Fu; Tzy-Tzan
Patent Applications and Registrations
Patent applications and USPTO patent grants for Fu; Tzy-Tzan.The latest application filed is for "limiting hydrogen ion diffusion using multiple layers of sio2 and si3n4".
- Fu; Tzy-Tzan - Hsinchu TW
- Fu; Tzy-Tzan - Hsin-Chu 300 TW
| Patent | Date |
|---|---|
| Limiting hydrogen ion diffusion using multiple layers of SiO2 and Si3N4 Grant 6,596,576 - Fu , et al. July 22, 2 | 2003-07-22 |
| Method of making a transistor, in particular spacers of the transistor Grant 6,566,183 - Chen , et al. May 20, 2 | 2003-05-20 |
| Limiting Hydrogen ion diffusion using multiple layers of SiO2 and Si3N4 App 20020146879 - Fu, Tzy-Tzan ; et al. | 2002-10-10 |
| Method of forming silicon nitride on a substrate App 20020086541 - Fu, Tzy-Tzan ; et al. | 2002-07-04 |
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