French; William D.

Patent Applications and Registrations

Patent applications and USPTO patent grants for French; William D..The latest application filed is for "conductor design for integrated magnetic devices".

Company Profile

1.13.13

French; William D. - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Conductor design for integrated magnetic devices Grant 11,393,787 - Lee , et al. July 19, 2	2022-07-19
Conductor Design For Integrated Magnetic Devices App 20190164934 - Lee; Dok Won ; et al.	2019-05-30
Conductor Design For Integrated Magnetic Devices App 20150340338 - Lee; Dok Won ; et al.	2015-11-26
Method Of Manufacturing A Micro-fabricated Wafer Level Integrated Inductor Or Transformer For High Frequency Switch Mode Power Supplies App 20150340422 - Lee; Dok Won ; et al.	2015-11-26
Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions Grant 8,629,027 - Bulucea , et al. January 14, 2	2014-01-14
Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket Grant 8,410,549 - Bulucea , et al. April 2, 2	2013-04-02
Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses Grant 8,377,768 - Bulucea , et al. February 19, 2	2013-02-19
Configuration and fabrication of semiconductor structure using empty and filled wells Grant 8,304,835 - Bulucea , et al. November 6, 2	2012-11-06
Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants Grant 8,304,320 - Bahl , et al. November 6, 2	2012-11-06
Structure and Fabrication of Like-polarity Field-effect Transistors Having Different Configurations of Source/Drain Extensions, Halo Pockets, and Gate Dielectric Thicknesses App 20120264263 - Bulucea; Constantin ; et al.	2012-10-18
Configuration and Fabrication of Semiconductor Structure in Which Source and Drain Extensions of Field-effect Transistor Are Defined with Different Dopants App 20120184077 - Bahl; Sandeep R. ; et al.	2012-07-19
Fabrication of asymmetric field-effect transistors using L-shaped spacers Grant 8,101,479 - Parker , et al. January 24, 2	2012-01-24
Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses Grant 8,084,827 - Bulucea , et al. December 27, 2	2011-12-27
Semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants Grant 7,973,372 - Bahl , et al. July 5, 2	2011-07-05
Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions Grant 7,968,921 - Bulucea , et al. June 28, 2	2011-06-28
Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions App 20100244131 - Bulucea; Constantin ; et al.	2010-09-30
Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants App 20100244150 - Bahl; Sandeep R. ; et al.	2010-09-30
Configuration and fabrication of semiconductor structure using empty and filled wells App 20100244128 - Bulucea; Constantin ; et al.	2010-09-30
Fabrication and structure of asymmetric field-effect transistors using L-shaped spacers App 20100244106 - Parker; D. Courtney ; et al.	2010-09-30
Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket App 20100244130 - Bulucea; Constantin ; et al.	2010-09-30
Configuration and fabrication of semiconductor structure having extended-drain field-effect transistor App 20100244152 - Bahl; Sandeep R. ; et al.	2010-09-30
Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses App 20100244149 - Bulucea; Constantin ; et al.	2010-09-30
Structure and fabrication of field-effect transistor having source/drain extension defined by multiple local concentration maxima App 20100244151 - French; William D. ; et al.	2010-09-30

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