Patent | Date |
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Co-integration Of Gate-all-around Fet, Finfet And Passive Devices On Bulk Substrate App 20220310590 - Frougier; Julien ;   et al. | 2022-09-29 |
Gate-all-around Devices With Isolated And Non-isolated Epitaxy Regions For Strain Engineering App 20220310602 - Greene; Andrew M. ;   et al. | 2022-09-29 |
Substrate Thinning For A Backside Power Distribution Network App 20220301878 - Xie; Ruilong ;   et al. | 2022-09-22 |
Scalable heat sink and magnetic shielding for high density MRAM arrays Grant 11,444,238 - Frougier , et al. September 13, 2 | 2022-09-13 |
True random number generation and physically unclonable functions using voltage control of magnetic anisotropy effects in STT-MRAM Grant 11,435,982 - Dixit , et al. September 6, 2 | 2022-09-06 |
Wrap-around contacts including localized metal silicide Grant 11,424,367 - Miller , et al. August 23, 2 | 2022-08-23 |
Magnetoresistive random-access memory device structure Grant 11,411,048 - Wu , et al. August 9, 2 | 2022-08-09 |
Variable Sheet Forkfet Device App 20220231020 - Frougier; Julien ;   et al. | 2022-07-21 |
Nanosheet Transistors With Wrap Around Contact App 20220208981 - Frougier; Julien ;   et al. | 2022-06-30 |
Reducing parasitic bottom electrode resistance of embedded MRAM Grant 11,374,167 - Frougier , et al. June 28, 2 | 2022-06-28 |
Wrap-around Contacts Including Localized Metal Silicide App 20220190161 - Miller; Eric ;   et al. | 2022-06-16 |
Epitaxial semiconductor material regions for transistor devices and methods of forming same Grant 11,362,177 - Malinowski , et al. June 14, 2 | 2022-06-14 |
Fin Stack Including Tensile-strained And Compressively Strained Fin Portions App 20220157816 - Cheng; Kangguo ;   et al. | 2022-05-19 |
Mtj-based Analog Memory Device App 20220130441 - Houssameddine; Dimitri ;   et al. | 2022-04-28 |
Structures and SRAM bit cells integrating complementary field-effect transistors Grant 11,309,319 - Mann , et al. April 19, 2 | 2022-04-19 |
Semiconductor FET device with bottom isolation and high-.kappa. first Grant 11,295,988 - Xie , et al. April 5, 2 | 2022-04-05 |
Enhanced bottom dielectric isolation in gate-all-around devices Grant 11,282,961 - Frougier , et al. March 22, 2 | 2022-03-22 |
Stacked spin-orbit-torque magnetoresistive random-access memory Grant 11,251,362 - Wu , et al. February 15, 2 | 2022-02-15 |
Nanosheet Transistor With Self-aligned Dielectric Pillar App 20220028729 - Xie; Ruilong ;   et al. | 2022-01-27 |
Partial Wrap Around Top Contact App 20220020634 - Xie; Ruilong ;   et al. | 2022-01-20 |
Formation of contacts for semiconductor devices Grant 11,227,801 - Xie , et al. January 18, 2 | 2022-01-18 |
Augmented Semiconductor Lasers With Spontaneous Emissions Blockage App 20220013986 - FROUGIER; Julien ;   et al. | 2022-01-13 |
Semiconductor device with metal structure under an active layer Grant 11,217,533 - Soss , et al. January 4, 2 | 2022-01-04 |
Forming Nanosheet Transistor Using Sacrificial Spacer And Inner Spacers App 20210399114 - Cheng; Kangguo ;   et al. | 2021-12-23 |
Epitaxial semiconductor material regions for transistor devices and methods of forming same Grant 11,205,699 - Malinowski , et al. December 21, 2 | 2021-12-21 |
Semiconductor FET Device with Bottom Isolation and High-k First App 20210391222 - Xie; Ruilong ;   et al. | 2021-12-16 |
Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistor Grant 11,201,152 - Xie , et al. December 14, 2 | 2021-12-14 |
Nanosheet transistor with self-aligned dielectric pillar Grant 11,195,746 - Xie , et al. December 7, 2 | 2021-12-07 |
Scalable Heat Sink And Magnetic Shielding For High Density Mram Arrays App 20210359197 - FROUGIER; JULIEN ;   et al. | 2021-11-18 |
