| Patent | Date |
|---|
Portable terminal and control program for portable terminal
Grant 9,285,975 - Fukunaga March 15, 2 | 2016-03-15 |
Earphone microphone-mountable electronic appliance
Grant 8,718,722 - Fukunaga May 6, 2 | 2014-05-06 |
Structural unit, endoscope, and adhering method
Grant 8,708,893 - Ozaki , et al. April 29, 2 | 2014-04-29 |
Photoelectric Conversion Device
App 20130233382 - KOBAYASHI; Hiroyuki ; et al. | 2013-09-12 |
Portable Terminal And Control Program For Portable Terminal
App 20130191777 - Fukunaga; Toshiaki | 2013-07-25 |
Photoelectric conversion device and solar cell using the photoelectric conversion device
Grant 8,415,557 - Fukunaga , et al. April 9, 2 | 2013-04-09 |
Photoelectric Conversion Element, Thin-film Solar Cell, And Photoelectric Conversion Element Manufacturing Method
App 20110186103 - KOBAYASHI; Hiroyuki ; et al. | 2011-08-04 |
Photoelectric Conversion Element, Thin-film Solar Cell, And Photoelectric Conversion Element Manufacturing Method
App 20110186102 - KOBAYASHI; Hiroyuki ; et al. | 2011-08-04 |
Substrate For Selenium Compound Semiconductors, Production Method Of Substrate For Selenium Compound Semiconductors, And Thin-film Solar Cell
App 20110186131 - MUKAI; Atsushi ; et al. | 2011-08-04 |
Photoelectric Conversion Device And Solar Cell, And Process For Producing The Photoelectric Conversion Device
App 20100236606 - Kobayashi; Hiroyuki ; et al. | 2010-09-23 |
Structural Unit, Endoscope, And Adhering Method
App 20100228088 - OZAKI; Takao ; et al. | 2010-09-09 |
Photoelectric Conversion Device And Solar Cell Using The Photoelectric Conversion Device
App 20100224249 - Fukunaga; Toshiaki ; et al. | 2010-09-09 |
Solid-state imaging device that efficiently guides light to a light-receiving part
Grant 7,768,088 - Fukunaga August 3, 2 | 2010-08-03 |
Liquid ejection head
Grant 7,735,750 - Kaneko , et al. June 15, 2 | 2010-06-15 |
Endoscope Soft Portion And Endoscope
App 20100145151 - Fukunaga; Toshiaki ; et al. | 2010-06-10 |
Endoscope Flexible Portion And Endoscope
App 20100145150 - FUKUNAGA; Toshiaki | 2010-06-10 |
Endoscope And Flexible Tube Thereof
App 20100113879 - Fukunaga; Toshiaki | 2010-05-06 |
Endoscope Flexible Section And Endoscope
App 20100076265 - YAMAKAWA; Shinichi ; et al. | 2010-03-25 |
Earphone Microphone-Mountable Electronic Appliance
App 20090227298 - Fukunaga; Toshiaki | 2009-09-10 |
Color sensor and color image pickup method
Grant 7,586,528 - Fukunaga , et al. September 8, 2 | 2009-09-08 |
Color light receiving device and image pickup device
Grant 7,582,943 - Fukunaga , et al. September 1, 2 | 2009-09-01 |
Color light receiving device and image pickup device
Grant 7,579,665 - Yokoyama , et al. August 25, 2 | 2009-08-25 |
Photoelectric converting film stack type solid-state image pickup device
Grant 7,476,904 - Fukunaga January 13, 2 | 2009-01-13 |
Evaporation Device For Evaporating Vapor Deposition Materials
App 20080196667 - FUKUNAGA; Toshiaki | 2008-08-21 |
Photoelectric converting film stack type solid-state image pickup device
App 20080135828 - Fukunaga; Toshiaki | 2008-06-12 |
Liquid ejection head and method of producing the same
Grant 7,296,879 - Fukunaga , et al. November 20, 2 | 2007-11-20 |
Liquid Ejection Head And Method Of Producing The Same
App 20070146434 - FUKUNAGA; Toshiaki ; et al. | 2007-06-28 |
Liquid ejection head and method of producing the same
Grant 7,205,097 - Fukunaga , et al. April 17, 2 | 2007-04-17 |
Repellency increasing structure and method of producing the same, liquid ejection head and method of producing the same, and stain-resistant film
App 20060115598 - Kaneko; Yasuhisa ; et al. | 2006-06-01 |
Solid-state imaging device
App 20060076636 - Fukunaga; Toshiaki | 2006-04-13 |
Solid-state image pickup device
App 20060042677 - Fukunaga; Toshiaki ; et al. | 2006-03-02 |
Semiconductor laser element and semiconductor laser
Grant 6,999,486 - Kuniyasu , et al. February 14, 2 | 2006-02-14 |
Color light receiving device and image pickup device
App 20060023094 - Yokoyama; Daisuke ; et al. | 2006-02-02 |
Color light receiving device and image pickup device
App 20050270406 - Fukunaga, Toshiaki ; et al. | 2005-12-08 |
Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer
Grant 6,973,109 - Fukunaga , et al. December 6, 2 | 2005-12-06 |
Color sensor and color image pickup method
App 20050206759 - Fukunaga, Toshiaki ; et al. | 2005-09-22 |
Photoelectric converting film stack type solid-state image pickup device
