| Patent | Date |
|---|
Semiconductor device having an electrostatic discharge protection structure
Grant 11,302,781 - Weyers , et al. April 12, 2 | 2022-04-12 |
Radiation-hardened power semiconductor devices and methods of forming them
Grant 10,256,325 - Gamerith , et al. | 2019-04-09 |
Semiconductor Device Having an Electrostatic Discharge Protection Structure
App 20180301537 - Weyers; Joachim ; et al. | 2018-10-18 |
Semiconductor device with superjunction structure and transistor cells in a transition region along a transistor cell region
Grant 9,954,056 - Hirler , et al. April 24, 2 | 2018-04-24 |
Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area
Grant 9,947,741 - Schulze , et al. April 17, 2 | 2018-04-17 |
Semiconductor Device with Field Dielectric in an Edge Area
App 20170373140 - Hirler; Franz ; et al. | 2017-12-28 |
VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body
Grant 9,773,863 - Hirler , et al. September 26, 2 | 2017-09-26 |
Semiconductor Device with Superjunction Structure and Transistor Cells in a Transition Region Along a Transistor Cell Region
App 20170221989 - Hirler; Franz ; et al. | 2017-08-03 |
Field-Effect Semiconductor Device Having Pillar Regions of Different Conductivity Type Arranged in an Active Area
App 20170148872 - Schulze; Hans-Joachim ; et al. | 2017-05-25 |
Super junction semiconductor device having strip structures in a cell area
Grant 9,627,471 - Hirler , et al. April 18, 2 | 2017-04-18 |
Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area
Grant 9,570,607 - Schulze , et al. February 14, 2 | 2017-02-14 |
Super junction semiconductor device having a compensation structure
Grant 9,570,596 - Gamerith , et al. February 14, 2 | 2017-02-14 |
Semiconductor device with charge compensation
Grant 9,537,003 - Weber , et al. January 3, 2 | 2017-01-03 |
Field-Effect Semiconductor Device Having Alternating N-Type and P-Type Pillar Regions Arranged in an Active Area
App 20160064554 - Schulze; Hans-Joachim ; et al. | 2016-03-03 |
Charge compensation semiconductor devices
Grant 9,209,292 - Schulze , et al. December 8, 2 | 2015-12-08 |
Semiconductor Device With Field Dielectric In An Edge Area
App 20150333168 - Hirler; Franz ; et al. | 2015-11-19 |
Super Junction Semiconductor Device having Strip Structures in a Cell Area
App 20150325641 - Hirler; Franz ; et al. | 2015-11-12 |
Charge-compensation semiconductor device
Grant 9,147,763 - Weber , et al. September 29, 2 | 2015-09-29 |
Super junction structure semiconductor device based on a compensation structure including compensation layers and a fill structure
Grant 9,117,694 - Hirler , et al. August 25, 2 | 2015-08-25 |
Method for producing a semiconductor device including a dielectric layer
Grant 9,112,053 - Weber , et al. August 18, 2 | 2015-08-18 |
Super Junction Semiconductor Device having a Compensation Structure
App 20150214348 - Gamerith; Stefan ; et al. | 2015-07-30 |
Semiconductor device with a super junction structure with one, two or more pairs of compensation layers
Grant 9,024,383 - Gamerith , et al. May 5, 2 | 2015-05-05 |
Charge-Compensation Semiconductor Device
App 20150084120 - Weber; Hans ; et al. | 2015-03-26 |
Charge Compensation Semiconductor Devices
App 20150021670 - Schulze; Hans-Joachim ; et al. | 2015-01-22 |
Semiconductor Device with Recombination Centers and Method of Manufacturing
App 20140374882 - Siemieniec; Ralf ; et al. | 2014-12-25 |
Semiconductor Device with Charge Compensation
App 20140346589 - Weber; Hans ; et al. | 2014-11-27 |
Semiconductor Device with a Super Junction Structure with One, Two or More Pairs of Compensation Layers
App 20140327068 - Gamerith; Stefan ; et al. | 2014-11-06 |
Semiconductor Device with a Super Junction Structure with Compensation Layers and a Dielectric Layer
App 20140327104 - Willmeroth; Armin ; et al. | 2014-11-06 |
Super Junction Structure Semiconductor Device Based on a Compensation Structure Including Compensation Layers and a Fill Structure
App 20140327070 - Hirler; Franz ; et al. | 2014-11-06 |
Charge compensation semiconductor device
Grant 8,866,222 - Weber , et al. October 21, 2 | 2014-10-21 |
Semiconductor device with charge compensation structure arrangement for optimized on-state resistance and switching losses
Grant 8,823,084 - Gamerith , et al. September 2, 2 | 2014-09-02 |
Charge Compensation Semiconductor Device
App 20140183621 - Gamerith; Stefan ; et al. | 2014-07-03 |
Radiation-Hardened Power Semiconductor Devices and Methods of Forming Them
App 20140124851 - Gamerith; Stefan ; et al. | 2014-05-08 |
Semiconductor device with self-charging field electrodes
Grant 8,716,788 - Weber , et al. May 6, 2 | 2014-05-06 |
Charge Compensation Semiconductor Device
App 20130234761 - Weber; Hans ; et al. | 2013-09-12 |
Semiconductor Device With Self-charging Field Electrodes
App 20130082322 - Weber; Hans ; et al. | 2013-04-04 |
Method for producing an electrode structure
Grant 8,399,325 - Weber , et al. March 19, 2 | 2013-03-19 |
Method For Producing A Semiconductor Device Including A Dielectric Layer
App 20130005099 - Weber; Hans ; et al. | 2013-01-03 |
Method for producing a gate electrode structure
Grant 8,288,230 - Weber , et al. October 16, 2 | 2012-10-16 |
Method For Producing A Gate Electrode Structure
App 20120083081 - Weber; Hans ; et al. | 2012-04-05 |
Method For Producing An Electrode Structure
App 20120083085 - Weber; Hans ; et al. | 2012-04-05 |
Device Including An Imide Layer With Non-contact Openings And Method
App 20100007028 - Fachmann; Christian ; et al. | 2010-01-14 |
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