Augmented semiconductor lasers with spontaneous emissions blockage Grant 11,177,632 - Frougier , et al. November 16, 2 | 2021-11-16 |
Planarization Controllability For Interconnect Structures App 20210351064 - Xie; Ruilong ;   et al. | 2021-11-11 |
Via Interconnects For A Magnetoresistive Random-access Memory Device App 20210351340 - Frougier; Julien ;   et al. | 2021-11-11 |
Planarization controllability for interconnect structures Grant 11,171,044 - Xie , et al. November 9, 2 | 2021-11-09 |
Fin-type field-effect transistors over one or more buried polycrystalline layers Grant 11,164,867 - Adusumilli , et al. November 2, 2 | 2021-11-02 |
Methods of forming a conductive contact structure to an embedded memory device on an IC product and a corresponding IC product Grant 11,158,574 - LiCausi , et al. October 26, 2 | 2021-10-26 |
Enhanced Bottom Dielectric Isolation In Gate-all-around Devices App 20210305420 - FROUGIER; Julien ;   et al. | 2021-09-30 |
Vertical Transport Field-effect Transistor Including Replacement Gate App 20210296494 - Xie; Ruilong ;   et al. | 2021-09-23 |
Integrating Embedded Memory On Cmos Logic Using Thin Film Transistors App 20210296396 - Wu; Heng ;   et al. | 2021-09-23 |
Formation Of Contacts For Semiconductor Devices App 20210296178 - Xie; Ruilong ;   et al. | 2021-09-23 |
Augmented Semiconductor Lasers With Spontaneous Emissions Blockage App 20210288468 - FROUGIER; Julien ;   et al. | 2021-09-16 |
Forming nanosheet transistor using sacrificial spacer and inner spacers Grant 11,121,233 - Cheng , et al. September 14, 2 | 2021-09-14 |
Methods of forming a conductive contact structure to an embedded memory device on an IC product and a corresponding IC product Grant 11,121,087 - LiCausi , et al. September 14, 2 | 2021-09-14 |
Reducing Parasitic Bottom Electrode Resistance Of Embedded Mram App 20210280776 - Frougier; Julien ;   et al. | 2021-09-09 |
Integration of split gate metal-oxide-nitride-oxide-semiconductor memory with vertical FET Grant 11,107,827 - Xie , et al. August 31, 2 | 2021-08-31 |
Magnetoresistive Random-access Memory Device Structure App 20210265422 - Wu; Heng ;   et al. | 2021-08-26 |
Nanosheet field effect transistor with spacers between sheets Grant 11,101,348 - Xie , et al. August 24, 2 | 2021-08-24 |
Stacked Spin-orbit-torque Magnetoresistive Random-access Memory App 20210257543 - Wu; Heng ;   et al. | 2021-08-19 |
Gate-all-around field effect transistor having stacked U shaped channels configured to improve the effective width of the transistor Grant 11,094,784 - Cheng , et al. August 17, 2 | 2021-08-17 |
Nanosheet device with tall suspension and tight contacted gate poly-pitch Grant 11,094,803 - Xie , et al. August 17, 2 | 2021-08-17 |
Air spacer structures Grant 11,094,794 - Frougier , et al. August 17, 2 | 2021-08-17 |
Semiconductor Device With Metal Structure Under An Active Layer App 20210249352 - SOSS; STEVEN ROBERT ;   et al. | 2021-08-12 |
True Random Number Generation And Physically Unclonable Functions Using Voltage Control Of Magnetic Anisotropy Effects In Stt-mram App 20210240445 - Dixit; Hemant M. ;   et al. | 2021-08-05 |
Nanosheet Device With Tall Suspension And Tight Contacted Gate Poly-pitch App 20210234018 - Xie; Ruilong ;   et al. | 2021-07-29 |
Novel Epitaxial Semiconductor Material Regions For Transistor Devices And Methods Of Forming Same App 20210233999 - Malinowski; Arkadiusz ;   et al. | 2021-07-29 |
Field-effect transistors with channel regions that include a two-dimensional material on a mandrel Grant 11,069,819 - Frougier July 20, 2 | 2021-07-20 |
Steep-switch vertical field effect transistor Grant 11,069,744 - Chanemougame , et al. July 20, 2 | 2021-07-20 |
Nanosheet Transistor With Self-aligned Dielectric Pillar App 20210217654 - Xie; Ruilong ;   et al. | 2021-07-15 |
