| Patent | Date |
|---|
Gallium nitride (GaN) transistor structures on a substrate
Grant 11,195,944 - Then , et al. December 7, 2 | 2021-12-07 |
III-N epitaxial device structures on free standing silicon mesas
Grant 11,177,376 - Dasgupta , et al. November 16, 2 | 2021-11-16 |
Gate stack design for GaN e-mode transistor performance
Grant 11,114,556 - Dasgupta , et al. September 7, 2 | 2021-09-07 |
Techniques for monolithic co-integration of polycrystalline thin-film bulk acoustic resonator devices and monocrystalline III-N semiconductor transistor devices
Grant 11,056,532 - Then , et al. July 6, 2 | 2021-07-06 |
Microelectronic Devices Having Air Gap Structures Integrated With Interconnect For Reduced Parasitic Capacitances
App 20210202374 - THEN; Han Wui ; et al. | 2021-07-01 |
Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances
Grant 10,998,260 - Then , et al. May 4, 2 | 2021-05-04 |
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
Grant 10,930,500 - Dasgupta , et al. February 23, 2 | 2021-02-23 |
Ge NANO wire transistor with GAAS as the sacrificial layer
Grant 10,930,766 - Rachmady , et al. February 23, 2 | 2021-02-23 |
Semiconductor device with released source and drain
Grant 10,903,364 - Rachmady , et al. January 26, 2 | 2021-01-26 |
Gate Stack Design For Gan E-mode Transistor Performance
App 20200403092 - DASGUPTA; SANSAPTAK ; et al. | 2020-12-24 |
Group III-N MEMS structures on a group IV substrate
Grant 10,850,977 - Then , et al. December 1, 2 | 2020-12-01 |
Nanowire transistors with embedded dielectric spacers
Grant 10,840,352 - Rachmady , et al. November 17, 2 | 2020-11-17 |
Gate stack design for GaN e-mode transistor performance
Grant 10,804,386 - Dasgupta , et al. October 13, 2 | 2020-10-13 |
Method to achieve a uniform Group IV material layer in an aspect ratio trapping trench
Grant 10,784,352 - Gardner , et al. Sept | 2020-09-22 |
N-channel gallium nitride transistors
Grant 10,756,183 - Then , et al. A | 2020-08-25 |
Nanowire Transistors With Embedded Dielectric Spacers
App 20200168703 - Rachmady; Willy ; et al. | 2020-05-28 |
Semiconductor devices with raised doped crystalline structures
Grant 10,665,708 - Radosavljevic , et al. | 2020-05-26 |
III-V finfet transistor with V-groove S/D profile for improved access resistance
Grant 10,644,137 - Rachmady , et al. | 2020-05-05 |
Techniques For Monolithic Co-integration Of Polycrystalline Thin-film Bulk Acoustic Resonator Devices And Monocrystalline Iii-n
App 20200119087 - THEN; HAN WUI ; et al. | 2020-04-16 |
Transistors including retracted raised source/drain to reduce parasitic capacitances
Grant 10,622,448 - Then , et al. | 2020-04-14 |
Transistors having ultra thin fin profiles and their methods of fabrication
Grant 10,593,785 - Gardner , et al. | 2020-03-17 |
Envelope-tracking control techniques for highly-efficient RF power amplifiers
Grant 10,574,187 - Then , et al. Feb | 2020-02-25 |
Multiple stacked field-plated GaN transistor and interlayer dielectrics to improve breakdown voltage and reduce parasitic capacitances
Grant 10,553,689 - Then , et al. Fe | 2020-02-04 |
Self-aligned transistor structures enabling ultra-short channel lengths
Grant 10,546,927 - Then , et al. Ja | 2020-01-28 |
Integration of III-V devices on Si wafers
Grant 10,475,888 - Dasgupta , et al. Nov | 2019-11-12 |
