loadpatents
Patent applications and USPTO patent grants for Fuse; Tsuneaki.The latest application filed is for "semiconductor memory device".
Patent | Date |
---|---|
Semiconductor Memory Device App 20120243325 - Fuse; Tsuneaki | 2012-09-27 |
Reference current generating circuit Grant 8,148,970 - Fuse , et al. April 3, 2 | 2012-04-03 |
Sense-amplifier control circuit and controlling method of sense amplifier Grant 8,067,963 - Imai , et al. November 29, 2 | 2011-11-29 |
Reference Current Generating Circuit App 20110050196 - Fuse; Tsuneaki ;   et al. | 2011-03-03 |
Sense-amplifier Control Circuit And Controlling Method Of Sense Amplifier App 20100090725 - IMAI; Seiro ;   et al. | 2010-04-15 |
Semiconductor device Grant 7,208,779 - Ohta , et al. April 24, 2 | 2007-04-24 |
Semiconductor integrated circuit including CMOS logic gate Grant 6,979,870 - Fuse December 27, 2 | 2005-12-27 |
Semiconductor device App 20050230751 - Ohta, Masako ;   et al. | 2005-10-20 |
Semiconductor integrated circuit App 20040203196 - Fuse, Tsuneaki | 2004-10-14 |
Semiconductor integrated circuit Grant 6,677,797 - Kameyama , et al. January 13, 2 | 2004-01-13 |
Level converter circuit Grant 6,466,054 - Kameyama , et al. October 15, 2 | 2002-10-15 |
Semiconductor integrated circuit App 20020080663 - Kameyama, Atsushi ;   et al. | 2002-06-27 |
Apparatus comprising clock control circuit and device using internal clock signal synchronized to external clock signal Grant 6,393,080 - Kamoshida , et al. May 21, 2 | 2002-05-21 |
Semiconductor integrated circuit Grant 6,392,467 - Oowaki , et al. May 21, 2 | 2002-05-21 |
Clock control circuit Grant 6,388,484 - Kamoshida , et al. May 14, 2 | 2002-05-14 |
Lateral Bipolar Transistor Formed On An Insulating Layer App 20010054746 - YAMADA, TAKASHI ;   et al. | 2001-12-27 |
Semiconductor integrated circuit App 20010052623 - Kameyama, Atsushi ;   et al. | 2001-12-20 |
Level converter circuit App 20010024130 - Kameyama, Atsushi ;   et al. | 2001-09-27 |
Semiconductor integrated circuit device Grant 6,177,811 - Fuse , et al. January 23, 2 | 2001-01-23 |
Semiconductor integrated circuit having suppressed leakage currents Grant 6,087,893 - Oowaki , et al. July 11, 2 | 2000-07-11 |
Integrated circuit with stacked sub-circuits between Vcc and ground so as to conserve power and reduce the voltage across any one transistor Grant 5,867,040 - Fuse , et al. February 2, 1 | 1999-02-02 |
Dynamic semiconductor memory device having high integration density Grant 5,363,325 - Sunouchi , et al. November 8, 1 | 1994-11-08 |
BiCMOS circuitry having a combination CMOS gate and a bipolar transistor Grant 5,077,492 - Fuse , et al. December 31, 1 | 1991-12-31 |
Semiconductor memory using dynamic ram cells Grant 4,943,944 - Sakui , et al. July 24, 1 | 1990-07-24 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.