| Patent | Date |
|---|
Semiconductor device and method for manufacturing semiconductor device
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Power semiconductor device
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Power Semiconductor Device
App 20190058037 - INOUE; Atsufumi ; et al. | 2019-02-21 |
Semiconductor Device And Method For Producing Semiconductor Device
App 20190051538 - FUJIOKA; Yasushi ; et al. | 2019-02-14 |
Thin film solar cell and manufacturing method thereof
Grant 7,750,233 - Fujioka , et al. July 6, 2 | 2010-07-06 |
Semiconductor device manufacturing unit and semiconductor device manufacturing method
Grant 7,722,738 - Kishimoto , et al. May 25, 2 | 2010-05-25 |
Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same
Grant 7,565,880 - Shimizu , et al. July 28, 2 | 2009-07-28 |
Processing Apparatus, Exhaust Processing Process And Plasma Processing Process
App 20090145555 - SAWAYAMA; TADASHI ; et al. | 2009-06-11 |
Processing Apparatus, Exhaust Processing Process And Plasma Processing Process
App 20090114155 - Sawayama; Tadashi ; et al. | 2009-05-07 |
Processing Apparatus, Exhaust Processing Process And Plasma Processing Process
App 20090095420 - Sawayama; Tadashi ; et al. | 2009-04-16 |
Processing Apparatus, Exhaust Processing Process And Plasma Processing Process
App 20090084500 - Sawayama; Tadashi ; et al. | 2009-04-02 |
Processing Apparatus, Exhaust Processing Process And Plasma Processing Process
App 20080014345 - SAWAYAMA; TADASHI ; et al. | 2008-01-17 |
Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same
App 20070131170 - Shimizu; Akira ; et al. | 2007-06-14 |
Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same
Grant 7,195,673 - Shimizu , et al. March 27, 2 | 2007-03-27 |
Thin film solar cell and manufacturing method thereof
App 20060196536 - Fujioka; Yasushi ; et al. | 2006-09-07 |
Thin film formation apparatus including engagement members for support during thermal expansion
Grant 7,032,536 - Fukuoka , et al. April 25, 2 | 2006-04-25 |
Apparatus for manufacturing photovoltaic elements
App 20050161077 - Okabe, Shotaro ; et al. | 2005-07-28 |
Manufacturing method of silicon thin film solar cell
App 20050022864 - Fujioka, Yasushi ; et al. | 2005-02-03 |
Thin film solar battery module
Grant 6,822,157 - Fujioka November 23, 2 | 2004-11-23 |
Processing apparatus, exhaust processing process and plasma processing process
App 20040161533 - Sawayama, Tadashi ; et al. | 2004-08-19 |
Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the same
App 20040126493 - Shimizu, Akira ; et al. | 2004-07-01 |
Semiconductor device manufacturing unit and semiconductor device manufacturing method
App 20040113287 - Kishimoto, Katsushi ; et al. | 2004-06-17 |
Thin film formation apparatus and thin film formation method employing the apparatus
App 20040069230 - Fukuoka, Yusuke ; et al. | 2004-04-15 |
Processing Apparatus, Exhaust Processing Process And Plasma Processing
App 20030164225 - SAWAYAMA, TADASHI ; et al. | 2003-09-04 |
Method of manufacturing photovoltaic element and apparatus therefor
App 20030124819 - Okabe, Shotaro ; et al. | 2003-07-03 |
Thin film solar battery module
App 20030070706 - Fujioka, Yasushi | 2003-04-17 |
Thin-film solar cell module
Grant 6,525,264 - Ouchida , et al. February 25, 2 | 2003-02-25 |
Production apparatus of semiconductor layer employing DC bias and VHF power
App 20030022519 - Fujioka, Yasushi ; et al. | 2003-01-30 |
Process for producing a semiconductor device
Grant 6,495,392 - Sakai , et al. December 17, 2 | 2002-12-17 |
Method of manufacturing photovoltaic element and apparatus therefor
Grant 6,368,944 - Okabe , et al. April 9, 2 | 2002-04-09 |
Thin-film solar cell module
App 20020026955 - Ouchida, Takashi ; et al. | 2002-03-07 |
Process for producing a semiconductor device
