Fu; Chu-Yun

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fu; Chu-Yun.The latest application filed is for "method of fabricating semiconductor device isolation structure".

Company Profile

2.44.30

Fu; Chu-Yun - Hsinchu TW
Fu; Chu-Yun - Hsin-Chu TW
FU; Chu-Yun - Hsinchu City TW
Fu; Chu-Yun - Taipei N/A TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of fabricating semiconductor device isolation structure Grant 10,269,616 - Yu , et al.	2019-04-23
Method of Fabricating Semiconductor Device Isolation Structure App 20170330791 - Yu; Chen-Hua ; et al.	2017-11-16
Fin field effect transistor Grant 9,716,091 - Lin , et al. July 25, 2	2017-07-25
Method of fabricating semiconductor device isolation structure Grant 9,673,082 - Yu , et al. June 6, 2	2017-06-06
Fin Field Effect Transistor App 20160379977 - LIN; Hung-Ta ; et al.	2016-12-29
Fin field effect transistor Grant 9,379,215 - Lin , et al. June 28, 2	2016-06-28
Method of Fabricating Semiconductor Device Isolation Structure App 20160133506 - Yu; Chen-Hua ; et al.	2016-05-12
Fin Field Effect Transistor App 20160087079 - Lin; Hung-Ta ; et al.	2016-03-24
Method of fabricating semiconductor device isolation structure Grant 9,224,606 - Yu , et al. December 29, 2	2015-12-29
Fin field effect transistor Grant 9,209,300 - Lin , et al. December 8, 2	2015-12-08
Method of fabrication of a FinFET element Grant 8,883,597 - Chang , et al. November 11, 2	2014-11-11
Fin Field Effect Transistor App 20140327091 - LIN; Hung-Ta ; et al.	2014-11-06
Self-aligned halo/pocket implantation for reducing leakage and source/drain resistance in MOS devices Grant 8,822,293 - Yu , et al. September 2, 2	2014-09-02
Fin held effect transistor Grant 8,809,940 - Lin , et al. August 19, 2	2014-08-19
Method for fabricating an isolation structure Grant 8,580,653 - Lee , et al. November 12, 2	2013-11-12
Fin Field Effect Transistor App 20130228865 - LIN; Hung-Ta ; et al.	2013-09-05
Method For Fabricating An Isolation Structure App 20130171803 - LEE; Tze-Liang ; et al.	2013-07-04
FinFET and method of fabricating the same Grant 8,440,517 - Lin , et al. May 14, 2	2013-05-14
Method for fabricating an isolation structure Grant 8,404,561 - Lee , et al. March 26, 2	2013-03-26
Fabrication of source/drain extensions with ultra-shallow junctions Grant 8,173,503 - Chiu , et al. May 8, 2	2012-05-08
Method of Fabricating Semiconductor Device Isolation Structure App 20120094464 - Yu; Chen-Hua ; et al.	2012-04-19
Finfet And Method Of Fabricating The Same App 20120091538 - LIN; Hung-Ta ; et al.	2012-04-19
Method of fabricating semiconductor device isolation structure Grant 8,110,890 - Yu , et al. February 7, 2	2012-02-07
Polysilicon gate formation by in-situ doping Grant 7,892,909 - Yu , et al. February 22, 2	2011-02-22
Method For Fabricating An Isolation Structure App 20100291751 - LEE; Tze-Liang ; et al.	2010-11-18
Fabrication of Source/Drain Extensions with Ultra-Shallow Junctions App 20100216288 - Chiu; Yihang ; et al.	2010-08-26
Fabrication of FinFETs with multiple fin heights Grant 7,612,405 - Yu , et al. November 3, 2	2009-11-03
Method for forming a multi-layer shallow trench isolation structure in a semiconductor device Grant 7,611,963 - Yang , et al. November 3, 2	2009-11-03
A Method For Forming A Multi-layer Shallow Trench Isolation Structure In A Semiconductor Device App 20090267176 - Yang; Shu-Tine ; et al.	2009-10-29
Self-Aligned Halo/Pocket Implantation for Reducing Leakage and Source/Drain Resistance in MOS Devices App 20090233410 - Yu; Chen-Hua ; et al.	2009-09-17
Method Of Fabrication Of A Finfet Element App 20090035909 - Chang; Cheng-Hung ; et al.	2009-02-05
Method of Fabricating Semiconductor Device Isolation Structure App 20080303104 - Yu; Chen-Hua ; et al.	2008-12-11
Polysilicon gate formation by in-situ doping App 20080194072 - Yu; Chen-Hua ; et al.	2008-08-14
Polysilicon gate formation by in-situ doping App 20080194087 - Yu; Chen-Hua ; et al.	2008-08-14
N/PMOS saturation current, HCE, and Vt stability by contact etch stop film modifications Grant 7,371,629 - Fu , et al. May 13, 2	2008-05-13
