| Patent | Date |
|---|
Germanium-rich nanowire transistor with relaxed buffer layer
Grant 11,450,739 - Glass , et al. September 20, 2 | 2022-09-20 |
Integrated circuit structures having germanium-based channels
Grant 11,437,472 - Chouksey , et al. September 6, 2 | 2022-09-06 |
Methods of forming dislocation enhanced strain in NMOS and PMOS structures
Grant 11,411,110 - Jackson , et al. August 9, 2 | 2022-08-09 |
Methods Of Forming Dislocation Enhanced Strain In Nmos And Pmos Structures
App 20220238714 - Jackson; Michael ; et al. | 2022-07-28 |
Source & Drain Dopant Diffusion Barriers For N-type Germanium Transistors
App 20220199402 - Ganguly; Koustav ; et al. | 2022-06-23 |
Methods Of Forming Dislocation Enhanced Strain In Nmos And Pmos Structures
App 20220059699 - Jackson; Michael ; et al. | 2022-02-24 |
Methods of forming dislocation enhanced strain in NMOS structures
Grant 11,107,920 - Jackson , et al. August 31, 2 | 2021-08-31 |
Methods of forming doped source/drain contacts and structures formed thereby
Grant 11,004,978 - Glass , et al. May 11, 2 | 2021-05-11 |
Gate-all-around Integrated Circuit Structures Having Nanowires With Tight Vertical Spacing
App 20200357930 - GLASS; Glenn ; et al. | 2020-11-12 |
High Breakdown Voltage Structure For High Performance Gan-based Hemt And Mos Devices To Enable Gan C-mos
App 20200211842 - GLASS; Glenn ; et al. | 2020-07-02 |
Gan Based Hemt Device Relaxed Buffer Structure On Silicon
App 20200194577 - GLASS; Glenn ; et al. | 2020-06-18 |
High Conductivity Source And Drain Structure For Hemt Devices
App 20200194551 - GLASS; Glenn ; et al. | 2020-06-18 |
Methods Of Forming Doped Source/drain Contacts And Structures Formed Thereby
App 20200176601 - Glass; Glenn ; et al. | 2020-06-04 |
Methods of forming self aligned spacers for nanowire device structures
Grant 10,672,868 - Jambunathan , et al. | 2020-06-02 |
Systems, methods and devices for isolation for subfin leakage
Grant 10,644,112 - Chu-Kung , et al. | 2020-05-05 |
Gate-all-around Integrated Circuit Structures Having Underlying Dopant-diffusion Blocking Layers
App 20200105872 - GLASS; Glenn ; et al. | 2020-04-02 |
Gate-all-around Integrated Circuit Structures Having Vertically Discrete Source Or Drain Structures
App 20200105871 - GLASS; Glenn ; et al. | 2020-04-02 |
Germanium-rich Nanowire Transistor With Relaxed Buffer Layer
App 20200091287 - Glass; Glenn ; et al. | 2020-03-19 |
Methods of forming doped source/drain contacts and structures formed thereby
Grant 10,573,750 - Glass , et al. Feb | 2020-02-25 |
Integrated Circuit Structures Having Germanium-based Channels
App 20200006492 - CHOUKSEY; Siddharth ; et al. | 2020-01-02 |
Methods Of Forming Dislocation Enhanced Strain In Nmos Structures
App 20190334034 - JACKSON; Michael ; et al. | 2019-10-31 |
Methods of forming dislocation enhanced strain in NMOS structures
Grant 10,396,201 - Jackson , et al. A | 2019-08-27 |
Systems, Methods And Devices For Isolation For Subfin Leakage
App 20190189749 - Chu-Kung; Benjamin ; et al. | 2019-06-20 |
Methods Of Forming Self Aligned Spacers For Nanowire Device Structures
App 20180358436 - Jambunathan; Karthik ; et al. | 2018-12-13 |
Methods Of Forming Doped Source/drain Contacts And Structures Formed Thereby
App 20180261696 - Glass; Glenn ; et al. | 2018-09-13 |
Surface Encapsulation For Wafer Bonding
App 20170062569 - JUN; Kimin ; et al. | 2017-03-02 |
Methods Of Forming Dislocation Enhanced Strain In Nmos Structures
App 20160204256 - Jackson; Michael ; et al. | 2016-07-14 |
Formation of strain-inducing films
Grant 7,678,631 - Murthy , et al. March 16, 2 | 2010-03-16 |
Formation of strain-inducing films
App 20070281411 - Murthy; Anand ; et al. | 2007-12-06 |
| 