| Patent | Date |
|---|
Semiconductor laser device and fabrication method thereof
Grant 6,888,867 - Sawaki , et al. May 3, 2 | 2005-05-03 |
Semiconductor device including an InGaAIN layer
Grant 6,635,901 - Sawaki , et al. October 21, 2 | 2003-10-21 |
Semiconductor laser device and fabrication method thereof
App 20030031219 - Sawaki, Nobuhiko ; et al. | 2003-02-13 |
Semiconductor device and fabrication method thereof, and fabrication method of semiconductor substrate
App 20020074561 - Sawaki, Nobuhiko ; et al. | 2002-06-20 |
III-V nitride compound semiconductor device and method for fabricating the same
Grant 5,804,839 - Hanaoka , et al. September 8, 1 | 1998-09-08 |
Dry etching method for a gallium nitride type compound semiconductor
Grant 5,693,180 - Furukawa , et al. December 2, 1 | 1997-12-02 |
Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
Grant 5,433,167 - Furukawa , et al. July 18, 1 | 1995-07-18 |
Light emitting diode
Grant 5,387,804 - Suzuki , et al. February 7, 1 | 1995-02-07 |
Light emitting diode
Grant 5,329,141 - Suzuki , et al. July 12, 1 | 1994-07-12 |
Silicon carbide semiconductor device
Grant 5,319,220 - Suzuki , et al. June 7, 1 | 1994-06-07 |
Method for growing a silicon carbide single crystal
Grant 5,288,365 - Furukawa , et al. February 22, 1 | 1994-02-22 |
Silicon carbide light emitting diode and a method for the same
Grant 5,243,204 - Suzuki , et al. September 7, 1 | 1993-09-07 |
Method for the production of SiC single crystals by using a specific substrate crystal orientation
Grant 5,230,768 - Furukawa , et al. July 27, 1 | 1993-07-27 |
Schottky barrier gate type field effect transistor
Grant 5,229,625 - Suzuki , et al. July 20, 1 | 1993-07-20 |
Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact
Grant 5,216,264 - Fujii , et al. June 1, 1 | 1993-06-01 |
Silicon carbide semiconductor device
Grant 5,184,199 - Fujii , et al. February 2, 1 | 1993-02-02 |
Silicon carbide field-effect transistor with improved breakdown voltage and low leakage current
Grant 5,170,231 - Fujii , et al. December 8, 1 | 1992-12-08 |
Method of manufacturing silicon carbide FETS
Grant 5,135,885 - Furukawa , et al. August 4, 1 | 1992-08-04 |
Silicon carbide semiconductor device with ohmic electrode consisting of alloy
Grant 5,124,779 - Furukawa , et al. June 23, 1 | 1992-06-23 |
Silicon carbide light emitting diode having a pn junction
Grant 5,063,421 - Suzuki , et al. November 5, 1 | 1991-11-05 |
MIS structure photosensor
Grant 5,049,950 - Fujii , et al. September 17, 1 | 1991-09-17 |
Process for producing a single-crystal substrate of silicon carbide
Grant 5,037,502 - Suzuki , et al. August 6, 1 | 1991-08-06 |
Method for producing a silicon carbide semiconductor device
Grant 5,030,580 - Furukawa , et al. July 9, 1 | 1991-07-09 |
Electrode structure for silicon carbide semiconductors
Grant 4,990,994 - Furukawa , et al. February 5, 1 | 1991-02-05 |
Semiconductor device
Grant 4,897,710 - Suzuki , et al. January 30, 1 | 1990-01-30 |
Process for producing a SiC semiconductor device
Grant 4,762,806 - Suzuki , et al. August 9, 1 | 1988-08-09 |
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