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name:-0.014020919799805
name:-0.013801097869873
name:-0.018292188644409
GAO; Qun Patent Filings

GAO; Qun

Patent Applications and Registrations

Patent applications and USPTO patent grants for GAO; Qun.The latest application filed is for "vacuum rectification tower with satellite-type tower kettle and vacuum rectification method for atmospheric pressure residual oil".

Company Profile
18.12.11
  • GAO; Qun - BEIJING CN
  • GAO; Qun - Suzhou CN
  • Gao; Qun - Clifton Park NY
  • Gao; Qun - Gainesville FL
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Vacuum rectification tower with satellite-type tower kettle and vacuum rectification method for atmospheric pressure residual oil
App 20220305400 - ZHANG; Qikai ;   et al.
2022-09-29
Differential hydrogenation reaction apparatus
Grant 11,420,175 - Zhang , et al. August 23, 2
2022-08-23
"living" Radical Polymerization Method For Vinyl Monomer By Near-infrared Photothermal Conversion
App 20220112316 - ZHANG; Lifen ;   et al.
2022-04-14
Differential Hydrogenation Reaction Apparatus
App 20210154638 - ZHANG; Qikai ;   et al.
2021-05-27
Device with highly active acceptor doping and method of production thereof
Grant 10,886,178 - Lee , et al. January 5, 2
2021-01-05
Fin reveal forming STI regions having convex shape between fins
Grant 10,832,965 - Xu , et al. November 10, 2
2020-11-10
Method of forming gate structure with undercut region and resulting device
Grant 10,727,133 - Gao , et al.
2020-07-28
Fin-type transistors with spacers on the gates
Grant 10,636,894 - Shen , et al.
2020-04-28
Method Of Forming Gate Structure With Undercut Region And Resulting Device
App 20200091005 - Gao; Qun ;   et al.
2020-03-19
Composite sacrificial gate with etch selective layer
Grant 10,593,555 - Gao , et al.
2020-03-17
Device With Highly Active Acceptor Doping And Method Of Production Thereof
App 20200066593 - LEE; Tek Po Rinus ;   et al.
2020-02-27
Methods, apparatus, and system for forming epitaxial formations with reduced risk of merging
Grant 10,529,831 - Gao , et al. J
2020-01-07
Diffused contact extension dopants in a transistor device
Grant 10,453,754 - Peng , et al. Oc
2019-10-22
Gate Skirt Oxidation For Improved Finfet Performance And Method For Producing The Same
App 20190305105 - GAO; Qun ;   et al.
2019-10-03
Composite Sacrificial Gate With Etch Selective Layer
App 20190295852 - GAO; Qun ;   et al.
2019-09-26
Fin-type Transistors With Spacers On The Gates
App 20190280105 - Shen; Yanping ;   et al.
2019-09-12
Fin Reveal Forming Sti Regions Having Convex Shape Between Fins
App 20190214308 - Xu; Yiheng ;   et al.
2019-07-11
Asymmetric formation of epi semiconductor material in source/drain regions of FinFET devices
Grant 10,269,932 - Arya , et al.
2019-04-23
Methods of making FinFET device comprising a piezoelectric liner for generating a surface charge
Grant 10,256,152 - Gao , et al.
2019-04-09
Finfet Device Comprising A Piezoelectric Liner For Generating A Surface Charge And Methods Of Making Such A Device
App 20190027601 - Gao; Qun ;   et al.
2019-01-24
On-chip resistors with a tunable temperature coefficient of resistance
Grant 10,014,364 - Gao , et al. July 3, 2
2018-07-03
Method for analyzing discrete traps in semiconductor devices
Grant 9,691,861 - Kniazev , et al. June 27, 2
2017-06-27
Method for Analyzing Discrete Traps in Semiconductor Devices
App 20150192635 - Kniazev; Andrei ;   et al.
2015-07-09

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