loadpatents
name:-0.027585983276367
name:-0.033407926559448
name:-0.00045204162597656
Fusegawa; Izumi Patent Filings

Fusegawa; Izumi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fusegawa; Izumi.The latest application filed is for "method of producing silicon single crystal".

Company Profile
0.31.25
  • Fusegawa; Izumi - Nishigo-mura JP
  • Fusegawa; Izumi - Nishishirakawa-gun N/A JP
  • Fusegawa; Izumi - Nishishirakawa N/A JP
  • Fusegawa; Izumi - Fukushima JP
  • Fusegawa, Izumi - Nishishirakawa-gun Fukushima JP
  • Fusegawa; Izumi - Gunma-ken JP
  • Fusegawa; Izumi - Gunma JP
  • Fusegawa; Izumi - Annaka JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method of producing silicon single crystal
Grant 9,938,634 - Sakurada , et al. April 10, 2
2018-04-10
Epitaxial wafer and manufacturing method thereof
Grant 9,425,345 - Hoshi , et al. August 23, 2
2016-08-23
Quartz glass crucible, method for producing the same, and method for producing silicon single crystal
Grant 9,376,336 - Kimura , et al. June 28, 2
2016-06-28
Silicon wafer and method for producing the same
Grant 9,337,013 - Fusegawa , et al. May 10, 2
2016-05-10
Method Of Producing Silicon Single Crystal
App 20160068992 - SAKURADA; Masahiro ;   et al.
2016-03-10
Epitaxial Wafer And Manufacturing Method Thereof
App 20140374861 - Hoshi; Ryoji ;   et al.
2014-12-25
Silicon Wafer And Method For Producing The Same
App 20140103492 - Fusegawa; Izumi ;   et al.
2014-04-17
Quartz Glass Crucible, Method For Producing The Same, And Method For Producing Silicon Single Crystal
App 20130174777 - Kimura; Akihiro ;   et al.
2013-07-11
Method of manufacturing single crystal
Grant 8,147,611 - Sakurada , et al. April 3, 2
2012-04-03
Method for determining distance between reference member and melt surface, method for controlling location of melt surface using the same, and apparatus for production silicon single crystal
Grant 8,085,985 - Urano , et al. December 27, 2
2011-12-27
Method for producing a silicon single crystal and a silicon single crystal
Grant 7,909,930 - Hoshi , et al. March 22, 2
2011-03-22
Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single Crystal
App 20100139549 - Sakurada; Masahiro ;   et al.
2010-06-10
Method of Manufacturing Single Crystal
App 20100126409 - Sakurada; Masahiro ;   et al.
2010-05-27
Method For Determining Distance Between Reference Member And Melt Surface, Method For Controlling Location Of Melt Surface Using The Same, And Apparatus For Producing Silicon Single Crystal
App 20090232359 - Urano; Masahiko ;   et al.
2009-09-17
Soi wafer and a method for producing the same
Grant 7,407,866 - Sakurada , et al. August 5, 2
2008-08-05
Method for producing a single crystal and silicon single crystal wafer
Grant 7,326,395 - Fusegawa , et al. February 5, 2
2008-02-05
Method for Producing a Silicon Single Crystal and a Silicon Single Crystal
App 20070266930 - Hoshi; Ryoji ;   et al.
2007-11-22
Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal
Grant 7,294,196 - Sakurada , et al. November 13, 2
2007-11-13
Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal
Grant 7,258,744 - Sakurada , et al. August 21, 2
2007-08-21
Method for producing single crystal and single crystal
Grant 7,226,507 - Mitamura , et al. June 5, 2
2007-06-05
Method Of Manufacturing Silicon Single Crystal, Silicon Single Crystal And Silicon Wafer
App 20070101926 - FUSEGAWA; Izumi ;   et al.
2007-05-10
Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer
Grant 7,214,268 - Sakurada , et al. May 8, 2
2007-05-08
Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer
