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Patent applications and USPTO patent grants for Frijlink; Peter M..The latest application filed is for "method of manufacturing a semiconductor device comprising a buried channel field effect transistor".
Patent | Date |
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Method of manufacturing a semiconductor device comprising a buried channel field effect transistor Grant 5,643,807 - Frijlink , et al. July 1, 1 | 1997-07-01 |
Method for epitaxial growth from the vapor phase of semiconductor materials Grant 5,108,540 - Frijlink April 28, 1 | 1992-04-28 |
Epitaxial growth reactor provided with a planetary support Grant 4,961,399 - Frijlink October 9, 1 | 1990-10-09 |
Device comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface Grant 4,860,687 - Frijlink August 29, 1 | 1989-08-29 |
Ballistic hetero-junction transistor with transverse two dimensional electron gas layer Grant 4,758,868 - Frijlink July 19, 1 | 1988-07-19 |
Method of manufacturing a semiconductor device by vapor phase deposition using multiple inlet flow control Grant 4,748,135 - Frijlink May 31, 1 | 1988-05-31 |
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