Gambin; Vincent

Patent Applications and Registrations

Patent applications and USPTO patent grants for Gambin; Vincent.The latest application filed is for "semiconductor devices using insulator-metal phase change materials and method for fabrication".

Company Profile

5.19.14

Gambin; Vincent - Rancho Palos Verdes CA
Gambin; Vincent - Torrance CA
Gambin; Vincent - Gardena CA US
Gambin; Vincent - Menlo Park CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor devices using insulator-metal phase change materials and method for fabrication Grant 11,018,296 - Gambin , et al. May 25, 2	2021-05-25
Semiconductor devices using insulator-metal phase change materials and method for fabrication Grant 10,811,601 - Gambin , et al. October 20, 2	2020-10-20
Wafer-scale catalytic deposition of black phosphorus Grant 10,727,050 - Gambin , et al.	2020-07-28
Semiconductor Devices Using Insulator-Metal Phase Change Materials and Method for Fabrication App 20200235293 - Gambin; Vincent ; et al.	2020-07-23
Nano-imprinting using high-pressure crystal phase transformations Grant 10,497,564 - Gambin , et al. De	2019-12-03
Vertical cavity surface emitting laser with composite reflectors Grant 9,735,545 - Chen , et al. August 15, 2	2017-08-15
Microfluidic impingement jet cooled embedded diamond GaN HEMT Grant 9,484,284 - Gambin , et al. November 1, 2	2016-11-01
Selective deposition of diamond in thermal vias Grant 9,196,703 - Hobart , et al. November 24, 2	2015-11-24
Selective Deposition Of Diamond In Thermal Vias App 20150056763 - Hobart; Karl D. ; et al.	2015-02-26
AIN buffer N-polar GaN HEMT profile Grant 8,710,511 - Gambin , et al. April 29, 2	2014-04-29
Direct growth of diamond in backside vias for GaN HEMT devices Grant 8,575,657 - Gambin , et al. November 5, 2	2013-11-05
Direct Growth Of Diamond In Backside Vias For Gan Hemt Devices App 20130248879 - Gambin; Vincent ; et al.	2013-09-26
Composite passivation process for nitride FET Grant 8,431,962 - Heying , et al. April 30, 2	2013-04-30
AlN BUFFER N-POLAR GaN HEMT PROFILE App 20130026489 - Gambin; Vincent ; et al.	2013-01-31
Electrical circuit device having carbon nanotube fabrication from crystallography oriented catalyst Grant 7,893,423 - Gambin , et al. February 22, 2	2011-02-22
Carbon nanotube fabrication from crystallography oriented catalyst App 20100127240 - Gambin; Vincent ; et al.	2010-05-27
Carbon nanotube fabrication from crystallography oriented catalyst Grant 7,678,672 - Gambin , et al. March 16, 2	2010-03-16
Carbon Nanotube Fabrication From Crystallography Oriented Catalyst App 20100029063 - Gambin; Vincent ; et al.	2010-02-04
Multiple GaInNAs quantum wells for high power applications Grant 7,645,626 - Ha , et al. January 12, 2	2010-01-12
Method for fabricating a nitride FET including passivation layers Grant 7,632,726 - Heying , et al. December 15, 2	2009-12-15
Composite Passivation Process for Nitride FET App 20090146224 - Heying; Benjamin ; et al.	2009-06-11
Method for Fabricating a Nitride FET Including Passivation Layers App 20090148985 - Heying; Benjamin ; et al.	2009-06-11
Protective layer in device fabrication App 20080199993 - Heying; Benjamin ; et al.	2008-08-21
Method for growth of group III-V semiconductor material on a dielectric Grant 7,084,040 - Gambin , et al. August 1, 2	2006-08-01
Multiple GaInNAs quantum wells for high power applications App 20060039432 - Ha; Wonill ; et al.	2006-02-23
Method for growth of group III-V semiconductor material on a dielectric App 20050239274 - Gambin, Vincent ; et al.	2005-10-27
GaInNAsSb quantum well semiconductor devices Grant 6,798,809 - Gambin , et al. September 28, 2	2004-09-28

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