Fuse; Genshu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fuse; Genshu.The latest application filed is for "manufacturing method of semiconductor device".

Company Profile

0.12.2

Fuse; Genshu - Tokyo N/A JP
Fuse; Genshu - Osaka JP
Fuse; Genshu - Hirakata JP
Fuse; Genshu - Toyonaka JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Manufacturing method of semiconductor device Grant 9,023,720 - Fuse , et al. May 5, 2	2015-05-05
Manufacturing method of semiconductor device Grant 8,163,635 - Sugitani , et al. April 24, 2	2012-04-24
Manufacturing Method Of Semiconductor Device App 20120052664 - FUSE; Genshu ; et al.	2012-03-01
Manufacturing Method Of Semiconductor Device App 20110136329 - SUGITANI; Michiro ; et al.	2011-06-09
Method of fabricating semiconductor device Grant RE37,228 - Fuse , et al. June 12, 2	2001-06-12
Method of manufacturing a solid-state image pickup device Grant 5,466,612 - Fuse , et al. November 14, 1	1995-11-14
Method for fabrication of semiconductor device utilizing ion implantation to eliminate defects Grant 5,270,227 - Kameyama , et al. December 14, 1	1993-12-14
Manufacturing method for LDDFETS using oblique ion implantion technique Grant 5,270,226 - Hori , et al. December 14, 1	1993-12-14
Large angle ion implantation method Grant 5,223,445 - Fuse June 29, 1	1993-06-29
Method of making a trench capacitor dram cell Grant 5,026,658 - Fuse , et al. June 25, 1	1991-06-25
Method of fabricating semiconductor device Grant 4,918,027 - Fuse , et al. April 17, 1	1990-04-17
Method of doping impurities into sidewall of trench by use of plasma source Grant 4,861,729 - Fuse , et al. August 29, 1	1989-08-29
Method of fabricating a multi-layer type semiconductor device including crystal growth by spirally directing energy beam Grant 4,487,635 - Kugimiya , et al. December 11, 1	1984-12-11

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