| Patent | Date |
|---|
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
Grant 8,349,722 - Owada , et al. January 8, 2 | 2013-01-08 |
Silicon Oxycarbide, Growth Method Of Silicon Oxycarbide Layer, Semiconductor Device And Manufacture Method For Semiconductor Device
App 20120252227 - Owada; Tamotsu ; et al. | 2012-10-04 |
Semiconductor device having multilevel copper wiring layers and its manufacture method
Grant 8,188,602 - Otsuka , et al. May 29, 2 | 2012-05-29 |
Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
Grant 7,642,185 - Owada , et al. January 5, 2 | 2010-01-05 |
Semiconductor device and method for fabricating the same
Grant 7,579,277 - Owada , et al. August 25, 2 | 2009-08-25 |
Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device
Grant 7,541,296 - Owada , et al. June 2, 2 | 2009-06-02 |
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
App 20090093130 - Owada; Tamotsu ; et al. | 2009-04-09 |
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
Grant 7,485,570 - Owada , et al. February 3, 2 | 2009-02-03 |
Semiconductor device and method for fabricating the same
App 20070197032 - Owada; Tamotsu ; et al. | 2007-08-23 |
Semiconductor device using low-K material as interlayer insulating film and its manufacture method
Grant 7,256,118 - Fukuyama , et al. August 14, 2 | 2007-08-14 |
Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
App 20070173054 - Owada; Tamotsu ; et al. | 2007-07-26 |
Low dielectric constant film material, film and semiconductor device using such material
Grant 7,235,866 - Nakata , et al. June 26, 2 | 2007-06-26 |
Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
Grant 7,208,405 - Owada , et al. April 24, 2 | 2007-04-24 |
Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device
App 20060178017 - Owada; Tamotsu ; et al. | 2006-08-10 |
Composition for forming low dielectric constant insulating film, method of forming insulating film using the composition and electronic parts having the insulating film produced thereby
Grant 7,060,909 - Fukuyama June 13, 2 | 2006-06-13 |
Semiconductor device
App 20060087041 - Fukuyama; Shun-ichi ; et al. | 2006-04-27 |
Low dielectric constant film material, film and semiconductor device using such material
App 20060022357 - Nakata; Yoshihiro ; et al. | 2006-02-02 |
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
App 20050287790 - Owada, Tamotsu ; et al. | 2005-12-29 |
Semiconductor device using low-K material as interlayer insulating film and its manufacture method
App 20050250309 - Fukuyama, Shun-ichi ; et al. | 2005-11-10 |
Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
App 20050242440 - Owada, Tamotsu ; et al. | 2005-11-03 |
Low dielectric constant film material, film and semiconductor device using such material
Grant 6,958,525 - Nakata , et al. October 25, 2 | 2005-10-25 |
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
Grant 6,949,830 - Owada , et al. September 27, 2 | 2005-09-27 |
Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layer
Grant 6,943,431 - Fukuyama , et al. September 13, 2 | 2005-09-13 |
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
App 20040155340 - Owada, Tamotsu ; et al. | 2004-08-12 |
Semiconductor device including porous insulating material and manufacturing method therefor
Grant 6,737,744 - Fukuyama May 18, 2 | 2004-05-18 |
Semiconductor device with multilevel wiring layers
Grant 6,707,156 - Suzuki , et al. March 16, 2 | 2004-03-16 |
Method of manufacturing semiconductor device having multilevel wiring
Grant 6,693,046 - Takigawa , et al. February 17, 2 | 2004-02-17 |
Semiconductor device using low-k material as interlayer insulating film and its manufacture method
App 20040021224 - Fukuyama, Shun-ichi ; et al. | 2004-02-05 |
Method Of Manufacturing Semiconductor Device Having Multilevel Wiring
App 20040002208 - Takigawa, Yukio ; et al. | 2004-01-01 |
Semiconductor device having multilevel copper wiring layers and its manufacture method
App 20030227086 - Otsuka, Satoshi ; et al. | 2003-12-11 |
Semiconductor Device With Multilevel Wiring Layers
App 20030214041 - Suzuki, Takashi ; et al. | 2003-11-20 |
Low dielectric constant film material, film and semiconductor device using such material
App 20030207131 - Nakata, Yoshihiro ; et al. | 2003-11-06 |
Low dielectric constant film material, film and semiconductor device using such material
Grant 6,613,834 - Nakata , et al. September 2, 2 | 2003-09-02 |
Semiconductor device including porous insulating material and manufacturing method therefor
App 20030057561 - Fukuyama, Shun-Ichi ; et al. | 2003-03-27 |
Composition for forming low dielectric constant insulating film, method of forming insulating film using the composition and electronic parts having the insulating film produced thereby
App 20030010961 - Fukuyama, Shun-Ichi ; et al. | 2003-01-16 |
Semiconductor Device And Method Of Manufacturing The Same
App 20020038910 - INOUE, TOSHIKAZU ; et al. | 2002-04-04 |
Low dielectric constant film material, film and semiconductor device using such material
App 20010033026 - Nakata, Yoshihiro ; et al. | 2001-10-25 |
Process for forming silicon dioxide film
Grant 5,976,618 - Fukuyama , et al. November 2, 1 | 1999-11-02 |
Semiconductor integrated circuit device employing interlayer insulating film with low dielectric constant
Grant 5,949,130 - Fukuyama , et al. September 7, 1 | 1999-09-07 |
Process for forming silicon dioxide film
Grant 5,770,260 - Fukuyama , et al. June 23, 1 | 1998-06-23 |
Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof
Grant 5,484,687 - Watanabe , et al. January 16, 1 | 1996-01-16 |
Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof
Grant 5,240,813 - Watanabe , et al. August 31, 1 | 1993-08-31 |
Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
Grant 4,988,514 - Fukuyama , et al. * January 29, 1 | 1991-01-29 |
Pattern-forming material and its production and use
Grant 4,863,833 - Fukuyama , et al. September 5, 1 | 1989-09-05 |
Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
Grant 4,670,299 - Fukuyama , et al. June 2, 1 | 1987-06-02 |
Use of polysilsesquioxane without hydroxyl group for forming mask
Grant 4,657,843 - Fukuyama , et al. April 14, 1 | 1987-04-14 |
| 