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Manufacturing method of semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing Grant 7,993,964 - Hirao , et al. August 9, 2 | 2011-08-09 |
Manufacturing method of thin film transistor including low resistance conductive thin films Grant 7,981,734 - Furuta , et al. July 19, 2 | 2011-07-19 |
Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof Grant 7,977,169 - Hirao , et al. July 12, 2 | 2011-07-12 |
Manufacturing Method Of Semiconductor Device Including Active Layer Of Zinc Oxide With Controlled Crystal Lattice Spacing App 20090286351 - HIRAO; Takashi ;   et al. | 2009-11-19 |
Manufacturing Method Of Thin Film Transistor Including Low Resistance Conductive Thin Films App 20090269881 - FURUTA; Mamoru ;   et al. | 2009-10-29 |
Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof Grant 7,598,520 - Hirao , et al. October 6, 2 | 2009-10-06 |
Thin film transistor including low resistance conductive thin films and manufacturing method thereof Grant 7,576,394 - Furuta , et al. August 18, 2 | 2009-08-18 |
Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof App 20070278490 - Hirao; Takashi ;   et al. | 2007-12-06 |
Thin film transistor including low resistance conductive thin films and manufacturing method thereof App 20070187760 - Furuta; Mamoru ;   et al. | 2007-08-16 |
Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof App 20070187678 - Hirao; Takashi ;   et al. | 2007-08-16 |
Two pixel electrodes interposing the signal line extending into without extending beyond the recess on the protection film caused by the contact hole Grant 7,173,681 - Takahashi , et al. February 6, 2 | 2007-02-06 |
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