Scratch reduction for chemical mechanical polishing Grant 7,297,632 - Hou , et al. November 20, 2	2007-11-20
Method of achieving improved STI gap fill with reduced stress Grant 7,118,987 - Fu , et al. October 10, 2	2006-10-10
High performance strained channel MOSFETs by coupled stress effects Grant 7,119,404 - Chang , et al. October 10, 2	2006-10-10
Scratch reduction for chemical mechanical polishing App 20060211250 - Hou; Chuang-Ping ; et al.	2006-09-21
Shallow trench isolation method for reducing oxide thickness variations at different pattern densities Grant 7,098,116 - Lu , et al. August 29, 2	2006-08-29
System and method for contact module processing App 20060157776 - Chang; Cheng-Hung ; et al.	2006-07-20
Method and apparatus for real-time control and monitor of deposition processes App 20060049036 - Chang; Cheng-Hung ; et al.	2006-03-09
Selectively strained MOSFETs to improve drive current App 20060024879 - Fu; Chu-Yun ; et al.	2006-02-02
High performance strained channel mosfets by coupled stress effects App 20050260806 - Chang, Cheng-Hung ; et al.	2005-11-24
Method of achieving improved STI gap fill with reduced stress App 20050170606 - Fu, Chu-Yun ; et al.	2005-08-04
Novel shallow trench isolation method for reducing oxide thickness variations at different pattern densities App 20050153519 - Lu, Chih-Cheng ; et al.	2005-07-14
Test region layout for shallow trench isolation App 20050095727 - Chang, Weng ; et al.	2005-05-05
Method of forming contact plug on silicide structure Grant 6,884,736 - Wu , et al. April 26, 2	2005-04-26
N/PMOS saturation current, HCE, and Vt stability by contact etch stop film modifications App 20040110392 - Fu, Chu-Yun ; et al.	2004-06-10
Method of forming contact plug on silicide structure App 20040067635 - Wu, Chii-Ming ; et al.	2004-04-08
Method for depositing dielectric materials onto semiconductor substrates by HDP (high density plasma) CVD (chemical vapor deposition) processes without damage to FET active devices Grant 6,713,406 - Fu , et al. March 30, 2	2004-03-30
Borderless contact with buffer layer Grant 6,630,398 - Tsai , et al. October 7, 2	2003-10-07
In situ dry etching procedure to form a borderless contact hole Grant 6,497,993 - Chiu , et al. December 24, 2	2002-12-24
Borderless contact with buffer layer App 20020192943 - Tsai, Ming Huan ; et al.	2002-12-19
Interlevel dielectric composite layer for insulation of polysilicon and metal structures Grant 6,479,385 - Jang , et al. November 12, 2	2002-11-12
Method of high density plasma phosphosilicate glass process on pre-metal dielectric application for plasma damage reducing and throughput improvement Grant 6,461,966 - Chen , et al. October 8, 2	2002-10-08
Method to reduce STI HDP-CVD USG deposition induced defects Grant 6,426,272 - Fu , et al. July 30, 2	2002-07-30
Crack resistant multi-layer dielectric layer and method for formation thereof Grant 6,372,664 - Jang , et al. April 16, 2	2002-04-16
Integrated high density plasma chemical vapor deposition (HDP-CVD) method and chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layers Grant 6,365,523 - Jang , et al. April 2, 2	2002-04-02
High selectivity Si-rich SiON etch-stop layer Grant 6,316,348 - Fu , et al. November 13, 2	2001-11-13
High selectivity Si-rich SiON etch-stop layer App 20010034121 - Fu, Chu Yun ; et al.	2001-10-25
High selectivity Si-rich SiON etch-stop layer Grant 6,245,669 - Fu , et al. June 12, 2	2001-06-12
Removal of SiON ARC film after poly photo and etch Grant 6,245,682 - Fu , et al. June 12, 2	2001-06-12
Shallow trench isolation methods employing gap filling doped silicon oxide dielectric layer Grant 6,214,698 - Liaw , et al. April 10, 2	2001-04-10
Method of patterning narrow gate electrode Grant 6,174,818 - Tao , et al. January 16, 2	2001-01-16
Chemical mechanical polish (CMP) planarizing trench fill method employing composite trench fill layer Grant 6,090,714 - Jang , et al. July 18, 2	2000-07-18
Shallow trench isolation filled by high density plasma chemical vapor deposition Grant 6,037,018 - Jang , et al. March 14, 2	2000-03-14

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