Fujimaki; Nobuyoshi
Patent Applications and Registrations
Patent applications and USPTO patent grants for Fujimaki; Nobuyoshi.The latest application filed is for "heat treatment of si single crystal".
- Fujimaki; Nobuyoshi - Gunma-ken JP
- Fujimaki; Nobuyoshi - Tokyo JP
- Fujimaki; Nobuyoshi - Annaka JP
| Patent | Date |
|---|---|
| Heat treatment of Si single crystal Grant 5,834,322 - Fusegawa , et al. November 10, 1 | 1998-11-10 |
| Process and apparatus for manufacturing MOS device Grant 5,683,513 - Fujimaki November 4, 1 | 1997-11-04 |
| Method of oxidizing a semiconductor wafer Grant 5,620,932 - Fujimaki April 15, 1 | 1997-04-15 |
| Method for testing electrical properties of silicon single crystal Grant 5,534,112 - Fusegawa , et al. July 9, 1 | 1996-07-09 |
| Method of producing MOS devices Grant 5,492,845 - Fujimaki February 20, 1 | 1996-02-20 |
| Method and apparatus for evaluation of semiconductor production process Grant 5,464,779 - Fujimaki November 7, 1 | 1995-11-07 |
| Method and apparatus for measuring high-frequency C-V characteristics of MIS device Grant 5,442,302 - Fujimaki August 15, 1 | 1995-08-15 |
| Method and apparatus for producing silicon single crystal Grant 5,248,378 - Oda , et al. September 28, 1 | 1993-09-28 |
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