Transistor comprising a matrix of nanowires and methods of making such a transistor Grant 11,049,934 - Razavieh , et al. June 29, 2 | 2021-06-29 |
Methods Of Forming A Conductive Contact Structure To An Embedded Memory Device On An Ic Product And A Corresponding Ic Product App 20210193584 - LiCausi; Nicholas ;   et al. | 2021-06-24 |
Methods Of Forming A Conductive Contact Structure To An Embedded Memory Device On An Ic Product And A Corresponding Ic Product App 20210193573 - LiCausi; Nicholas ;   et al. | 2021-06-24 |
Integration of air spacer with self-aligned contact in transistor Grant 11,043,411 - Park , et al. June 22, 2 | 2021-06-22 |
Transistor having airgap spacer around gate structure Grant 11,011,638 - Xie , et al. May 18, 2 | 2021-05-18 |
Structure And Method For Random Code Generation App 20210141610 - Holt; Judson R. ;   et al. | 2021-05-13 |
Field-effect Transistors With Channel Regions That Include A Two-dimensional Material On A Mandrel App 20210135015 - Frougier; Julien | 2021-05-06 |
Steep-switch field effect transistor with integrated bi-stable resistive system Grant 10,991,808 - Frougier , et al. April 27, 2 | 2021-04-27 |
Novel Epitaxial Semiconductor Material Regions For Transistor Devices And Methods Of Forming Same App 20210118993 - Malinowski; Arkadiusz ;   et al. | 2021-04-22 |
Steep-switch Field Effect Transistor With Integrated Bi-stable Resistive System App 20210111225 - Frougier; Julien ;   et al. | 2021-04-15 |
Air Spacer Structures App 20210098591 - FROUGIER; Julien ;   et al. | 2021-04-01 |
Steep-switch field effect transistor with integrated bi-stable resistive system Grant 10,964,750 - Frougier , et al. March 30, 2 | 2021-03-30 |
Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions Grant 10,957,799 - Xie , et al. March 23, 2 | 2021-03-23 |
Transistor Comprising A Matrix Of Nanowires And Methods Of Making Such A Transistor App 20210083049 - Razavieh; Ali ;   et al. | 2021-03-18 |
Asymmetric gate cut isolation for SRAM Grant 10,950,610 - Paul , et al. March 16, 2 | 2021-03-16 |
Transistor Having Airgap Spacer App 20210066489 - Xie; Ruilong ;   et al. | 2021-03-04 |
Wrap-around contact for vertical field effect transistors Grant 10,923,590 - Cheng , et al. February 16, 2 | 2021-02-16 |
Gate-all-around Field Effect Transistors With Robust Inner Spacers And Methods App 20210043727 - Frougier; Julien ;   et al. | 2021-02-11 |
Fin-type Field-effect Transistors Over One Or More Buried Polycrystalline Layers App 20210043624 - Adusumilli; Siva P. ;   et al. | 2021-02-11 |
Neuromorphic circuit structure and method to form same Grant 10,909,443 - Nowak , et al. February 2, 2 | 2021-02-02 |
Gate-all-around field effect transistors with robust inner spacers and methods Grant 10,903,317 - Frougier , et al. January 26, 2 | 2021-01-26 |
Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions Grant 10,903,369 - Xie , et al. January 26, 2 | 2021-01-26 |
Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection Grant 10,903,315 - Loubet , et al. January 26, 2 | 2021-01-26 |
Positioning air-gap spacers in a transistor for improved control of parasitic capacitance Grant 10,903,331 - Loubet , et al. January 26, 2 | 2021-01-26 |
Asymmetric Gate Cut Isolation For Sram App 20210020644 - Paul; Bipul C. ;   et al. | 2021-01-21 |
Method of forming air-gap spacers and gate contact over active region and the resulting device Grant 10,886,378 - Xie , et al. January 5, 2 | 2021-01-05 |
Steep-switch field effect transistor with integrated bi-stable resistive system Grant 10,872,962 - Frougier , et al. December 22, 2 | 2020-12-22 |
Transistor Having Strain-inducing Anchors And A Strain-enhancing Suspended Channel App 20200365467 - Cheng; Kangguo ;   et al. | 2020-11-19 |
