Gardner; Nathan F.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Gardner; Nathan F..The latest application filed is for "light emitting diodes with integrated reflector for a direct view display and method of making thereof".

Company Profile

3.44.41

Gardner; Nathan F. - Sunnyvale CA
Gardner; Nathan F. - San Jose CA
Gardner; Nathan F. - Mountain View CA
Gardner; Nathan F. - Champaign IL

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Light emitting diodes with integrated reflector for a direct view display and method of making thereof Grant 10,553,767 - Danesh , et al. Fe	2020-02-04
Semiconductor light emitting device growing active layer on textured surface Grant 10,312,404 - Yi , et al.	2019-06-04
Light Emitting Diodes With Integrated Reflector For A Direct View Display And Method Of Making Thereof App 20180198047 - DANESH; Fariba ; et al.	2018-07-12
Semiconductor Light Emitting Device Growing Active Layer On Textured Surface App 20180175236 - Yi; Sungsoo ; et al.	2018-06-21
Semiconductor light emitting device growing active layer on textured surface Grant 9,911,896 - Yi , et al. March 6, 2	2018-03-06
Iii-nitride Light Emitting Device With Double Heterostructure Light Emitting Region App 20170117440 - SHEN; YU-CHEN ; et al.	2017-04-27
Controlling pit formation in a III-nitride device Grant 9,012,250 - Yi , et al. April 21, 2	2015-04-21
Grown photonic crystals in semiconductor light emitting devices Grant 9,000,450 - Wierer, Jr. , et al. April 7, 2	2015-04-07
III-nitride light emitting device with double heterostructure light emitting region Grant 8,847,252 - Shen , et al. September 30, 2	2014-09-30
Methods for relaxation and transfer of strained layers and structures fabricated thereby Grant 8,492,244 - Guenard , et al. July 23, 2	2013-07-23
Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same Grant 8,486,771 - Letertre , et al. July 16, 2	2013-07-16
Relaxation of strained layers Grant 8,481,408 - Letertre , et al. July 9, 2	2013-07-09
Substrate for growing a III-V light emitting device Grant 8,334,155 - Krames , et al. December 18, 2	2012-12-18
Substrate for growing a III-V light emitting device Grant 8,288,186 - Krames , et al. October 16, 2	2012-10-16
Relaxation Of Strained Layers App 20120214291 - Letertre; Fabrice ; et al.	2012-08-23
Controlling Pit Formation in a III-Nitride Device App 20120205691 - Yi; Sungsoo ; et al.	2012-08-16
Grown Photonic Crystals in Semiconductor Light Emitting Devices App 20120161187 - Wierer, JR.; Jonathan J. ; et al.	2012-06-28
Controlling pit formation in a III-nitride device Grant 8,183,577 - Yi , et al. May 22, 2	2012-05-22
Grown photonic crystals in semiconductor light emitting devices Grant 8,163,575 - Wierer, Jr. , et al. April 24, 2	2012-04-24
Light emitting device grown on wavelength converting substrate Grant 8,154,052 - Gardner , et al. April 10, 2	2012-04-10
Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate Grant 8,105,852 - Gardner , et al. January 31, 2	2012-01-31
Light Emitting Device Grown On Wavelength Converting Substrate App 20110272720 - GARDNER; Nathan F. ; et al.	2011-11-10
Methods For Relaxation And Transfer Of Strained Layers And Structures Fabricated Thereby App 20110180911 - Guenard; Pascal ; et al.	2011-07-28
Method Of Forming A Composite Substrate And Growing A Iii-v Light Emitting Device Over The Composite Substrate App 20110177631 - Gardner; Nathan F. ; et al.	2011-07-21
Methods for relaxation and transfer of strained layers and structures fabricated thereby Grant 7,981,767 - Guenard , et al. July 19, 2	2011-07-19
III-nitride light emitting devices grown on templates to reduce strain Grant 7,951,693 - Grillot , et al. May 31, 2	2011-05-31
Substrate For Growing A Iii-v Light Emitting Device App 20110027975 - Krames; Michael R. ; et al.	2011-02-03
III-nitride light emitting device with double heterostructure light emitting region Grant 7,880,186 - Gardner , et al. February 1, 2	2011-02-01
A1InGaP LED having reduced temperature dependence Grant 7,863,631 - Krames , et al. January 4, 2	2011-01-04
Controlling Pit Formation In A Iii-nitride Device App 20100327256 - YI; Sungsoo ; et al.	2010-12-30
Semiconductor Light Emitting Device Growing Active Layer On Textured Surface App 20100264454 - YI; Sungsoo ; et al.	2010-10-21
Semiconductor light emitting devices including in-plane light emitting layers Grant 7,808,011 - Kim , et al. October 5, 2	2010-10-05
Semiconductor Light Emitting Devices Including In-plane Light Emitting Layers App 20100226404 - Kim; James C. ; et al.	2010-09-09
Methods Of Forming Relaxed Layers Of Semiconductor Materials, Semiconductor Structures, Devices And Engineered Substrates Including Same App 20100176490 - LETERTRE; Fabrice ; et al.	2010-07-15
III-nitride light emitting device with reduced strain light emitting layer Grant 7,663,148 - Yi , et al. February 16, 2	2010-02-16
Methods For Relaxation And Transfer Of Strained Layers And Structures Fabricated Thereby App 20100032793 - Guenard; Pascal ; et al.	2010-02-11
