loadpatents
name:-0.0085539817810059
name:-0.012387990951538
name:-0.0036280155181885
Fujiwara; Nobuo Patent Filings

Fujiwara; Nobuo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fujiwara; Nobuo.The latest application filed is for "semiconductor device".

Company Profile
3.12.7
  • Fujiwara; Nobuo - Tokyo JP
  • Fujiwara; Nobuo - Chiyoda-ku JP
  • FUJIWARA; Nobuo - Kawanishi JP
  • Fujiwara; Nobuo - Yokohama-shi JP
  • Fujiwara; Nobuo - Hyogo JP
  • Fujiwara; Nobuo - Itami JP
  • Fujiwara; Nobuo - Yokohama JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor device including an active region that includes a switchable current path
Grant 11,189,689 - Furuhashi , et al. November 30, 2
2021-11-30
Semiconductor Device
App 20200235203 - FURUHASHI; Masayuki ;   et al.
2020-07-23
Thermoelectric converter and manufacturing method for manufacturing thermoelectric converter
Grant 10,497,850 - Yamashita , et al. De
2019-12-03
Semiconductor device having a gate trench and an outside trench
Grant 10,453,951 - Fukui , et al. Oc
2019-10-22
Semiconductor Device
App 20170301788 - FUKUI; Yutaka ;   et al.
2017-10-19
Silicon carbide semiconductor device and manufacturing method therefor
Grant 9,773,874 - Fujiwara , et al. September 26, 2
2017-09-26
Thermoelectric Converter And Manufacturing Method For Manufacturing Thermoelectric Converter
App 20170040522 - YAMASHITA; Akira ;   et al.
2017-02-09
Silicon Carbide Semiconductor Device And Manufacturing Method Therefor
App 20150287789 - Fujiwara; Nobuo ;   et al.
2015-10-08
Semiconductor Manufacturing System And Method
App 20090299512 - TANAKA; Junichi ;   et al.
2009-12-03
Volume controller
App 20060245603 - Suzuki; Nobuyuki ;   et al.
2006-11-02
Semiconductor device having a layered wiring structure with hard mask covering
Grant 6,822,334 - Hori , et al. November 23, 2
2004-11-23
Semiconductor device having a layered wiring structure
App 20020014695 - Hori, Katsunobu ;   et al.
2002-02-07
Plasma reaction apparatus
Grant 5,695,597 - Fujiwara December 9, 1
1997-12-09
Semiconductor device with high dielectric capacitor having sidewall spacers
Grant 5,442,213 - Okudaira , et al. August 15, 1
1995-08-15
Method of plasma etching
Grant 5,435,886 - Fujiwara , et al. July 25, 1
1995-07-25
ECR plasma reaction apparatus having uniform magnetic field gradient
Grant 5,292,395 - Fujiwara March 8, 1
1994-03-08
Semiconductor wafer treating device utilizing a plasma
Grant 4,982,138 - Fujiwara , et al. January 1, 1
1991-01-01
Semiconductor wafer treating apparatus utilizing a plasma
Grant 4,877,509 - Ogawa , et al. October 31, 1
1989-10-31
Audio amplifier
Grant 4,873,493 - Fujiwara October 10, 1
1989-10-10

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