Structures And Sram Bit Cells Integrating Complementary Field-effect Transistors App 20200365601 - Mann; Randy W. ;   et al. | 2020-11-19 |
Structures and SRAM bit cells with a buried cross-couple interconnect Grant 10,840,146 - Paul , et al. November 17, 2 | 2020-11-17 |
Gate-all-around Field Effect Transistors With Inner Spacers And Methods App 20200357911 - Frougier; Julien ;   et al. | 2020-11-12 |
Integrating nanosheet transistors, on-chip embedded memory, and extended-gate transistors on the same substrate Grant 10,833,191 - Frougier , et al. November 10, 2 | 2020-11-10 |
Forming a reliable wrap-around contact without source/drain sacrificial regions Grant 10,832,954 - Frougier , et al. November 10, 2 | 2020-11-10 |
Fin-type field-effect transistors including a two-dimensional material Grant 10,818,803 - Frougier , et al. October 27, 2 | 2020-10-27 |
Nanosheet field-effect transistors formed with sacrificial spacers Grant 10,818,792 - Frougier , et al. October 27, 2 | 2020-10-27 |
Structures and SRAM bit cells integrating complementary field-effect transistors Grant 10,818,674 - Mann , et al. October 27, 2 | 2020-10-27 |
Method of forming wrap-around-contact and the resulting device Grant 10,804,398 - Frougier , et al. October 13, 2 | 2020-10-13 |
Gate-all-around Field Effect Transistor Having Stacked U Shaped Channels Configured To Improve The Effective Width Of The Transistor App 20200321434 - Cheng; Kangguo ;   et al. | 2020-10-08 |
Forming A Reliable Wrap-around Contact Without Source/drain Sacrifical Regions App 20200312980 - Frougier; Julien ;   et al. | 2020-10-01 |
Positioning Air-gap Spacers In A Transistor For Improved Control Of Parasitic Capacitance App 20200312977 - Loubet; Nicolas ;   et al. | 2020-10-01 |
Contact structures Grant 10,790,376 - Xie , et al. September 29, 2 | 2020-09-29 |
Wrap-Around Contact for Vertical Field Effect Transistors App 20200303543 - Cheng; Kangguo ;   et al. | 2020-09-24 |
Vertically stacked complementary-FET device with independent gate control Grant 10,784,171 - Frougier , et al. Sept | 2020-09-22 |
Multi-level Ferroelectric Memory Cell App 20200295017 - FROUGIER; Julien ;   et al. | 2020-09-17 |
Integrating Nanosheet Transistors, On-chip Embedded Memory, And Extended-gate Transistors On The Same Substrate App 20200287046 - Frougier; Julien ;   et al. | 2020-09-10 |
Structures And Sram Bit Cells Integrating Complementary Field-effect Transistors App 20200286900 - Mann; Randy W. ;   et al. | 2020-09-10 |
Unique gate cap and gate cap spacer structures for devices on integrated circuit products Grant 10,770,566 - Frougier , et al. Sep | 2020-09-08 |
Integration Of Split Gate Metal-oxide-nitride-oxide-semiconductor Memory With Vertical Fet App 20200279858 - XIE; RUILONG ;   et al. | 2020-09-03 |
Transistor Channel Having Vertically Stacked Nanosheets Coupled By Fin-shaped Bridge Regions App 20200274000 - XIE; RUILONG ;   et al. | 2020-08-27 |
Neuromorphic Circuit Structure And Method To Form Same App 20200272880 - Nowak; Edward J. ;   et al. | 2020-08-27 |
Transistor Channel Having Vertically Stacked Nanosheets Coupled By Fin-shaped Bridge Regions App 20200273979 - XIE; RUILONG ;   et al. | 2020-08-27 |
Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism Grant 10,756,203 - Frougier , et al. A | 2020-08-25 |
Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism Grant 10,741,675 - Frougier , et al. A | 2020-08-11 |
Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection Grant 10,741,639 - Loubet , et al. A | 2020-08-11 |
Gate-all-around transistor with spacer support and methods of forming same Grant 10,734,525 - Xie , et al. | 2020-08-04 |
Nanosheet field-effect transistor with substrate isolation Grant 10,714,567 - Frougier , et al. | 2020-07-14 |
