loadpatents
name:-0.065407991409302
name:-0.027318000793457
name:-0.0061218738555908
FUJITO; Kenji Patent Filings

FUJITO; Kenji

Patent Applications and Registrations

Patent applications and USPTO patent grants for FUJITO; Kenji.The latest application filed is for "self-standing gan substrate, gan crystal, method for producing gan single crystal, and method for producing semiconductor device".

Company Profile
4.21.21
  • FUJITO; Kenji - Ushiku-shi JP
  • Fujito; Kenji - Ushiku JP
  • Fujito; Kenji - Ibaraki JP
  • Fujito; Kenji - Ushiki JP
  • FUJITO; Kenji - Ushiki-shi JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
App 20210273058 - NAGAO; Satoru ;   et al.
2021-09-02
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
Grant 11,038,024 - Nagao , et al. June 15, 2
2021-06-15
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
Grant 11,031,475 - Nagao , et al. June 8, 2
2021-06-08
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
Grant 10,655,244 - Tsukada , et al.
2020-05-19
Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
Grant 10,570,530 - Enatsu , et al. Feb
2020-02-25
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
App 20200013860 - NAGAO; Satoru ;   et al.
2020-01-09
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
Grant 10,475,887 - Nagao , et al. Nov
2019-11-12
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
App 20190312111 - NAGAO; Satoru ;   et al.
2019-10-10
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODUCING GaN CRYSTAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
App 20180334758 - TSUKADA; Yusuke ;   et al.
2018-11-22
Periodic Table Group 13 Metal Nitride Crystals And Method For Manufacturing Periodic Table Group 13 Metal Nitride Crystals
App 20180258552 - ENATSU; Yuuki ;   et al.
2018-09-13
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
Grant 10,066,319 - Tsukada , et al. September 4, 2
2018-09-04
Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
Grant 10,023,976 - Enatsu , et al. July 17, 2
2018-07-17
Periodic Table Group 13 Metal Nitride Crystals And Method For Manufacturing Periodic Table Group 13 Metal Nitride Crystals
App 20180057960 - ENATSU; Yuuki ;   et al.
2018-03-01
Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
Grant 9,840,791 - Enatsu , et al. December 12, 2
2017-12-12
Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
Grant 9,551,088 - Fujito , et al. January 24, 2
2017-01-24
Group III nitride crystal production method and group III nitride crystal
Grant 9,502,241 - Matsumoto , et al. November 22, 2
2016-11-22
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODUCING GaN CRYSTAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
App 20160319460 - TSUKADA; Yusuke ;   et al.
2016-11-03
Process for producing a group-III nitride crystal and process for producing a light-emitting semiconductor element or a semiconductor device comprising a group-III nitride crystal
Grant 9,428,386 - Fujito , et al. August 30, 2
2016-08-30
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
App 20160233306 - NAGAO; Satoru ;   et al.
2016-08-11
Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting device
Grant 9,112,096 - Fujito , et al. August 18, 2
2015-08-18
Periodic Table Group 13 Metal Nitride Crystals And Method For Manufacturing Periodic Table Group 13 Metal Nitride Crystals
App 20150093318 - ENATSU; Yuuki ;   et al.
2015-04-02
Single-crystal Substrate, Group-iii Nitride Crystal Obtained Using The Same, And Process For Producing Group-iii Nitride Crystal
App 20140209012 - FUJITO; Kenji ;   et al.
2014-07-31
Method For Growing Group Iii-nitride Crystals In Supercritical Ammonia Using An Autoclave
App 20140190403 - Fujito; Kenji ;   et al.
2014-07-10
Single-crystal substrate, group-III nitride crystal obtained using the same, and process for producing group-III nitride crystal
Grant 8,728,622 - Fujito , et al. May 20, 2
2014-05-20
Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
Grant 8,709,371 - Fujito , et al. April 29, 2
2014-04-29
Group Iii Nitride Crystal Production Method And Group Iii Nitride Crystal
App 20140035103 - MATSUMOTO; Hajime ;   et al.
2014-02-06
Method For Producing Group-iii Nitride Semiconductor Crystal, Group-iii Nitride Semiconductor Substrate, And Semiconductor Light Emitting Device
App 20130320394 - Fujito; Kenji ;   et al.
2013-12-05
Nitride semiconductor crystal and its production method
Grant 8,545,626 - Fujito , et al. October 1, 2
2013-10-01
Method For Producing Group-iii Nitride Semiconductor Crystal, Group-iii Nitride Semiconductor Substrate, And Semiconductor Light Emitting Device
App 20120305983 - Fujito; Kenji ;   et al.
2012-12-06
Single-crystal Substrate, Group-iii Nitride Crystal Obtained Using The Same, And Process For Producing Group-iii Nitride Crystal
App 20120282443 - FUJITO; Kenji ;   et al.
2012-11-08
Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device
Grant 8,269,251 - Fujito , et al. September 18, 2
2012-09-18
Nitride Semiconductor Crystal And Production Process Thereof
App 20120112320 - KUBO; Shuichi ;   et al.
2012-05-10
Group III nitride semiconductor substrate and method for cleaning the same
Grant 8,022,413 - Fujito , et al. September 20, 2
2011-09-20
Group Iii Nitride Semiconductor Substrate And Method For Cleaning The Same
App 20110180904 - FUJITO; Kenji ;   et al.
2011-07-28
Nitride Semiconductor Crystal And Its Production Method
App 20110129669 - Fujito; Kenji ;   et al.
2011-06-02
Group III nitride semiconductor substrate and method for cleaning the same
Grant 7,928,446 - Fujito , et al. April 19, 2
2011-04-19
Group Iii Nitride Semiconductor Substrate And Method For Cleaning The Same
App 20100200865 - Fujito; Kenji ;   et al.
2010-08-12
Method for Growing Group III-Nitride Crystals in Supercritical Ammonia Using an Autoclave
App 20100158785 - Fujito; Kenji
2010-06-24
Method For Producing Group Iii Nitride Semiconductor Crystal, Group Iii Nitride Semiconductor Substrate, And Semiconductor Light- Emitting Device
App 20100148212 - Fujito; Kenji ;   et al.
2010-06-17

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