Iii-nitride Light Emitting Device With Double Heterostructure Light Emmitting Region App 20090261361 - Shen; Yu-Chen ; et al.	2009-10-22
AlInGaP LED HAVING REDUCED TEMPERATURE DEPENDENCE App 20090230381 - KRAMES; Michael R. ; et al.	2009-09-17
III-nitride light emitting devices grown on templates to reduce strain Grant 7,547,908 - Grillot , et al. June 16, 2	2009-06-16
AllnGaP LED having reduced temperature dependence Grant 7,544,525 - Krames , et al. June 9, 2	2009-06-09
III-nitride light emitting devices grown on templates to reduce strain Grant 7,534,638 - Grillot , et al. May 19, 2	2009-05-19
III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain App 20080149961 - Grillot; Patrick N. ; et al.	2008-06-26
III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain App 20080153191 - Grillot; Patrick N. ; et al.	2008-06-26
III-Nitride Light Emitting Device with Reduced Strain Light Emitting Layer App 20080149942 - Yi; Sungsoo ; et al.	2008-06-26
III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain App 20080153192 - Grillot; Patrick N. ; et al.	2008-06-26
Light emitting diodes with graded composition active regions Grant 7,345,324 - Bour , et al. March 18, 2	2008-03-18
A1InGaP LED having reduced temperature dependence Grant 7,244,630 - Krames , et al. July 17, 2	2007-07-17
III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region App 20070145384 - Gardner; Nathan F. ; et al.	2007-06-28
AlInGaP LED Having Reduced Temperature Dependence App 20070131961 - Krames; Michael R. ; et al.	2007-06-14
Reverse polarization light emitting region for a semiconductor light emitting device Grant 7,221,000 - Shen , et al. May 22, 2	2007-05-22
Substrate for growing a III-V light emitting device App 20070072324 - Krames; Michael R. ; et al.	2007-03-29
III-V light emitting device App 20070069225 - Krames; Michael R. ; et al.	2007-03-29
III-nitride light emitting device with double heterostructure light emitting region App 20070045638 - Shen; Yu-Chen ; et al.	2007-03-01
Grown photonic crystals in semiconductor light emitting devices App 20060284187 - Wierer; Jonathan J. JR. ; et al.	2006-12-21
Semiconductor light emitting devices with graded composition light emitting layers Grant 7,122,839 - Shen , et al. October 17, 2	2006-10-17
A1lnGaP LED having reduced temperature dependence App 20060220031 - Krames; Michael R. ; et al.	2006-10-05
Reverse polarization light emitting region for a semiconductor light emitting device App 20060197100 - Shen; Yu-Chen ; et al.	2006-09-07
lll-phosphide light emitting devices with thin active layers Grant 7,087,941 - Gardner , et al. August 8, 2	2006-08-08
Semiconductor light emitting devices with graded compositon light emitting layers App 20060091404 - Shen; Yu-Chen ; et al.	2006-05-04
Heterostructures for III-nitride light emitting devices Grant 6,995,389 - Kim , et al. February 7, 2	2006-02-07
Light emitting diodes with graded composition active regions App 20050263780 - Bour, David P. ; et al.	2005-12-01
Light emitting diodes with graded composition active regions Grant 6,955,933 - Bour , et al. October 18, 2	2005-10-18
Semiconductor light emitting devices including in-plane light emitting layers App 20050205884 - Kim, Jarnes C. ; et al.	2005-09-22
III-nitride light-emitting devices with improved high-current efficiency Grant 6,943,381 - Gardner , et al. September 13, 2	2005-09-13
Iii-nitride Light-emitting Devices With Improved High-current Efficiency App 20050167690 - Gardner, Nathan F. ; et al.	2005-08-04
Semiconductor Light Emitting Devices App 20050023549 - Gardner, Nathan F. ; et al.	2005-02-03
Semiconductor light emitting devices Grant 6,847,057 - Gardner , et al. January 25, 2	2005-01-25
Heterostructures for III-nitride light emitting devices App 20040256611 - Kim, James C. ; et al.	2004-12-23
Light emitting devices including tunnel junctions Grant 6,822,991 - Collins, III , et al. November 23, 2	2004-11-23
Light emitting devices including tunnel junctions App 20040066816 - Collins, William D. III ; et al.	2004-04-08
Indium gallium nitride smoothing structures for III-nitride devices Grant 6,635,904 - Goetz , et al. October 21, 2	2003-10-21
Light emitting diodes with graded composition active regions App 20030020085 - Bour, David P. ; et al.	2003-01-30
Indium gallium nitride smoothing structures for III-nitride devices Grant 6,489,636 - Goetz , et al. December 3, 2	2002-12-03
Indium gallium nitride smoothing structures for III-nitride devices App 20020171092 - Goetz, Werner K. ; et al.	2002-11-21
Indium Gallium Nitride Smoothing Structures For Iii-nitride Devices App 20020171091 - Goetz, Werner K. ; et al.	2002-11-21
AIGaInP light emitting devices with thin active layers App 20020127751 - Gardner, Nathan F. ; et al.	2002-09-12
Algainp Light Emitting Devices With Thin Active Layers App 20010020703 - GARDNER, NATHAN F. ; et al.	2001-09-13
Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices Grant 5,656,538 - Gardner , et al. August 12, 1	1997-08-12

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