Grant 7,179,330 - Fusegawa , et al. February 20, 2
2007-02-20
SOI wafer and a method for producing an SOI wafer
Grant 7,129,123 - Sakurada , et al. October 31, 2
2006-10-31
Process for producing single crystal and silicon crystal wafer
App 20060236919 - Fusegawa; Izumi ;   et al.
2006-10-26
Method for producing single crystal and single crystal
App 20060174819 - Mitamura; Nobuaki ;   et al.
2006-08-10
Soi wafer and production method therefor
App 20060113594 - Sakurada; Masahiro ;   et al.
2006-06-01
Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafer
App 20060065184 - Sakurada; Masahiro ;   et al.
2006-03-30
Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal
App 20050252441 - Sakurada, Masahiro ;   et al.
2005-11-17
Graphite heater for producing single crystal, single crystal productin system and single crystal productin method
App 20050205004 - Sakurada, Masahiro ;   et al.
2005-09-22
Method for producing silicon single crystal and, silicon single crystal and silicon wafer
App 20050160966 - Fusegawa, Izumi ;   et al.
2005-07-28
Silicon single crystal wafer and method for producing silicon single crystal
Grant 6,913,646 - Sakurada , et al. July 5, 2
2005-07-05
Silicon single crystal wafer and method for manufacturing the same
Grant 6,893,499 - Fusegawa , et al. May 17, 2
2005-05-17
Soi wafer and method for manufacturing soi wafer
App 20050064632 - Sakurada, Masahiro ;   et al.
2005-03-24
Apparatus and method for producing silicon semiconductor single crystal
Grant 6,764,548 - Hoshi , et al. July 20, 2
2004-07-20
Silicon wafer and method for producing silicon single crystal
Grant 6,632,411 - Hoshi , et al. October 14, 2
2003-10-14
Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal
Grant 6,632,280 - Hoshi , et al. October 14, 2
2003-10-14
Silicon single crystal wafer and method for producing silicon single crystal
App 20030116082 - Sakurada, Masahiro ;   et al.
2003-06-26
Silicon single crystal wafer and method for manufacturing the same
App 20030106484 - Fusegawa, Izumi ;   et al.
2003-06-12
Apparatus and method for producing silicon semiconductor single crystal
App 20030089300 - Hoshi, Ryoji ;   et al.
2003-05-15
Apparatas For Growing Jingle Crystal, Method For Producing Jingle Crystal Utilizing The Apparatas And Jingle Crystal
App 20030070605 - Hoshi, Ryoji ;   et al.
2003-04-17
Silicon wafer and method for producing silicon single crystal
App 20020157598 - Hoshi, Ryoji ;   et al.
2002-10-31
Method for preparing silicon single crystal and silicon single crystal
App 20020157600 - Fusegawa, Izumi ;   et al.
2002-10-31
Heat treatment of Si single crystal
Grant 5,834,322 - Fusegawa , et al. November 10, 1
1998-11-10
Method for testing electrical properties of silicon single crystal
Grant 5,534,112 - Fusegawa , et al. July 9, 1
1996-07-09
Method of growing silicon single crystals
Grant 5,501,172 - Murai , et al. March 26, 1
1996-03-26
Apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus
Grant 5,462,010 - Takano , et al. October 31, 1
1995-10-31
Single crystal pulling apparatus
Grant 5,373,805 - Takano , et al. December 20, 1
1994-12-20
Single crystal pulling apparatus
Grant 5,361,721 - Takano , et al. November 8, 1
1994-11-08
Method and apparatus for producing silicon single crystal
Grant 5,248,378 - Oda , et al. September 28, 1
1993-09-28
Method for heat processing of silicon
Grant 5,110,404 - Fusegawa , et al. May 5, 1
1992-05-05
Apparatus for Czochralski single crystal growing
Grant 4,956,153 - Yamagishi , et al. September 11, 1
1990-09-11

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