Fukasawa; Yoshiharu
Patent Applications and Registrations
Patent applications and USPTO patent grants for Fukasawa; Yoshiharu.The latest application filed is for "refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device".
- Fukasawa; Yoshiharu - Yokohama JP
- Fukasawa, Yoshiharu - Yokohama-Shi JP
- Fukasawa; Yoshiharu - Tokyo JP
| Patent | Date |
|---|---|
| Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film Grant 7,153,589 - Kohsaka , et al. December 26, 2 | 2006-12-26 |
| Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device App 20010037938 - Sato, Michio ; et al. | 2001-11-08 |
| Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film Grant 5,913,100 - Kohsaka , et al. June 15, 1 | 1999-06-15 |
| Sputtering target Grant 4,966,676 - Fukasawa , et al. October 30, 1 | 1990-10-30 |
| Sputtering alloy target and method of producing an alloy film Grant 4,963,240 - Fukasawa , et al. October 16, 1 | 1990-10-16 |
| Sputtering target Grant 4,842,706 - Fukasawa , et al. June 27, 1 | 1989-06-27 |
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