Fujishima; Naoto

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fujishima; Naoto.The latest application filed is for "semiconductor device manufacturing method".

Company Profile

1.46.31

Fujishima; Naoto - Matsumoto JP
FUJISHIMA; Naoto - Matsumoto City JP
Fujishima; Naoto - Nagano JP
Fujishima; Naoto - Tokyo JP
Fujishima, Naoto - Toronto CA
Fujishima; Naoto - North York Ontario CA
Fujishima; Naoto - Kawasaki JP
Fujishima; Naoto - Kanagawa JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device manufacturing method Grant 9,892,919 - Nakazawa , et al. February 13, 2	2018-02-13
Semiconductor Device Manufacturing Method App 20150214053 - NAKAZAWA; Haruo ; et al.	2015-07-30
Semiconductor device, battery protection circuit and battery pack Grant 8,378,418 - Kitamura , et al. February 19, 2	2013-02-19
Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same Grant 8,084,812 - Kitamura , et al. December 27, 2	2011-12-27
Bidirectional semiconductor device and a manufacturing method thereof Grant 7,902,596 - Kitamura , et al. March 8, 2	2011-03-08
Semiconductor device, battery protection circuit and battery pack App 20100330398 - Kitamura; Mutsumi ; et al.	2010-12-30
Semiconductor device, battery protection circuit and battery pack Grant 7,800,167 - Kitamura , et al. September 21, 2	2010-09-21
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same Grant 7,687,385 - Matsuzaki , et al. March 30, 2	2010-03-30
Bidirectional Semiconductor Device, Method Of Fabricating The Same, And Semiconductor Device Incorporating The Same App 20100044749 - KITAMURA; Mutsumi ; et al.	2010-02-25
SOI lateral semiconductor device and method of manufacturing the same Grant 7,476,942 - Watanabe , et al. January 13, 2	2009-01-13
Semiconductor device with integrated trench lateral power MOSFETs and planar devices App 20080303087 - Sugi; Akio ; et al.	2008-12-11
Method of manufacturing a semiconductor integrated circuit device Grant 7,445,983 - Fujishima , et al. November 4, 2	2008-11-04
Method of manufacturing a semiconductor integrated circuit device Grant 7,445,982 - Fujishima , et al. November 4, 2	2008-11-04
Semiconductor Device And Manufacturing Method Thereof App 20080135927 - YAMAJI; Masaharu ; et al.	2008-06-12
Semiconductor device with integrated trench lateral power MOSFETs and planar devices Grant 7,365,392 - Sugi , et al. April 29, 2	2008-04-29
Method of manufacturing a semiconductor integrated circuit device Grant 7,344,935 - Fujishima , et al. March 18, 2	2008-03-18
Method of manufacturing a semiconductor integrated circuit device App 20070298562 - Fujishima; Naoto ; et al.	2007-12-27
Method of manufacturing a semiconductor integrated circuit device App 20070298563 - Fujishima; Naoto ; et al.	2007-12-27
Semiconductor device, battery protection circuit and battery pack App 20070274110 - Kitamura; Mutsumi ; et al.	2007-11-29
Soi Lateral Semiconductor Device And Method Of Manufacturing The Same App 20070235804 - Watanabe; Yasumasa ; et al.	2007-10-11
Trench lateral power MOSFET and a method of manufacturing the same Grant 7,256,086 - Tabuchi , et al. August 14, 2	2007-08-14
Semiconductor Device Exhibiting A High Breakdown Voltage And The Method Of Manufacturing The Same App 20070155144 - Matsuzaki; Kazuo ; et al.	2007-07-05
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same Grant 7,195,980 - Matsuzaki , et al. March 27, 2	2007-03-27
Manufacturing method of a semiconductor device Grant 7,144,781 - Yamaji , et al. December 5, 2	2006-12-05
Semiconductor device Grant 7,109,551 - Sugi , et al. September 19, 2	2006-09-19
Semiconductor device and a method for manufacturing same Grant 7,056,793 - Fujishima June 6, 2	2006-06-06
Trench lateral power mosfet and a method of manufacturing the same App 20060110875 - Tabuchi; Katsuya ; et al.	2006-05-25
Semiconductor device and method of manufacturing the device Grant 7,034,377 - Sugi , et al. April 25, 2	2006-04-25
Trench lateral power MOSFET and a method of manufacturing the same Grant 7,012,301 - Tabuchi , et al. March 14, 2	2006-03-14
Trench-type MOSFET having a reduced device pitch and on-resistance Grant 7,005,352 - Fujishima , et al. February 28, 2	2006-02-28
Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same App 20050179081 - Kitamura, Mutsumi ; et al.	2005-08-18
Method of manufacturing a semiconductor integrated circuit device App 20050142713 - Fujishima, Naoto ; et al.	2005-06-30
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same App 20050127439 - Matsuzaki, Kazuo ; et al.	2005-06-16
Semiconductor device and its manufacturing method App 20050087800 - Sugi, Akio ; et al.	2005-04-28
