Fujinaga; Masato

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fujinaga; Masato.The latest application filed is for "high-frequency semiconductor device and method of manufacturing the same".

Company Profile

0.7.3

Fujinaga; Masato - Tokyo JP
Fujinaga; Masato - Hyogo JP
Fujinaga; Masato - Itami JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
High-frequency semiconductor device and method of manufacturing the same Grant 7,365,433 - Fujinaga April 29, 2	2008-04-29
High-frequency semiconductor device and method of manufacturing the same App 20060267209 - Fujinaga; Masato	2006-11-30
High-Frequency semiconductor device with noise elimination characteristic Grant 7,095,118 - Fujinaga August 22, 2	2006-08-22
Semiconductor device including low dielectric constant insulating film formed on upper and side surfaces of the gate electrode Grant 6,670,711 - Fujinaga , et al. December 30, 2	2003-12-30
Semiconductor device and method of manufacturing same App 20030089922 - Fujinaga, Masato ; et al.	2003-05-15
High- frequency semiconductor device and method of manufacturing the same App 20020056920 - Fujinaga, Masato	2002-05-16
Method of making a mask pattern Grant 6,355,387 - Fujinaga , et al. March 12, 2	2002-03-12
Semiconductor device having electrode for collecting electric charge in channel region Grant 5,416,339 - Fujinaga , et al. May 16, 1	1995-05-16
Semiconductor workpiece topography prediction method Grant 5,307,296 - Uchida , et al. April 26, 1	1994-04-26
Topography simulation method Grant 5,070,469 - Kunikiyo , et al. December 3, 1	1991-12-03

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