| Patent | Date |
|---|
Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure
Grant 7,510,961 - Givens March 31, 2 | 2009-03-31 |
Semiconductor device with metal fill by treatment of mobility layers including forming a refractory metal nitride using TMEDT
Grant 6,984,874 - Givens , et al. January 10, 2 | 2006-01-10 |
Three-level unitary interconnect structure
App 20050230832 - Givens, John H. | 2005-10-20 |
Semiconductor device with metal fill by treatment of mobility layers
App 20050006769 - Givens, John H. ; et al. | 2005-01-13 |
Method for metal fill by treatment of mobility layers
Grant 6,812,139 - Givens , et al. November 2, 2 | 2004-11-02 |
Processing methods for providing metal-comprising materials within high aspect ratio openings
Grant 6,790,764 - Givens September 14, 2 | 2004-09-14 |
Semiconductor processing methods of forming integrated circuitry
Grant 6,787,447 - Givens September 7, 2 | 2004-09-07 |
Utilization of disappearing silicon hard mask for fabrication of semiconductor structures
Grant 6,787,472 - Givens , et al. September 7, 2 | 2004-09-07 |
Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication
Grant 6,784,550 - Farrar , et al. August 31, 2 | 2004-08-31 |
Three-level unitary interconnect structure
Grant 6,781,235 - Givens August 24, 2 | 2004-08-24 |
Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication
Grant 6,774,035 - Farrar , et al. August 10, 2 | 2004-08-10 |
Methods for utilization of disappearing silicon hard mask for fabrication of semiconductor structures
Grant 6,689,693 - Givens , et al. February 10, 2 | 2004-02-10 |
Utilization of disappearing silicon hard mask for fabrication of semiconductor structures
App 20030143856 - Givens, John H. ; et al. | 2003-07-31 |
Processing methods for providing metal-comprising materials within high aspect ratio openings
App 20030113994 - Givens, John H. | 2003-06-19 |
Method for metal fill by treatment of mobility layers
App 20030045093 - Givens, John H. ; et al. | 2003-03-06 |
Utilization of disappearing silicon hard mask for fabrication of semiconductor structures
App 20030036271 - Givens, John H. ; et al. | 2003-02-20 |
Reduced RC delay between adjacent substrate wiring lines
App 20020135042 - Givens, John H. | 2002-09-26 |
Utilization of disappearing silicon hard mask for fabrication of semiconductor structures
App 20020102854 - Givens, John H. ; et al. | 2002-08-01 |
Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure
Grant 6,404,053 - Givens June 11, 2 | 2002-06-11 |
Reduced RC delay between adjacent substrate wiring lines
Grant 6,396,119 - Givens May 28, 2 | 2002-05-28 |
Semiconductor Processing Methods of Forming Integrated Circuity
App 20020048932 - Givens, John H. | 2002-04-25 |
Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication
App 20020033498 - Farrar, Paul A. ; et al. | 2002-03-21 |
Interconnect structure and method of making
App 20020019127 - Givens, John H. | 2002-02-14 |
Thermal processing of metal alloys for an improved CMP process in integrated circuit fabricatin
App 20020006719 - Farrar, Paul A. ; et al. | 2002-01-17 |
Utilization Of Energy Absorbing Layer To Improve Metal Flow And Fill In A Novel Interconnect Structure
App 20010049190 - GIVENS, JOHN H. | 2001-12-06 |
Utilization Of Energy Absorbing Layer To Improve Metal Flow And Fill In A Novel Interconnect Structure
App 20010045654 - GIVENS, JOHN H. | 2001-11-29 |
Processing methods for providing metal-comprising materials within high aspect ratio openings
App 20010043985 - Givens, John H. | 2001-11-22 |
Semiconductor processing methods of forming integrated circuitry and integrated circuitry constructions
Grant 6,319,813 - Givens November 20, 2 | 2001-11-20 |
High aspect ratio metallization structures for shallow junction devices, and methods of forming the same
Grant 6,320,261 - Burton , et al. November 20, 2 | 2001-11-20 |
Reduced RC delay between adjacent substrate wiring lines
Grant 6,309,946 - Givens October 30, 2 | 2001-10-30 |
Method of forming a sputtering apparatus
Grant 6,267,852 - Givens , et al. July 31, 2 | 2001-07-31 |
Integrated circuit metallization with superconductor BEOL wiring
Grant 6,087,711 - Givens July 11, 2 | 2000-07-11 |
Method for fabricating conductive components in microelectronic devices and substrate structures thereof
Grant 6,080,655 - Givens , et al. June 27, 2 | 2000-06-27 |
Method of making an interconnect structure
Grant 6,060,385 - Givens May 9, 2 | 2000-05-09 |
Method and apparatus for forming features in holes, trenches and other voids in the manufacturing of microelectronic devices
Grant 6,060,386 - Givens May 9, 2 | 2000-05-09 |
Method for improved metal fill by treatment of mobility layers
Grant 6,057,231 - Givens , et al. May 2, 2 | 2000-05-02 |
Metal fill by treatment of mobility layers
Grant 6,054,768 - Givens , et al. April 25, 2 | 2000-04-25 |
Deposition chamber with a biased substrate configuration
Grant 6,051,121 - Givens , et al. April 18, 2 | 2000-04-18 |
Method for improved bottom and side wall coverage of high aspect ratio features
Grant 5,985,103 - Givens , et al. November 16, 1 | 1999-11-16 |
In situ preclean in a PVD chamber with a biased substrate configuration
Grant 5,807,467 - Givens , et al. September 15, 1 | 1998-09-15 |
Reduced RC delay between adjacent substrate wiring lines
Grant 5,776,828 - Givens July 7, 1 | 1998-07-07 |
Method of forming contact vias and interconnect channels in a dielectric layer stack with a single mask
Grant 5,726,100 - Givens March 10, 1 | 1998-03-10 |
Sputter deposition method for improved bottom and side wall coverage of high aspect ratio features
Grant 5,658,438 - Givens , et al. August 19, 1 | 1997-08-19 |
Plug strap process utilizing selective nitride and oxide etches
Grant 5,545,581 - Armacost , et al. August 13, 1 | 1996-08-13 |
Process for improving sheet resistance of an integrated circuit device gate
Grant 5,268,330 - Givens , et al. December 7, 1 | 1993-12-07 |
Method of making mixed metal oxide coated substrates
Grant 5,055,169 - Hock, Jr. , et al. October 8, 1 | 1991-10-08 |
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