Gambaro; Daniela

Patent Applications and Registrations

Patent applications and USPTO patent grants for Gambaro; Daniela.The latest application filed is for "production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei".

Company Profile

0.10.8

Gambaro; Daniela - Galliate IT

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei Grant 9,129,919 - Falster , et al. September 8, 2	2015-09-08
Production Of High Precipitate Density Wafers By Activation Of Inactive Oxygen Precipitate Nuclei App 20140141537 - Falster; Robert J. ; et al.	2014-05-22
Process for forming low defect density, ideal oxygen precipitating silicon Grant 7,442,253 - Falster , et al. October 28, 2	2008-10-28
Process For Forming Low Defect Density, Ideal Oxygen Precipitating Silicon App 20070224783 - Falster; Robert J. ; et al.	2007-09-27
Low defect density, ideal oxygen precipitating silicon Grant 7,229,693 - Falster , et al. June 12, 2	2007-06-12
Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates App 20060075960 - Borgini; Marco ; et al.	2006-04-13
Low defect density, ideal oxygen precipitating silicon App 20050170610 - Falster, Robert J. ; et al.	2005-08-04
Process for producing low defect density, ideal oxygen precipitating silicon Grant 6,896,728 - Falster , et al. May 24, 2	2005-05-24
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor Grant 6,849,119 - Falster , et al. February 1, 2	2005-02-01
Process for producing low defect density, ideal oxygen precipitating silicon App 20040025782 - Falster, Robert J. ; et al.	2004-02-12
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor App 20030196586 - Falster, Robert J. ; et al.	2003-10-23
Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereof Grant 6,586,068 - Falster , et al. July 1, 2	2003-07-01
Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates App 20020179006 - Borgini, Marco ; et al.	2002-12-05
Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor App 20020026893 - Falster, Robert ; et al.	2002-03-07
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor Grant 6,204,152 - Falster , et al. March 20, 2	2001-03-20
Low defect density, ideal oxygen precipitating silicon Grant 6,190,631 - Falster , et al. February 20, 2	2001-02-20
Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor Grant 6,180,220 - Falster , et al. January 30, 2	2001-01-30
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor Grant 5,994,761 - Falster , et al. November 30, 1	1999-11-30

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.