App 20020016017 - Sakai, Akira ; et al. | 2002-02-07 |
Production process of semiconductor layer, fabrication process of photovoltaic cell and production apparatus of semiconductor layer
App 20020001924 - Fujioka, Yasushi ; et al. | 2002-01-03 |
Plasma processing apparatus and plasma processing method
Grant 6,313,430 - Fujioka , et al. November 6, 2 | 2001-11-06 |
Method of producing a photovoltaic device using a sputtering method
Grant 6,306,267 - Tamura , et al. October 23, 2 | 2001-10-23 |
Deposition of semiconductor layer by plasma process
Grant 6,287,943 - Fujioka , et al. September 11, 2 | 2001-09-11 |
Film deposition apparatus
Grant 6,223,684 - Fujioka , et al. May 1, 2 | 2001-05-01 |
Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element
Grant 6,159,763 - Sakai , et al. December 12, 2 | 2000-12-12 |
Continuous forming method for functional deposited films and deposition apparatus
Grant 5,968,274 - Fujioka , et al. October 19, 1 | 1999-10-19 |
Continuously film-forming apparatus provided with improved gas gate means
Grant 5,919,310 - Fujioka , et al. July 6, 1 | 1999-07-06 |
Photovoltaic element and fabrication process thereof
Grant 5,720,826 - Hayashi , et al. February 24, 1 | 1998-02-24 |
Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same
Grant 5,714,010 - Matsuyama , et al. February 3, 1 | 1998-02-03 |
Photovoltaic elements and process and apparatus for their formation
Grant 5,589,007 - Fujioka , et al. December 31, 1 | 1996-12-31 |
Apparatus for forming a deposited film
Grant 5,575,855 - Kanai , et al. November 19, 1 | 1996-11-19 |
Method and apparatus for continuously forming functional deposited films with a large area by a microwave plasma CVD method
Grant 5,527,391 - Echizen , et al. June 18, 1 | 1996-06-18 |
Continuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating space
Grant 5,510,151 - Matsuyama , et al. April 23, 1 | 1996-04-23 |
Method for forming a photoelectric deposited film
Grant 5,468,521 - Kanai , et al. November 21, 1 | 1995-11-21 |
Relay and exchange system for time division multiplex data
Grant 5,291,484 - Tomita , et al. March 1, 1 | 1994-03-01 |
Solar cell
Grant 5,284,525 - Saito , et al. February 8, 1 | 1994-02-08 |
Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers
Grant 5,266,116 - Fujioka , et al. November 30, 1 | 1993-11-30 |
Substrate having an uneven surface for solar cell and a solar cell provided with said substrate
Grant 5,244,509 - Arao , et al. September 14, 1 | 1993-09-14 |
Microwave PCVD method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation
Grant 5,130,170 - Kanai , et al. July 14, 1 | 1992-07-14 |
Method for continuously forming functional deposited films with a large area by a microwave plasma CVD method
Grant 5,114,770 - Echizen , et al. May 19, 1 | 1992-05-19 |
Semiconductor device having a semiconductor region in which a band gap being continuously graded
Grant 5,093,704 - Saito , et al. * March 3, 1 | 1992-03-03 |
Functional ZnSe.sub.1-x Te.sub.x :H deposited film
Grant 5,028,488 - Nakagawa , et al. July 2, 1 | 1991-07-02 |
Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic %
Grant 4,959,106 - Nakagawa , et al. September 25, 1 | 1990-09-25 |
Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer
Grant 4,940,642 - Shirai , et al. July 10, 1 | 1990-07-10 |
Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
Grant 4,926,229 - Nakagawa , et al. May 15, 1 | 1990-05-15 |
Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %
Grant 4,888,062 - Nakagawa , et al. December 19, 1 | 1989-12-19 |
Functional ZnSe:H deposited films
Grant 4,851,302 - Nakagawa , et al. July 25, 1 | 1989-07-25 |
Light receiving member for use in electrophotography and process for the production thereof
Grant 4,824,749 - Shirai , et al. April 25, 1 | 1989-04-25 |
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