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Patent applications and USPTO patent grants for Fujimura; Isao.The latest application filed is for "nitride semiconductor material and production process of nitride semiconductor crystal".
Patent | Date |
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Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrate Grant 8,142,566 - Kiyomi , et al. March 27, 2 | 2012-03-27 |
Nitride Semiconductor Material And Production Process Of Nitride Semiconductor Crystal App 20090026488 - Kiyomi; Kazumasa ;   et al. | 2009-01-29 |
Ga-Containing Nitride Semiconductor Single Crystal, Production Method Thereof, and Substrate and Device Using the Crystal App 20080308812 - Kiyomi; Kazumasa ;   et al. | 2008-12-18 |
Spinneret assembly Grant 4,717,325 - Fujimura , et al. January 5, 1 | 1988-01-05 |
Polyolefin foamed fibers and process producing the same Grant 4,485,141 - Fujimura , et al. November 27, 1 | 1984-11-27 |
Non-woven fabric Grant 4,483,897 - Fujimura , et al. November 20, 1 | 1984-11-20 |
Crimpable, Colored Polypropylene Composite Fibers Grant 3,657,062 - Eshima , et al. April 18, 1 | 1972-04-18 |
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