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Patent applications and USPTO patent grants for FURUYAMA; Tohru.The latest application filed is for "program code conversion apparatus, program code conversion method and recording medium".
Patent | Date |
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Program Code Conversion Apparatus, Program Code Conversion Method And Recording Medium App 20080250231 - TAGAWA; Hiroki ;   et al. | 2008-10-09 |
Dynamic Random Access Memory App 20020048205 - Okamura, Junichi ;   et al. | 2002-04-25 |
Clock synchronous type DRAM with latch Grant 5,754,481 - Yabe , et al. May 19, 1 | 1998-05-19 |
Dynamic random access memory Grant 5,673,229 - Okamura , et al. September 30, 1 | 1997-09-30 |
Semiconductor memory and screening test method thereof Grant 5,532,963 - Kushiyama , et al. July 2, 1 | 1996-07-02 |
Semiconductor memory cell Grant 5,525,820 - Furuyama June 11, 1 | 1996-06-11 |
Bias voltage generation circuit Grant 5,506,540 - Sakurai , et al. April 9, 1 | 1996-04-09 |
Semiconductor memory Grant 5,500,815 - Takase , et al. March 19, 1 | 1996-03-19 |
Semiconductor memory with bypass circuit Grant 5,479,370 - Furuyama , et al. December 26, 1 | 1995-12-26 |
Semiconductor memory device having a memory cell unit including a plurality of transistors connected in series Grant 5,444,652 - Furuyama August 22, 1 | 1995-08-22 |
Semiconductor memory device Grant 5,432,733 - Furuyama July 11, 1 | 1995-07-11 |
Semiconductor device and method of screening the same Grant 5,428,576 - Furuyama June 27, 1 | 1995-06-27 |
Dynamic random access memory Grant 5,383,160 - Furuyama January 17, 1 | 1995-01-17 |
Semiconductor memory and screening test method thereof Grant 5,377,152 - Kushiyama , et al. December 27, 1 | 1994-12-27 |
Semiconductor memory device Grant 5,369,612 - Furuyama November 29, 1 | 1994-11-29 |
Semiconductor memory device Grant 5,317,540 - Furuyama May 31, 1 | 1994-05-31 |
Method for testing semiconductor devices Grant 5,298,433 - Furuyama March 29, 1 | 1994-03-29 |
Method of burning in a semiconductor device Grant 5,294,776 - Furuyama March 15, 1 | 1994-03-15 |
Dynamic random access memory Grant 5,287,312 - Okamura , et al. February 15, 1 | 1994-02-15 |
Static random access memory including stress test circuitry Grant 5,276,647 - Matsui , et al. January 4, 1 | 1994-01-04 |
Semiconductor memory Grant 5,265,057 - Furuyama , et al. November 23, 1 | 1993-11-23 |
Semiconductor memory including circuitry for driving plural word lines in a test mode Grant 5,258,954 - Furuyama November 2, 1 | 1993-11-02 |
MOS dynamic semiconductor memory cell Grant 5,148,393 - Furuyama September 15, 1 | 1992-09-15 |
Semiconductor device having a particular structure allowing for voltage stress test application Grant 5,138,427 - Furuyama August 11, 1 | 1992-08-11 |
Semiconductor device with power supply mode-change controller for reliability testing Grant 5,023,476 - Watanabe , et al. * June 11, 1 | 1991-06-11 |
Dynamic random access memory and method for writing data thereto Grant 5,014,245 - Muroka , et al. May 7, 1 | 1991-05-07 |
Dram with (1/2)VCC precharge and selectively operable limiting circuit Grant 4,967,395 - Watanabe , et al. October 30, 1 | 1990-10-30 |
Semiconductor memory Grant 4,841,483 - Furuyama June 20, 1 | 1989-06-20 |
Semiconductor device with power supply voltage converter circuit Grant 4,833,341 - Watanabe , et al. May 23, 1 | 1989-05-23 |
Dynamic semiconductor memory device Grant 4,733,374 - Furuyama , et al. March 22, 1 | 1988-03-22 |
Dynamic type semiconductor memory device Grant 4,697,252 - Furuyama , et al. September 29, 1 | 1987-09-29 |
Memory test circuit Grant 4,686,456 - Furuyama , et al. August 11, 1 | 1987-08-11 |
Semiconductor dynamic memory device Grant 4,569,036 - Fujii , et al. February 4, 1 | 1986-02-04 |
Semiconductor memory device Grant 4,398,267 - Furuyama August 9, 1 | 1983-08-09 |
Semiconductor memory circuit Grant 4,368,529 - Furuyama January 11, 1 | 1983-01-11 |
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