Microelectronic Devices Having Air Gap Structures Integrated With Interconnect For Reduced Parasitic Capacitances
App 20190304896 - THEN; Han Wui ; et al. | 2019-10-03 |
High electron mobility transistors with localized sub-fin isolation
Grant 10,431,690 - Rachmady , et al. O | 2019-10-01 |
Wurtzite Heteroepitaxial Structures With Inclined Sidewall Facets For Defect Propagation Control In Silicon Cmos-compatible Semi
App 20190287789 - Dasgupta; Sansaptak ; et al. | 2019-09-19 |
Heteroepitaxial structures with high temperature stable substrate interface material
Grant 10,388,777 - Dasgupta , et al. A | 2019-08-20 |
Gate Stack Design For Gan E-mode Transistor Performance
App 20190221660 - DASGUPTA; SANSAPTAK ; et al. | 2019-07-18 |
Ge Nano Wire Transistor With Gaas As The Sacrificial Layer
App 20190189770 - RACHMADY; Willy ; et al. | 2019-06-20 |
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
Grant 10,325,774 - Dasgupta , et al. | 2019-06-18 |
Semiconductor Device With Released Source And Drain
App 20190172941 - RACHMADY; Willy ; et al. | 2019-06-06 |
Iii-n Epitaxial Device Structures On Free Standing Silicon Mesas
App 20190172938 - DASGUPTA; Sansaptak ; et al. | 2019-06-06 |
Semiconductor Devices With Raised Doped Crystalline Structures
App 20190148533 - RADOSAVLJEVIC; Marko ; et al. | 2019-05-16 |
Iii-v Finfet Transistor With V-groove S/d Profile For Improved Access Resistance
App 20190148512 - RACHMADY; Willy ; et al. | 2019-05-16 |
Ge nano wire transistor with GaAs as the sacrificial layer
Grant 10,249,740 - Rachmady , et al. | 2019-04-02 |
Offstate parasitic leakage reduction for tunneling field effect transistors
Grant 10,249,742 - Le , et al. | 2019-04-02 |
III-N epitaxial device structures on free standing silicon mesas
Grant 10,229,991 - Dasgupta , et al. | 2019-03-12 |
Wafer Edge Protection For Crack-free Material Growth
App 20190067081 - GARDNER; Sanaz K. ; et al. | 2019-02-28 |
Integrated circuit die having reduced defect group III-nitride structures and methods associated therewith
Grant 10,217,673 - Dasgupta , et al. Feb | 2019-02-26 |
Transistors Including Retracted Raised Source/drain To Reduce Parasitic Capacitances
App 20190058042 - THEN; HAN WUI ; et al. | 2019-02-21 |
Semiconductor devices with raised doped crystalline structures
Grant 10,211,327 - Radosavljevic , et al. Feb | 2019-02-19 |
Method of fabricating semiconductor structures on dissimilar substrates
Grant 10,204,989 - Chu-Kung , et al. Feb | 2019-02-12 |
N-channel Gallium Nitride Transistors
App 20180350911 - Then; Han Wui ; et al. | 2018-12-06 |
Envelope-tracking Control Techniques For Highly-efficient Rf Power Amplifiers
App 20180342985 - THEN; HAN WUI ; et al. | 2018-11-29 |
Multiple Stacked Field-plated Gan Transistor And Interlayer Dielectrics To Improve Breakdown Voltage And Reduce Parasitic Capacitances
App 20180331191 - THEN; Han Wui ; et al. | 2018-11-15 |
Self-aligned Transistor Structures Enabling Ultra-short Channel Lengths
App 20180331182 - THEN; HAN WUI ; et al. | 2018-11-15 |
Integrated Circuit Die Having Reduced Defect Group Iii-nitride Structures And Methods Associated Therewith
App 20180315659 - DASGUPTA; Sansaptak ; et al. | 2018-11-01 |
Methods and structures to prevent sidewall defects during selective epitaxy
Grant 10,096,474 - Mukherjee , et al. October 9, 2 | 2018-10-09 |
