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name:-0.010799884796143
name:-0.010467052459717
name:-0.00050616264343262
Freeman; Diane C. Patent Filings

Freeman; Diane C.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Freeman; Diane C..The latest application filed is for "aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors".

Company Profile
0.18.20
  • Freeman; Diane C. - Pittsford NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Process for atomic layer deposition
Grant 8,207,063 - Cowdery-Corvan , et al. June 26, 2
2012-06-26
Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors
Grant 8,187,915 - Zheng , et al. May 29, 2
2012-05-29
Colored mask combined with selective area deposition
Grant 8,129,098 - Irving , et al. March 6, 2
2012-03-06
Process for selective area deposition of inorganic materials
Grant 8,030,212 - Yang , et al. October 4, 2
2011-10-04
Organosiloxane materials for selective area deposition of inorganic materials
Grant 8,017,183 - Yang , et al. September 13, 2
2011-09-13
N,N'-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
Grant 7,981,719 - Shukla , et al. July 19, 2
2011-07-19
Process for making doped zinc oxide
Grant 7,972,898 - Cowdery-Corvan , et al. July 5, 2
2011-07-05
Process for depositing organic materials
Grant 7,858,144 - Freeman , et al. December 28, 2
2010-12-28
Process for atomic layer deposition
Grant 7,851,380 - Nelson , et al. December 14, 2
2010-12-14
Photopatternable deposition inhibitor containing siloxane
Grant 7,846,644 - Irving , et al. December 7, 2
2010-12-07
N-type semiconductor materials for thin film transistors
Grant 7,807,994 - Shukla , et al. October 5, 2
2010-10-05
Aryl Dicarboxylic Acid Diimidazole-based Compounds As N-type Semiconductor Materials For Thin Film Transistors
App 20100178728 - Zheng; Shiying ;   et al.
2010-07-15
Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors
Grant 7,745,821 - Zheng , et al. June 29, 2
2010-06-29
N-type Semiconductor Materials For Thin Film Transistors
App 20090312553 - Shukla; Deepak ;   et al.
2009-12-17
N-type semiconductor materials for thin film transistors
Grant 7,629,605 - Shukla , et al. December 8, 2
2009-12-08
N,n'-di(arylalkyl)-substituted Naphthalene-based Tetracarboxylic Diimide Compounds As N-type Semiconductor Materials For Thin Film Transistors
App 20090261323 - Shukla; Deepak ;   et al.
2009-10-22
N,N'-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
Grant 7,579,619 - Shukla , et al. August 25, 2
2009-08-25
Photopatternable Deposition Inhibitor Containing Siloxane
App 20090130608 - Irving; Lyn M. ;   et al.
2009-05-21
Colored mask combined with selective area deposition
App 20090130609 - Irving; Lyn M. ;   et al.
2009-05-21
Process For Selective Area Deposition Of Inorganic Materials
App 20090081827 - Yang; Cheng ;   et al.
2009-03-26
Process For Atomic Layer Deposition
App 20090081842 - Nelson; Shelby F. ;   et al.
2009-03-26
Process For Depositing Organic Materials
App 20090081883 - Freeman; Diane C. ;   et al.
2009-03-26
Organosiloxane Materials For Selective Area Deposition Of Inorganic Materials
App 20090081374 - Yang; Cheng ;   et al.
2009-03-26
Process For Making Doped Zinc Oxide
App 20090081826 - Cowdery-Corvan; Peter J. ;   et al.
2009-03-26
Fused-fluorene-containing Materials As Semiconductor Materials For Thin Film Transistors
App 20080283827 - Zheng; Shiying ;   et al.
2008-11-20
Aryl Dicarboxylic Acid Diimidazole-based Compounds As N-type Semiconductor Materials For Thin Film Transistors
App 20080283826 - Zheng; Shiying ;   et al.
2008-11-20
N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
Grant 7,422,777 - Shukla , et al. September 9, 2
2008-09-09
Process For Atomic Layer Deposition
App 20080182358 - Cowdery-Corvan; Peter J. ;   et al.
2008-07-31
Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
Grant 7,326,956 - Shukla , et al. February 5, 2
2008-02-05
N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
App 20070116895 - Shukla; Deepak ;   et al.
2007-05-24
N-type semiconductor materials for thin film transistors
App 20070096084 - Shukla; Deepak ;   et al.
2007-05-03
N,N'-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
Grant 7,198,977 - Shukla , et al. April 3, 2
2007-04-03
N,N'-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
App 20060237712 - Shukla; Deepak ;   et al.
2006-10-26
Polymeric gate dielectrics for organic thin film transistors and methods of making the same
App 20060214154 - Yang; Zhihao ;   et al.
2006-09-28
Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
App 20060131564 - Shukla; Deepak ;   et al.
2006-06-22
N,N'-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
App 20060134823 - Shukla; Deepak ;   et al.
2006-06-22
Digital printing method with reduced visible banding
App 20040008234 - Grady, Barbara L. ;   et al.
2004-01-15
Apparatus and method for maintaining a substantially constant closely spaced working distance between an inkjet printhead and a printing receiver
Grant 6,561,607 - Lubinsky , et al. May 13, 2
2003-05-13

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