metal Features For Semiconductor Structures
App 20180130707 - CLENDENNING; Scott B. ; et al. | 2018-05-10 |
Metal-insulator-metal (MIM) capacitor with insulator stack having a plurality of metal oxide layers
Grant 9,691,839 - Lindert , et al. June 27, 2 | 2017-06-27 |
Atomic Layer Deposition (ald) Of Taalc For Capacitor Integration
App 20140001598 - Lindert; Nick ; et al. | 2014-01-02 |
Metal-insulator-metal (mim) Capacitor With Insulator Stack Having A Plurality Of Metal Oxide Layers
App 20130270676 - Lindert; Nick ; et al. | 2013-10-17 |
Methods to form memory devices having a capacitor with a recessed electrode
Grant 8,441,097 - Steigerwald , et al. May 14, 2 | 2013-05-14 |
Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
Grant 8,299,286 - Gardiner , et al. October 30, 2 | 2012-10-30 |
Source Reagent Compositions And Method For Forming Metal Films On A Substrate By Chemical Vapor Deposition
App 20110171382 - Gardiner; Robin A. ; et al. | 2011-07-14 |
Methods To Form Memory Devices Having A Capacitor With A Recessed Electrode
App 20110147888 - Steigerwald; Joseph M. ; et al. | 2011-06-23 |
Method For Depositing Gate Metal For CMOS Devices
App 20110147851 - Thomas; Christopher D. ; et al. | 2011-06-23 |
Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
Grant 7,323,581 - Gardiner , et al. January 29, 2 | 2008-01-29 |
Reducing variability in delivery rates of solid state precursors
App 20060102079 - Glassman; Timothy E. ; et al. | 2006-05-18 |
Atomic layer deposition of high quality high-k transition metal and rare earth oxides
App 20060045968 - Metz; Matthew V. ; et al. | 2006-03-02 |
Method for making a semiconductor device having a high-k gate dielectric
App 20040180523 - Brask, Justin K. ; et al. | 2004-09-16 |
Method for making a semiconductor device having an ultra-thin high-k gate dielectric
Grant 6,787,440 - Parker , et al. September 7, 2 | 2004-09-07 |
Method for making a semiconductor device having an ultra-thin high-k gate dielectric
App 20040110361 - Parker, Christopher G. ; et al. | 2004-06-10 |
Method for making a semiconductor device having a high-k gate dielectric
Grant 6,716,707 - Brask , et al. April 6, 2 | 2004-04-06 |
Method for making a semiconductor device having a high-k gate dielectric
Grant 6,713,358 - Chau , et al. March 30, 2 | 2004-03-30 |
Method of forming metal films on a substrate by chemical vapor deposition
Grant 6,110,529 - Gardiner , et al. August 29, 2 | 2000-08-29 |
Method of forming bismuth-containing films by using bismuth amide compounds
Grant 5,902,639 - Glassman , et al. May 11, 1 | 1999-05-11 |
Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
Grant 5,820,664 - Gardiner , et al. October 13, 1 | 1998-10-13 |
Lanthanide/phosphorus precursor compositions for MOCVD of lanthanide/phosphorus oxide films
Grant 5,698,022 - Glassman , et al. December 16, 1 | 1997-12-16 |
Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same
Grant 5,679,815 - Kirlin , et al. October 21, 1 | 1997-10-21 |
Chemical vapor deposition of tantalum- or niobium-containing coatings
Grant 5,677,002 - Kirlin , et al. October 14, 1 | 1997-10-14 |
| 