Method Of Forming Air-gap Spacers And Gate Contact Over Active Region And The Resulting Device App 20200212192 - XIE; Ruilong ;   et al. | 2020-07-02 |
Gate-all-around field effect transistors with air-gap inner spacers and methods Grant 10,692,991 - Chanemougame , et al. | 2020-06-23 |
Airgap spacers formed in conjunction with a late gate cut Grant 10,679,894 - Frougier , et al. | 2020-06-09 |
Insulative structure with diffusion break integral with isolation layer and methods to form same Grant 10,665,669 - Xie , et al. | 2020-05-26 |
Non-self aligned gate contacts formed over the active region of a transistor Grant 10,665,692 - Xie , et al. | 2020-05-26 |
Integration Of Air Spacer With Self-aligned Contact In Transistor App 20200161169 - Park; Chanro ;   et al. | 2020-05-21 |
Nanosheet Field-effect Transistor With Substrate Isolation App 20200152734 - Frougier; Julien ;   et al. | 2020-05-14 |
Airgap Spacers Formed In Conjunction With A Late Gate Cut App 20200152504 - Frougier; Julien ;   et al. | 2020-05-14 |
Inner spacer formation in a nanosheet field-effect transistor Grant 10,651,291 - Frougier , et al. | 2020-05-12 |
Steep-switch Field Effect Transistor With Integrated Bi-stable Resistive System App 20200144385 - Frougier; Julien ;   et al. | 2020-05-07 |
Fin-type field effect transistors with uniform channel lengths and below-channel isolation on bulk semiconductor substrates and methods Grant 10,644,157 - Frougier , et al. | 2020-05-05 |
Non-self Aligned Gate Contacts Formed Over The Active Region Of A Transistor App 20200135885 - Xie; Ruilong ;   et al. | 2020-04-30 |
Hybrid dual damascene structures with enlarged contacts Grant 10,629,516 - Chanemougame , et al. | 2020-04-21 |
Method Of Forming Wrap-around-contact And The Resulting Device App 20200119180 - FROUGIER; Julien ;   et al. | 2020-04-16 |
Formation Of Dielectric Layer As Etch-stop For Source And Drain Epitaxy Disconnection App 20200105868 - LOUBET; Nicolas ;   et al. | 2020-04-02 |
Formation Of Dielectric Layer As Etch-stop For Source And Drain Epitaxy Disconnection App 20200105869 - LOUBET; Nicolas ;   et al. | 2020-04-02 |
Field-effect transistors including multiple gate lengths Grant 10,608,082 - Frougier , et al. | 2020-03-31 |
Steep-switch Vertical Field Effect Transistor App 20200091237 - Chanemougame; Daniel ;   et al. | 2020-03-19 |
Integration Of Air Spacer With Self-aligned Contact In Transistor App 20200083101 - Park; Chanro ;   et al. | 2020-03-12 |
Nanosheet Fet With Box Isolation On Substrate App 20200083384 - Frougier; Julien ;   et al. | 2020-03-12 |
Gate-all-around Field Effect Transistors With Air-gap Inner Spacers And Methods App 20200083352 - Chanemougame; Daniel ;   et al. | 2020-03-12 |
Nanosheet FET device with epitaxial nucleation Grant 10,586,856 - Loubet , et al. | 2020-03-10 |
Hybrid Dual Damascene Structures With Enlarged Contacts App 20200075456 - Chanemougame; Daniel ;   et al. | 2020-03-05 |
Integration of air spacer with self-aligned contact in transistor Grant 10,580,692 - Park , et al. | 2020-03-03 |
Nanosheet Field-effect Transistors Formed With Sacrificial Spacers App 20200066894 - Frougier; Julien ;   et al. | 2020-02-27 |
Nanosheet FET with box isolation on substrate Grant 10,573,755 - Frougier , et al. Feb | 2020-02-25 |
Contact Structures App 20200058757 - XIE; Ruilong ;   et al. | 2020-02-20 |
Steep-switch field effect transistor with integrated bi-stable resistive system Grant 10,566,436 - Frougier , et al. Feb | 2020-02-18 |
Unique Gate Cap And Gate Cap Spacer Structures For Devices On Integrated Circuit Products App 20200052088 - Frougier; Julien ;   et al. | 2020-02-13 |
Wrap-all-around contact for nanosheet-FET and method of forming same Grant 10,559,656 - Bourjot , et al. Feb | 2020-02-11 |
