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Memory device with unipolar resistive memory cells with programmable resistive element end control transistor and set/reset operations of thereof Grant 10,297,319 - Giraud , et al. | 2019-05-21 |
Sram Cell App 20180277197 - Noel; Jean-Philippe ;   et al. | 2018-09-27 |
Integrated circuit comprising transistors with different threshold voltages Grant 9,911,737 - Giraud , et al. March 6, 2 | 2018-03-06 |
Unipolar Resistive Memory App 20170316825 - Giraud; Bastien ;   et al. | 2017-11-02 |
Device with SRAM memory cells including means for polarizing wells of memory cell transistors Grant 9,542,996 - Thomas , et al. January 10, 2 | 2017-01-10 |
Programmable-resistance non-volatile memory Grant 9,508,434 - Benoist , et al. November 29, 2 | 2016-11-29 |
Method for controlling an integrated circuit Grant 9,479,168 - Giraud , et al. October 25, 2 | 2016-10-25 |
Device and method for writing data to a resistive memory Grant 9,449,688 - Thomas , et al. September 20, 2 | 2016-09-20 |
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Device And Method For Writing Data To A Resistive Memory App 20160071588 - Harrand; Michel ;   et al. | 2016-03-10 |
Device And Method For Writing Data To A Resistive Memory App 20160071589 - Thomas; Olivier ;   et al. | 2016-03-10 |
Memoire Non Volatile A Resistance Programmable App 20160027509 - BENOIST; Thomas-Medhi ;   et al. | 2016-01-28 |
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Method for generating a topography of an FDSOI integrated circuit Grant 9,092,590 - Giraud , et al. July 28, 2 | 2015-07-28 |
Integrated circuit using FDSOI technology, with well sharing and means for biasing oppositely doped ground planes present in a same well Grant 9,093,499 - Noel , et al. July 28, 2 | 2015-07-28 |
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Integrated circuit comprising a clock tree cell Grant 8,937,505 - Giraud , et al. January 20, 2 | 2015-01-20 |
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Method For Generating A Topography Of An Fdsoi Integrated Circuit App 20140173544 - Giraud; Bastien ;   et al. | 2014-06-19 |
Self-contained Integrated Circuit Including Adjacent Cells Of Different Types App 20140077300 - Noel; Jean-Philippe ;   et al. | 2014-03-20 |
Silicon-on-insulator CMOS integrated circuit with multiple threshold voltages and a method for designing the same Grant 8,482,070 - Flatresse , et al. July 9, 2 | 2013-07-09 |
Integrated Circuit Using Fdsoi Technology, With Well Sharing And Means For Biasing Oppositely Doped Ground Planes Present In A Same Well App 20130089978 - Noel; Jean-Philippe ;   et al. | 2013-04-11 |
SRAM memory cell with double gate transistors provided means to improve the write margin Grant 8,320,198 - Thomas , et al. November 27, 2 | 2012-11-27 |
Sram Memory Cell With Double Gate Transistors Provided With Means To Improve The Write Margin App 20100315889 - Thomas; Olivier ;   et al. | 2010-12-16 |
Asymmetrical SRAM cell with 4 double-gate transistors Grant 7,733,688 - Giraud , et al. June 8, 2 | 2010-06-08 |
Asymmetrical SRAM cell with 4 double-gate transistors App 20080298118 - Giraud; Bastien ;   et al. | 2008-12-04 |