App 20050205879 - Fukunaga, Toshiaki | 2005-09-22 |
Solid-state imaging device
App 20050206755 - Yokoyama, Daisuke ; et al. | 2005-09-22 |
Liquid ejection head and method of producing the same
App 20050185020 - Fukunaga, Toshiaki ; et al. | 2005-08-25 |
Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
App 20050164420 - Kuniyasu, Toshiaki ; et al. | 2005-07-28 |
Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection
Grant 6,901,100 - Mukaiyama , et al. May 31, 2 | 2005-05-31 |
Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element
App 20050100074 - Okazaki, Yoji ; et al. | 2005-05-12 |
Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
Grant 6,888,866 - Kuniyasu , et al. May 3, 2 | 2005-05-03 |
Semiconductor laser and method of manufacturing the same
Grant 6,876,688 - Hayakawa , et al. April 5, 2 | 2005-04-05 |
Semiconductor laser element including optical waveguide layers which have gradually varying bandgaps so as to reduce electrical resistance at interfaces
Grant 6,873,637 - Akinaga , et al. March 29, 2 | 2005-03-29 |
Semiconductor Laser Element Including Optical Waveguide Layers Which Have Gradually Varying Bandgaps So As To Reduce Electrical Resistance At Interfaces
App 20050047463 - Akinaga, Fujio ; et al. | 2005-03-03 |
Semiconductor laser device
Grant 6,856,636 - Ohgoh , et al. February 15, 2 | 2005-02-15 |
Liquid ejection head and method of producing the same
App 20050024439 - Fukunaga, Toshiaki ; et al. | 2005-02-03 |
Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element
Grant 6,822,988 - Okazaki , et al. November 23, 2 | 2004-11-23 |
InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer
Grant 6,816,524 - Fukunaga November 9, 2 | 2004-11-09 |
Pattern forming method and pattern forming device
App 20040219771 - Fukunaga, Toshiaki ; et al. | 2004-11-04 |
GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits
Grant 6,797,416 - Wada , et al. September 28, 2 | 2004-09-28 |
Semiconductor laser element
Grant 6,795,469 - Fukunaga September 21, 2 | 2004-09-21 |
Semiconductor laser element and semiconductor laser
App 20040165626 - Kuniyasu, Toshiaki ; et al. | 2004-08-26 |
Fundamental-transverse-mode index-guided semiconductor laser device having upper optical waveguide layer thinner than lower optical waveguide layer
Grant 6,778,573 - Hayakawa , et al. August 17, 2 | 2004-08-17 |
Pattern forming method and pattern forming device
Grant 6,774,021 - Fukunaga , et al. August 10, 2 | 2004-08-10 |
Semiconductor laser device
Grant 6,744,797 - Kuniyasu , et al. June 1, 2 | 2004-06-01 |
Semiconductor laser element and semiconductor laser
Grant 6,738,403 - Kuniyasu , et al. May 18, 2 | 2004-05-18 |
Substrate including wide low-defect region for use in semiconductor element
Grant 6,709,513 - Fukunaga , et al. March 23, 2 | 2004-03-23 |
Semiconductor laser apparatus
Grant 6,693,941 - Okazaki , et al. February 17, 2 | 2004-02-17 |
Semiconductor laser device including arrow structure precisely formed to suppress P-As interdiffusion and Al oxidation
Grant 6,690,698 - Fukunaga February 10, 2 | 2004-02-10 |
Semiconductor laser device including ARROW structure formed without P-As interdiffusion and Al oxidation
Grant 6,668,002 - Fukunaga December 23, 2 | 2003-12-23 |
Pattern forming method and pattern forming device
App 20030228743 - Fukunaga, Toshiaki ; et al. | 2003-12-11 |
Semiconductor laser element having great bandgap difference between active layer and optical waveguide layers, and including arrow structure formed without P-As interdiffusion
Grant 6,661,821 - Fukunaga December 9, 2 | 2003-12-09 |
Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited
Grant 6,643,306 - Fukunaga November 4, 2 | 2003-11-04 |
GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits
App 20030180580 - Wada, Mitsugu ; et al. | 2003-09-25 |
Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers
Grant 6,625,190 - Hayakawa , et al. September 23, 2 | 2003-09-23 |
Semiconductor laser device which includes AlGaAs optical waveguide layer being formed over internal stripe groove and having controlled refractive index
Grant 6,621,845 - Fukunaga September 16, 2 | 2003-09-16 |
High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode
Grant 6,600,770 - Fukunaga , et al. July 29, 2 | 2003-07-29 |
Semiconductor laser device including arrow structure precisely formed to suppress P-As interdiffusion and Al oxidation
