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Transistor component having a shielding structure Grant 8,102,012 - Peters , et al. January 24, 2 | 2012-01-24 |
Lightly doped silicon carbide wafer and use thereof in high power devices Grant 8,097,524 - Ellison , et al. January 17, 2 | 2012-01-17 |
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Simplified switching circuit Grant 7,777,553 - Friedrichs August 17, 2 | 2010-08-17 |
Method for making an integrated circuit including vertical junction field effect transistors Grant 7,763,506 - Treu , et al. July 27, 2 | 2010-07-27 |
SiC-PN power diode Grant 7,646,026 - Friedrichs , et al. January 12, 2 | 2010-01-12 |
Simplified Circuit to Use a Normally Conducting Circuit Element That Requires a Normally Blocking Circuit Element App 20090251197 - Friedrichs; Peter | 2009-10-08 |
Lightly Doped Silicon Carbide Wafer And Use Thereof In High Power Devices App 20090114924 - Ellison; Alexandre ;   et al. | 2009-05-07 |
Method For Making An Integrated Circuit Including Vertical Junction Field Effect Transistors App 20090068803 - Treu; Michael ;   et al. | 2009-03-12 |
Lightly doped silicon carbide wafer and use thereof in high power devices Grant 7,482,068 - Ellison , et al. January 27, 2 | 2009-01-27 |
SiC-PN Power Diode App 20080217627 - Friedrichs; Peter ;   et al. | 2008-09-11 |
Electronic switching device Grant 7,206,178 - Friedrichs , et al. April 17, 2 | 2007-04-17 |
Electronic switching device and an operating method thereof Grant 7,082,020 - Friedrichs , et al. July 25, 2 | 2006-07-25 |
Semiconductor structure with a switch element and an edge element Grant 7,071,503 - Dohnke , et al. July 4, 2 | 2006-07-04 |
Lightly doped silicon carbide wafer and use thereof in high power devices App 20060137600 - Ellison; Alexandre ;   et al. | 2006-06-29 |
Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material Grant 6,936,850 - Friedrichs , et al. August 30, 2 | 2005-08-30 |
Semiconductor structure with a switch element and an edge element App 20050062112 - Dohnke, Karl ;   et al. | 2005-03-24 |
Switching device for switching at a high operating voltage Grant 6,822,842 - Friedrichs , et al. November 23, 2 | 2004-11-23 |
Method for contacting a semiconductor configuration Grant 6,815,351 - Friedrichs , et al. November 9, 2 | 2004-11-09 |
Electronic switching device and an operating method thereof App 20040047098 - Friedrichs, Peter ;   et al. | 2004-03-11 |
Semiconductor construction with buried island region and contact region Grant 6,693,322 - Friedrichs , et al. February 17, 2 | 2004-02-17 |
Electronic switching device App 20040027753 - Friedrichs, Peter ;   et al. | 2004-02-12 |
Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration Grant 6,667,495 - Friedrichs , et al. December 23, 2 | 2003-12-23 |
Switching device for switching at a high operating voltage App 20030168919 - Friedrichs, Peter ;   et al. | 2003-09-11 |
Method for contacting a semiconductor configuration App 20030146437 - Friedrichs, Peter ;   et al. | 2003-08-07 |
Semiconductor construction with buried island region and contact region App 20030137010 - Friedrichs, Peter ;   et al. | 2003-07-24 |
Semiconductor device made from silicon carbide with a schottky contact and an ohmic contact made from a nickel-aluminum material and process for producing the semiconductor device App 20020125482 - Friedrichs, Peter ;   et al. | 2002-09-12 |
Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure Grant 6,316,791 - Schorner , et al. November 13, 2 | 2001-11-13 |
Semiconductor configuration with an Ohmic contact-connection and method for contacting a semiconductor configuration App 20010002705 - Friedrichs, Peter ;   et al. | 2001-06-07 |
Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration App 20010001484 - Friedrichs, Peter ;   et al. | 2001-05-24 |