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Patent applications and USPTO patent grants for Freeman; Gregory Gower.The latest application filed is for "bipolar transistor structure and methods using shallow isolation extension to reduce parasitic capacitance".
Patent | Date |
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Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance Grant 6,864,560 - Khater , et al. March 8, 2 | 2005-03-08 |
Method of fabricating a polysilicon capacitor utilizing fet and bipolar base polysilicon layers Grant 6,800,921 - Coolbaugh , et al. October 5, 2 | 2004-10-05 |
Bipolar Transistor Structure And Methods Using Shallow Isolation Extension To Reduce Parasitic Capacitance App 20040188797 - Khater, Marwan H. ;   et al. | 2004-09-30 |
Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layers Grant 6,670,228 - Coolbaugh , et al. December 30, 2 | 2003-12-30 |
Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layers App 20030141534 - Coolbaugh, Douglas Duane ;   et al. | 2003-07-31 |
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