App 20030128731 - Fukunaga, Toshiaki | 2003-07-10 |
Semiconductor laser element
App 20030091082 - Fukunaga, Toshiaki | 2003-05-15 |
Semiconductor laser element having great bandgap difference between active layer and optical waveguide layers, and including arrow structure formed without P-As interdiffusion
App 20030063644 - Fukunaga, Toshiaki | 2003-04-03 |
GaN substrate formed over GaN layer having discretely formed minute holes produced by use of discretely arranged growth suppression mask elements
App 20030047746 - Kuniyasu, Toshiaki ; et al. | 2003-03-13 |
InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer
App 20030043873 - Fukunaga, Toshiaki | 2003-03-06 |
Semiconductor laser device
App 20030039289 - Ohgoh, Tsuyoshi ; et al. | 2003-02-27 |
High-power semiconductor laser device having current confinement structure and index-guided structure, and oscillating in transverse mode
Grant 6,516,016 - Fukunaga , et al. February 4, 2 | 2003-02-04 |
Substrate including wide low-defect region for use in semiconductor element
App 20030006211 - Fukunaga, Toshiaki ; et al. | 2003-01-09 |
Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection
App 20030007532 - Mukaiyama, Akihiro ; et al. | 2003-01-09 |
Semiconductor laser device including ARROW structure formed without P-As interdiffusion and Al oxidation
App 20020172246 - Fukunaga, Toshiaki | 2002-11-21 |
Semiconductor laser device
App 20020146051 - Kuniyasu, Toshiaki ; et al. | 2002-10-10 |
High-power semiconductor laser device having current confinement structure and index-guided structure and oscillating in transverse mode
Grant 6,452,954 - Fukunaga September 17, 2 | 2002-09-17 |
Semiconductor laser device having inGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers, and InGaP optical waveguide layers
App 20020122447 - Fukunaga, Toshiaki ; et al. | 2002-09-05 |
Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
App 20020061044 - Kuniyasu, Toshiaki ; et al. | 2002-05-23 |
Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited
App 20020051476 - Fukunaga, Toshiaki | 2002-05-02 |
InGaAsP semiconductor laser device in which near-edge portions are filled with non-absorbent layer, and lower optical waveguide layer includes InGaP intermediate layer
App 20020051477 - Fukunaga, Toshiaki | 2002-05-02 |
Semiconductor laser device which includes AlGaAs optical waveguide layer being formed over internal stripe groove and having controlled refractive index
App 20020044584 - Fukunaga, Toshiaki | 2002-04-18 |
Semiconductor laser element and semiconductor laser
App 20020018499 - Kuniyasu, Toshiaki ; et al. | 2002-02-14 |
High-power semiconductor laser device in which near-edge portions of active layer are removed
App 20020015428 - Fukunaga, Toshiaki | 2002-02-07 |
Method of fabricating a diffraction grating
Grant 6,344,367 - Naya , et al. February 5, 2 | 2002-02-05 |
High-power semiconductor laser device including resistance reduction layer which has intermediate energy gap
App 20010043630 - Akinaga, Fujio ; et al. | 2001-11-22 |
High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode
App 20010033591 - Fukunaga, Toshiaki ; et al. | 2001-10-25 |
Semiconductor laser element
App 20010028668 - Fukunaga, Toshiaki ; et al. | 2001-10-11 |
Fundamental-transverse-mode index-guided semiconductor laser device having upper optical waveguide layer thicker than lower optical waveguide layer
App 20010021212 - Hayakawa, Toshiro ; et al. | 2001-09-13 |
High-power semiconductor laser device in which near-edge portions of active layer are removed
App 20010017871 - Fukunaga, Toshiaki | 2001-08-30 |
Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer
App 20010017875 - Fukunaga, Toshiaki ; et al. | 2001-08-30 |
High-power semiconductor laser device having current confinement structure and index-guides structure and oscillating in transverse mode
App 20010012308 - Fukunaga, Toshiaki | 2001-08-09 |
Semiconductor laser device
Grant 6,127,691 - Fukunaga , et al. October 3, 2 | 2000-10-03 |
Semiconductor laser
Grant 6,028,874 - Wada , et al. February 22, 2 | 2000-02-22 |
Short wavelength laser
Grant 6,014,388 - Fukunaga January 11, 2 | 2000-01-11 |
Semiconductor laser
Grant 5,995,528 - Fukunaga , et al. November 30, 1 | 1999-11-30 |
Semiconductor laser
Grant 5,617,437 - Fukunaga April 1, 1 | 1997-04-01 |
Semiconductor laser
Grant 5,602,866 - Fukunaga February 11, 1 | 1997-02-11 |
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