Fin-type Field Effect Transistors With Uniform Channel Lengths And Below-channel Isolation On Bulk Semiconductor Substrates And App 20200044069 - Frougier; Julien ;   et al. | 2020-02-06 |
Sub-thermal Switching Slope Vertical Field Effect Transistor With Dual-gate Feedback Loop Mechanism App 20200044057 - Frougier; Julien ;   et al. | 2020-02-06 |
Sub-thermal Switching Slope Vertical Field Effect Transistor With Dual-gate Feedback Loop Mechanism App 20200044058 - Frougier; Julien ;   et al. | 2020-02-06 |
Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism Grant 10,553,705 - Frougier , et al. Fe | 2020-02-04 |
Vertically Stacked Complementary-fet Device With Independent Gate Control App 20200035569 - Frougier; Julien ;   et al. | 2020-01-30 |
Nanosheet Field Effect Transistor With Spacers Between Sheets App 20200035786 - Xie; Ruilong ;   et al. | 2020-01-30 |
Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism Grant 10,546,945 - Frougier , et al. Ja | 2020-01-28 |
Steep-switch vertical field effect transistor Grant 10,541,272 - Chanemougame , et al. Ja | 2020-01-21 |
Forming self-aligned gate and source/drain contacts using sacrificial gate cap spacer and resulting devices Grant 10,529,826 - Frougier , et al. J | 2020-01-07 |
Nanosheet Fet Device With Epitaxial Nucleation App 20190386113 - Loubet; Nicolas ;   et al. | 2019-12-19 |
Vertically stacked complementary-FET device with independent gate control Grant 10,510,622 - Frougier , et al. Dec | 2019-12-17 |
Work function metal patterning for N-P space between active nanostructures Grant 10,510,620 - Chanemougame , et al. Dec | 2019-12-17 |
Forming Nanosheet Transistor With Inner Spacers At Highly Scaled Gate Pitch App 20190378915 - Frougier; Julien ;   et al. | 2019-12-12 |
Field-effect Transistors Including Multiple Gate Lengths App 20190371887 - Frougier; Julien ;   et al. | 2019-12-05 |
Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby Grant 10,475,899 - Xie , et al. Nov | 2019-11-12 |
Wrap-all-around Contact For Nanosheet-fet And Method Of Forming Same App 20190341448 - Bourjot; Emilie M.S. ;   et al. | 2019-11-07 |
Method, Apparatus, And System For Fin-over-nanosheet Complementary Field-effect-transistor App 20190326286 - Xie; Ruilong ;   et al. | 2019-10-24 |
Method of forming integrated circuit with gate-all-around field effect transistor and the resulting structure Grant 10,431,663 - Xie , et al. O | 2019-10-01 |
Forming nanosheet transistor using sacrificial spacer and inner spacers Grant 10,424,651 - Cheng , et al. Sept | 2019-09-24 |
Vertical Field Effect Transistors Incorporating U-shaped Semiconductor Bodies And Methods App 20190287863 - Xie; Ruilong ;   et al. | 2019-09-19 |
Gate-all-around Transistor With Spacer Support And Methods Of Forming Same App 20190288117 - Xie; Ruilong ;   et al. | 2019-09-19 |
Vertical field effect transistors incorporating U-shaped semiconductor bodies and methods Grant 10,418,484 - Xie , et al. Sept | 2019-09-17 |
Sub-thermal Switching Slope Vertical Field Effect Transistor With Dual-gate Feedback Loop Mechanism App 20190259857 - Frougier; Julien ;   et al. | 2019-08-22 |
Sub-thermal Switching Slope Vertical Field Effect Transistor With Dual-gate Feedback Loop Mechanism App 20190259858 - Frougier; Julien ;   et al. | 2019-08-22 |
Sub-thermal Switching Slope Vertical Field Effect Transistor With Dual-gate Feedback Loop Mechanism App 20190259856 - Frougier; Julien ;   et al. | 2019-08-22 |
Nanosheet field-effect transistors including a two-dimensional semiconducting material Grant 10,388,732 - Frougier , et al. A | 2019-08-20 |
Sub-thermal switching slope vertical field effect transistor with dual-gate feedback loop mechanism Grant 10,388,760 - Frougier , et al. A | 2019-08-20 |
