French; Marc C.

Patent Applications and Registrations

Patent applications and USPTO patent grants for French; Marc C..The latest application filed is for "fabrication of non-planar igzo devices for improved electrostatics".

Company Profile

5.12.14

French; Marc C. - Forest Grove OR
French; Marc C. - Hillsboro OR US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Engineering tensile strain buffer in art for high quality Ge channel Grant 11,450,527 - Le , et al. September 20, 2	2022-09-20
Fabrication Of Non-planar Igzo Devices For Improved Electrostatics App 20210050455 - LE; Van H. ; et al.	2021-02-18
Fabrication of non-planar IGZO devices for improved electrostatics Grant 10,847,656 - Le , et al. November 24, 2	2020-11-24
Engineering Tensile Strain Buffer In Art For High Quality Ge Channel App 20200066515 - LE; Van H. ; et al.	2020-02-27
Offstate parasitic leakage reduction for tunneling field effect transistors Grant 10,249,742 - Le , et al.	2019-04-02
Transistor Gate-channel Arrangements App 20190058043 - Dewey; Gilbert W. ; et al.	2019-02-21
Fabrication Of Non-planar Igzo Devices For Improved Electrostatics App 20180366587 - LE; Van H. ; et al.	2018-12-20
Semiconductor devices with germanium-rich active layers and doped transition layers Grant 10,008,565 - Rachmady , et al. June 26, 2	2018-06-26
Offstate Parasitic Leakage Reduction For Tunneling Field Effect Transistors App 20180158933 - LE; Van H. ; et al.	2018-06-07
Uniform Layers Formed with Aspect Ratio Trench Based Processes App 20170317187 - GARDNER; Sanaz K. ; et al.	2017-11-02
Semiconductor Devices With Germanium-rich Active Layers And Doped Transition Layers App 20170288019 - RACHMADY; Willy ; et al.	2017-10-05
Semiconductor devices with germanium-rich active layers and doped transition layers Grant 9,691,848 - Rachmady , et al. June 27, 2	2017-06-27
Semiconductor Devices With Germanium-rich Active Layers And Doped Transition Layers App 20170047401 - Rachmady; Willy ; et al.	2017-02-16
Semiconductor devices with germanium-rich active layers and doped transition layers Grant 9,490,329 - Rachmady , et al. November 8, 2	2016-11-08
Semiconductor devices with germanium-rich active layers & doped transition layers App 20160049476 - Rachmady; Willy ; et al.	2016-02-18
Semiconductor devices with germanium-rich active layers and doped transition layers Grant 9,159,787 - Rachmady , et al. October 13, 2	2015-10-13
Semiconductor Devices With Germanium-rich Active Layers And Doped Transition Layers App 20140291772 - RACHMADY; Willy ; et al.	2014-10-02
Epitaxial film growth on patterned substrate Grant 8,785,907 - Goel , et al. July 22, 2	2014-07-22
Semiconductor Devices With Germanium-rich Active Layers & Doped Transition Layers App 20140167108 - RACHMADY; Willy ; et al.	2014-06-19
Semiconductor devices with germanium-rich active layers and doped transition layers Grant 8,748,940 - Rachmady , et al. June 10, 2	2014-06-10
Soft magnetic layer for on-die inductively coupled wires with high electrical resistance App 20080157911 - Fajardo; Arnel M. ; et al.	2008-07-03

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