III-N devices in Si trenches
Grant 10,096,682 - Dasgupta , et al. October 9, 2 | 2018-10-09 |
High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin
Grant 10,084,043 - Dewey , et al. September 25, 2 | 2018-09-25 |
A Method To Achieve A Uniform Group Iv Material Layer In An Aspect Ratio Trapping Trench
App 20180261498 - GARDNER; Sanaz K. ; et al. | 2018-09-13 |
N-channel gallium nitride transistors
Grant 10,056,456 - Then , et al. August 21, 2 | 2018-08-21 |
Transistors Having Ultra Thin Fin Profiles And Their Methods Of Fabrication
App 20180226496 - GARDNER; Sanaz K. ; et al. | 2018-08-09 |
Iii-n Epitaxial Device Structures On Free Standing Silicon Mesas
App 20180219087 - DASGUPTA; Sansaptak ; et al. | 2018-08-02 |
Semiconductor Devices With Raised Doped Crystalline Structures
App 20180190807 - RADOSAVLJEVIC; Marko ; et al. | 2018-07-05 |
GALLIUM NITRIDE (GaN) TRANSISTOR STRUCTURES ON A SUBSTRATE
App 20180175184 - THEN; HAN WUI ; et al. | 2018-06-21 |
Group Iii-n Mems Structures On A Group Iv Substrate
App 20180170747 - THEN; HAN WUI ; et al. | 2018-06-21 |
High Electron Mobility Transistors With Localized Sub-fin Isolation
App 20180158957 - RACHMADY; Willy ; et al. | 2018-06-07 |
Offstate Parasitic Leakage Reduction For Tunneling Field Effect Transistors
App 20180158933 - LE; Van H. ; et al. | 2018-06-07 |
Heteroepitaxial Structures With High Temperature Stable Substrate Interface Material
App 20180145164 - DASGUPTA; Sansaptak ; et al. | 2018-05-24 |
Ge Nano Wire Transistor With Gaas As The Sacrificial Layer
App 20180138289 - RACHMADY; Willy ; et al. | 2018-05-17 |
Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith
Grant 9,922,826 - Dasgupta , et al. March 20, 2 | 2018-03-20 |
N-channel Gallium Nitride Transistors
App 20180026097 - Then; Han Wui ; et al. | 2018-01-25 |
High Mobility Nanowire Fin Channel On Silicon Substrate Formed Using Sacrificial Sub-fin
App 20170358645 - DEWEY; GILBERT ; et al. | 2017-12-14 |
Integrated Circuit Die Having Reduced Defect Group Iii-nitride Layer And Methods Associated Therewith
App 20170352532 - DASGUPTA; Sansaptak ; et al. | 2017-12-07 |
Thin Channel Region On Wide Subfin
App 20170323963 - GARDNER; Sanaz K. ; et al. | 2017-11-09 |
Uniform Layers Formed with Aspect Ratio Trench Based Processes
App 20170317187 - GARDNER; Sanaz K. ; et al. | 2017-11-02 |
Nonplanar III-N transistors with compositionally graded semiconductor channels
Grant 9,806,203 - Then , et al. October 31, 2 | 2017-10-31 |
Method Of Fabricating Semiconductor Structures On Dissimilar Substrates
App 20170271448 - CHU-KUNG; Benjamin ; et al. | 2017-09-21 |
Ingaas Epi Structure And Wet Etch Process For Enabling Iii-v Gaa In Art Trench
App 20170263706 - GARDNER; Sanaz K. ; et al. | 2017-09-14 |
Methods And Structures To Prevent Sidewall Defects During Selective Epitaxy
App 20170256408 - MUKHERJEE; Niloy ; et al. | 2017-09-07 |
LOW SHEET RESISTANCE GaN CHANNEL ON Si SUBSTRATE USING InAlN AND AlGaN BI-LAYER CAPPING STACK
App 20170236928 - DASGUPTA; Sansaptak ; et al. | 2017-08-17 |
Wurtzite Heteroepitaxial Structures With Inclined Sidewall Facets For Defect Propagation Control In Silicon Cmos-compatible Semiconductor Devices
App 20170236704 - Dasgupta; Sansaptak ; et al. | 2017-08-17 |
Integration Of Iii-v Devices On Si Wafers
App 20170221999 - Dasgupta; Sansaptak ; et al. | 2017-08-03 |
NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY
App 20170213892 - Dasgupta; Sansaptak ; et al. | 2017-07-27 |
Iii-n Devices In Si Trenches
App 20170207307 - Dasgupta; Sansaptak ; et al. | 2017-07-20 |
Methods and structures to prevent sidewall defects during selective epitaxy
Grant 9,698,013 - Mukherjee , et al. July 4, 2 | 2017-07-04 |
Method of fabricating semiconductor structures on dissimilar substrates
Grant 9,698,222 - Chu-Kung , et al. July 4, 2 | 2017-07-04 |
Integration of III-V devices on Si wafers
Grant 9,673,045 - Dasgupta , et al. June 6, 2 | 2017-06-06 |
Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof
Grant 9,660,085 - Then , et al. May 23, 2 | 2017-05-23 |
Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack
Grant 9,660,064 - Dasgupta , et al. May 23, 2 | 2017-05-23 |
III-N devices in Si trenches
Grant 9,640,422 - Dasgupta , et al. May 2, 2 | 2017-05-02 |
Wide Band Gap Transistors On Non-native Semiconductor Substrates And Methods Of Manufacture Thereof
App 20160308041 - Then; Han Wui ; et al. | 2016-10-20 |
Nonplanar Iii-n Transistors With Compositionally Graded Semiconductor Channels
App 20160293774 - Then; Han Wui ; et al. | 2016-10-06 |
Method Of Fabricating Semiconductor Structures On Dissimilar Substrates
App 20160276438 - CHU-KUNG; Benjamin ; et al. | 2016-09-22 |
Composite High-K Metal Gate Stack for Enhancement Mode GaN Semiconductor Devices
App 20160204207 - THEN; HAN WUI ; et al. | 2016-07-14 |
Integration Of Iii-v Devices On Si Wafers
App 20160181085 - DASGUPTA; Sansaptak ; et al. | 2016-06-23 |
Methods And Structures To Prevent Sidewall Defects During Selective Epitaxy
App 20160181099 - MUKHERJEE; Niloy ; et al. | 2016-06-23 |
Nonplanar III-N transistors with compositionally graded semiconductor channels
Grant 9,373,693 - Then , et al. June 21, 2 | 2016-06-21 |
NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY
App 20160056244 - DASGUPTA; Sansaptak ; et al. | 2016-02-25 |
Iii-n Devices In Si Trenches
App 20150206796 - Dasgupta; Sansaptak ; et al. | 2015-07-23 |
Low Sheet Resistance GaN Channel on Si Substrates Using InAlN and AlGaN Bi-Layer Capping Stack
App 20150187924 - Dasgupta; Sansaptak ; et al. | 2015-07-02 |
Nonplanar Iii-n Transistors With Compositionally Graded Semiconductor Channels
App 20150064859 - THEN; Han Wui ; et al. | 2015-03-05 |
Nonplanar III-N transistors with compositionally graded semiconductor channels
Grant 8,896,101 - Then , et al. November 25, 2 | 2014-11-25 |
Non-planar semiconductor device having channel region with low band-gap cladding layer
Grant 8,785,909 - Radosavljevic , et al. July 22, 2 | 2014-07-22 |
Epitaxial film growth on patterned substrate
Grant 8,785,907 - Goel , et al. July 22, 2 | 2014-07-22 |
Group III-N transistors on nanoscale template structures
Grant 8,768,271 - Then , et al. July 1, 2 | 2014-07-01 |
Nonplanar Iii-n Transistors With Compositionally Graded Semiconductor Channels
App 20140175515 - THEN; Han Wui ; et al. | 2014-06-26 |
Group Iii-n Transistors On Nanoscale Template Structures
App 20140170998 - THEN; Han Wui ; et al. | 2014-06-19 |
Non-planar Semiconductor Device Having Channel Region With Low Band-gap Cladding Layer
App 20140084239 - Radosavljevic; Marko ; et al. | 2014-03-27 |
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