Gallagher; William Joseph

Patent Applications and Registrations

Patent applications and USPTO patent grants for Gallagher; William Joseph.The latest application filed is for "sot-mram with shared selector".

Company Profile

0.13.5

Gallagher; William Joseph - Ardsley NY
Gallagher; William Joseph - Hsinchu TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
SOT-MRAM with Shared Selector App 20220208244 - Song; MingYuan ; et al.	2022-06-30
SOT-MRAM with shared selector Grant 11,289,143 - Song , et al. March 29, 2	2022-03-29
Semiconductor Device and Method for Forming the Same App 20210408115 - Lin; Shy-Jay ; et al.	2021-12-30
SOT-MRAM with Shared Selector App 20210134339 - Song; MingYuan ; et al.	2021-05-06
Techniques for operating semiconductor devices Grant 7,506,236 - Gallagher , et al. March 17, 2	2009-03-17
Techniques for operating semiconductor devices App 20050268207 - Gallagher, William Joseph ; et al.	2005-12-01
Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices Grant 6,590,750 - Abraham , et al. July 8, 2	2003-07-08
Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices Grant 6,452,764 - Abraham , et al. September 17, 2	2002-09-17
High current conductors and high field magnets using anisotropic superconductors Grant 6,392,156 - Davidson , et al. May 21, 2	2002-05-21
Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices Grant 6,368,878 - Abraham , et al. April 9, 2	2002-04-09
Limiting Magnetoresistive Electrical Interaction To A Preferred Portion Of A Magnetic Region In Magnetic Devices App 20010040778 - ABRAHAM, DAVID WILLIAM ; et al.	2001-11-15
Small area magnetic tunnel junction devices with low resistance and high magnetoresistance Grant 6,226,160 - Gallagher , et al. May 1, 2	2001-05-01
Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices Grant 6,104,633 - Abraham , et al. August 15, 2	2000-08-15
Magnetic memory devices having multiple magnetic tunnel junctions therein Grant 6,072,718 - Abraham , et al. June 6, 2	2000-06-06
Voltage biasing for magnetic ram with magnetic tunnel memory cells Grant 5,991,193 - Gallagher , et al. November 23, 1	1999-11-23
Magnetic tunnel junction device with antiferromagnetically coupled pinned layer Grant 5,841,692 - Gallagher , et al. November 24, 1	1998-11-24
Magnetic tunnel junctions with controlled magnetic response Grant 5,650,958 - Gallagher , et al. July 22, 1	1997-07-22
Magnetic memory array using magnetic tunnel junction devices in the memory cells Grant 5,640,343 - Gallagher , et al. June 17, 1	1997-06-17

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