Steep-switch Field Effect Transistor With Integrated Bi-stable Resistive System App 20190252507 - Frougier; Julien ;   et al. | 2019-08-15 |
Steep-switch Field Effect Transistor With Integrated Bi-stable Resistive System App 20190252508 - Frougier; Julien ;   et al. | 2019-08-15 |
Steep-switch Field Effect Transistor With Integrated Bi-stable Resistive System App 20190252465 - Frougier; Julien ;   et al. | 2019-08-15 |
Forming Nanosheet Transistor Using Sacrificial Spacer And Inner Spacers App 20190252516 - Cheng; Kangguo ;   et al. | 2019-08-15 |
Transistors with H-shaped or U-shaped channels and method for forming the same Grant 10,381,459 - Xie , et al. A | 2019-08-13 |
Forming Nanosheet Transistor Using Sacrificial Spacer And Inner Spacers App 20190237559 - Cheng; Kangguo ;   et al. | 2019-08-01 |
Transistors With H-shaped Or U-shaped Channels And Method For Forming The Same App 20190214482 - Xie; Ruilong ;   et al. | 2019-07-11 |
Method Of Forming Integrated Circuit With Gate-all-around Field Effect Transistor And The Resulting Structure App 20190214473 - Xie; Ruilong ;   et al. | 2019-07-11 |
Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming Grant 10,332,803 - Xie , et al. | 2019-06-25 |
Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same Grant 10,290,549 - Xie , et al. | 2019-05-14 |
Wrap-around contacts formed with multiple silicide layers Grant 10,276,442 - Xie , et al. | 2019-04-30 |
Method Of Forming Gate-all-around (gaa) Finfet And Gaa Finfet Formed Thereby App 20190123160 - Xie; Ruilong ;   et al. | 2019-04-25 |
Stacked nanosheet field-effect transistor with air gap spacers Grant 10,269,983 - Frougier , et al. | 2019-04-23 |
Steep-switch Vertical Field Effect Transistor App 20190109177 - Chanemougame; Daniel ;   et al. | 2019-04-11 |
Insulated epitaxial structures in nanosheet complementary field effect transistors Grant 10,256,158 - Frougier , et al. | 2019-04-09 |
Steep-switch field effect transistor with integrated bi-stable resistive system Grant 10,256,316 - Frougier , et al. | 2019-04-09 |
Complementary FETs with wrap around contacts and methods of forming same Grant 10,236,292 - Frougier , et al. | 2019-03-19 |
Methods, apparatus and system for forming wrap-around contact with dual silicide Grant 10,236,218 - Xie , et al. | 2019-03-19 |
Vertical FET with self-aligned source/drain regions and gate length based on channel epitaxial growth process Grant 10,236,379 - Bentley , et al. | 2019-03-19 |
Integrated Circuit Structure, Gate All-around Integrated Circuit Structure And Methods Of Forming Same App 20190074224 - Xie; Ruilong ;   et al. | 2019-03-07 |
Inner Spacer Formation In A Nanosheet Field-effect Transistor App 20190058052 - Frougier; Julien ;   et al. | 2019-02-21 |
Complementary FETs with wrap around contacts and method of forming same Grant 10,192,867 - Frougier , et al. Ja | 2019-01-29 |
Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive system Grant 10,170,520 - Frougier , et al. J | 2019-01-01 |
Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby Grant 10,164,041 - Xie , et al. Dec | 2018-12-25 |
Stacked Nanosheet Field-effect Transistor With Airgap Spacers App 20180331232 - Frougier; Julien ;   et al. | 2018-11-15 |
Vertical Fet With Self-aligned Source/drain Regions And Gate Length Based On Channel Epitaxial Growth Process App 20180331213 - Bentley; Steven ;   et al. | 2018-11-15 |
Inner spacer formation for nanosheet field-effect transistors with tall suspensions Grant 10,014,390 - Bouche , et al. July 3, 2 | 2018-07-03 |
Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device Grant 9,991,352 - Frougier , et al. June 5, 2 | 2018-06-05 |
Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure Grant 9,947,804 - Frougier , et al. April 17, 2 | 2018-04-17 |