Semiconductor device App 20050062101 - Sugi, Akio ; et al.	2005-03-24
Semiconductor device and its manufacturing method Grant 6,858,500 - Sugi , et al. February 22, 2	2005-02-22
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same Grant 6,853,034 - Matsuzaki , et al. February 8, 2	2005-02-08
Manufacturing method of a semiconductor device App 20050020040 - Yamaji, Masaharu ; et al.	2005-01-27
Trench-type MOSFET having a reduced device pitch and on-resistance App 20040256666 - Fujishima, Naoto ; et al.	2004-12-23
Semiconductor integrated circuit device and method of manufacturing the same Grant 6,800,904 - Fujishima , et al. October 5, 2	2004-10-05
Semiconductor device and method of manufacturing the device App 20040178445 - Sugi, Akio ; et al.	2004-09-16
Trench-type MOSFET having a reduced device pitch and on-resistance Grant 6,781,197 - Fujishima , et al. August 24, 2	2004-08-24
Semiconductor device and a method for manufacturing same App 20040147078 - Fujishima, Naoto	2004-07-29
High withstand voltage semiconductor device Grant 6,740,952 - Fujishima , et al. May 25, 2	2004-05-25
Semiconductor integrated circuit device and method of manufacturing the same App 20040075138 - Fujishima, Naoto ; et al.	2004-04-22
Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same App 20040014263 - Fujishima, Naoto ; et al.	2004-01-22
Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same Grant 6,664,163 - Fujishima , et al. December 16, 2	2003-12-16
Semiconductor device Grant 6,639,274 - Fujishima October 28, 2	2003-10-28
Semiconductor device and a method for manufacturing same Grant 6,624,470 - Fujishima September 23, 2	2003-09-23
Semiconductor device and its manufacturing method App 20030164527 - Sugi, Akio ; et al.	2003-09-04
Semiconductor device and semiconductor device manufacturing method App 20030132460 - Tabuchi, Katsuya ; et al.	2003-07-17
MIS semiconductor device with low on resistance and high breakdown voltage Grant 6,525,390 - Tada , et al. February 25, 2	2003-02-25
Semiconductor device and a method for manufacturing same App 20020179928 - Fujishima, Naoto	2002-12-05
Semiconductor device App 20020179967 - Fujishima, Naoto	2002-12-05
Trench-type MOSFET having a reduced device pitch and on-resistance App 20020158287 - Fujishima, Naoto ; et al.	2002-10-31
High withstand voltage semiconductor device App 20020145172 - Fujishima, Naoto ; et al.	2002-10-10
Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same App 20020113263 - Fujishima, Naoto ; et al.	2002-08-22
Semiconductor device App 20010048122 - Tada, Gen ; et al.	2001-12-06
Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same Grant 6,316,807 - Fujishima , et al. November 13, 2	2001-11-13
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same App 20010038122 - Matsuzaki, Kazuo ; et al.	2001-11-08
Method of manufacturing vertical trench misfet Grant 6,174,773 - Fujishima January 16, 2	2001-01-16
Lateral semiconductor arrangement for power IGS Grant 6,066,863 - Fujishima May 23, 2	2000-05-23
Vertical trench misfet and method of manufacturing the same Grant 5,981,996 - Fujishima November 9, 1	1999-11-09
Lateral field effect transistor and method of manufacturing the same Grant 5,917,217 - Kitamura , et al. June 29, 1	1999-06-29
Lateral trench MISFET and method of manufacturing the same Grant 5,885,878 - Fujishima , et al. March 23, 1	1999-03-23
High withstand-voltage lateral MOSFET with a trench and method of producing the same Grant 5,844,275 - Kitamura , et al. December 1, 1	1998-12-01
Lateral semiconductor arrangement for power ICS Grant 5,801,420 - Fujishima September 1, 1	1998-09-01
Back-source MOSFET Grant 5,760,440 - Kitamura , et al. June 2, 1	1998-06-02
Method of manufacturing a semiconductor device using gate side wall as mask for self-alignment Grant 5,739,061 - Kitamura , et al. April 14, 1	1998-04-14
Horizontal MOSFET Grant 5,705,842 - Kitamura , et al. January 6, 1	1998-01-06
Lateral trench MISFET Grant 5,701,026 - Fujishima , et al. December 23, 1	1997-12-23
High voltage MIS field effect transistor Grant 5,523,599 - Fujishima , et al. June 4, 1	1996-06-04
Lateral type field effect transistor Grant 5,502,323 - Kitamura , et al. March 26, 1	1996-03-26
High voltage MIS transistor and semiconductor device Grant 5,436,486 - Fujishima , et al. July 25, 1	1995-07-25
High withstand voltage M I S field effect transistor and semiconductor integrated circuit Grant 5,432,370 - Kitamura , et al. July 11, 1	1995-07-11
Semiconductor with a conductivity modulating-type MISFET Grant 5,276,339 - Fujishima January 4, 1	1994-01-04