loadpatents
name:-0.0044379234313965
name:-0.0053551197052002
name:-0.0013549327850342
Gao; Wen Zhi Patent Filings

Gao; Wen Zhi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Gao; Wen Zhi.The latest application filed is for "double barrier layer sets for contacts in semiconductor device".

Company Profile
1.5.4
  • Gao; Wen Zhi - Rexford NY
  • Gao; Wen Zhi - Singapore SG
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Double barrier layer sets for contacts in semiconductor device
Grant 10,453,747 - Kumar , et al. Oc
2019-10-22
Double Barrier Layer Sets For Contacts In Semiconductor Device
App 20190067098 - Kumar; Aditya ;   et al.
2019-02-28
Multi-layer spacer used in finFET
Grant 9,419,101 - Peng , et al. August 16, 2
2016-08-16
Method of forming shallow trench isolation structures for integrated circuits
Grant 8,178,417 - Mishra , et al. May 15, 2
2012-05-15
Nested and isolated transistors with reduced impedance difference
Grant 8,143,651 - Widodo , et al. March 27, 2
2012-03-27
Nested And Isolated Transistors With Reduced Impedance Difference
App 20100301424 - WIDODO; Johnny ;   et al.
2010-12-02
Nested and isolated transistors with reduced impedance difference
Grant 7,767,577 - Widodo , et al. August 3, 2
2010-08-03
Method Of Forming Shallow Trench Isolation Structures For Integrated Circuits
App 20090261448 - MISHRA; Shailendra ;   et al.
2009-10-22
Nested And Isolated Transistors With Reduced Impedance Difference
App 20090206408 - WIDODO; Johnny ;   et al.
2009-08-20

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