Ganesan; Shanthi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ganesan; Shanthi.The latest application filed is for "methods of forming a p-type group ii-vi semiconductor crystal layer on a substrate".

Company Profile

0.4.6

Ganesan; Shanthi - Smyrna GA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Zinc-oxide-based double-heterostructure light-emitting diode Grant 7,525,128 - Nause , et al. April 28, 2	2009-04-28
Methods Of Forming A P-type Group Ii-vi Semiconductor Crystal Layer On A Substrate App 20070111372 - Nause; Jeffrey E. ; et al.	2007-05-17
Zinc-oxide-based Light-emitting Diode App 20070102723 - Nause; Jeff ; et al.	2007-05-10
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate Grant 7,176,054 - Nause , et al. February 13, 2	2007-02-13
High-electron mobility transistor with zinc oxide Grant 7,105,868 - Nause , et al. September 12, 2	2006-09-12
Zinc-oxide-based light-emitting diode App 20060049425 - Nause; Jeff ; et al.	2006-03-09
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate Grant 6,887,736 - Nause , et al. May 3, 2	2005-05-03
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate App 20050020035 - Nause, Jeffrey E. ; et al.	2005-01-27
High-electron mobility transistor with zinc oxide App 20040056273 - Nause, Jeff ; et al.	2004-03-25
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate App 20040058463 - Nause, Jeffrey E. ; et al.	2004-03-25

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