Force-MOS Technology Corporation

Patent Applications and Registrations

Patent applications and USPTO patent grants for Force-MOS Technology Corporation.The latest application filed is for "insulated gate bipolar transistor (igbt) with monolithic deep body clamp diode to prevent latch-up".

Company Profile

0.15.19

Force-MOS Technology Corporation - Hsinchu TW
Force-MOS Technology Corporation - British West Indies KY
Force--Mos Technology Corporation - KY KY
Force-MOS Technology Corporation - TW TW
Force-MOS Technology Corp. - KY KY
Force-Mos Technology Corp - KY KY
Force-MOS Technology Corp. - TW TW
Force-MOS Technology Corporation -
Force-MOS Technology Corporation - Xu Hui District Shanghai CN
Force-MOS Technology Corporation - Grand Cayman KY
FORCE-MOS TECHNOLOGY CORPORATION - Shanghai CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Methods for manufacturing trench MOSFET with implanted drift region Grant 8,461,001 - Hshieh June 11, 2	2013-06-11
Trenched MOSFETS with improved gate-drain (GD) clamp diodes Grant 8,389,354 - Hshieh March 5, 2	2013-03-05
Method of manufacturing trenched MOSFETs with embedded Schottky in the same cell Grant 8,252,645 - Hshieh August 28, 2	2012-08-28
Trench MOSFET with double epitaxial structure Grant 8,159,021 - Hshieh April 17, 2	2012-04-17
Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up Grant 8,058,670 - Hshieh November 15, 2	2011-11-15
Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures Grant 8,022,471 - Hshieh September 20, 2	2011-09-20
Configuration of trenched semiconductor power device to reduce masked process Grant 7,960,787 - Hshieh June 14, 2	2011-06-14
Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications Grant 7,929,321 - Hshieh April 19, 2	2011-04-19
Trench MOSFET with embedded junction barrier Schottky diode Grant 7,863,685 - Hshieh January 4, 2	2011-01-04
Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up App 20100308370 - Hshieh; Fwu-Iuan	2010-12-09
Trench MOSFET with cell layout, ruggedness, truncated corners Grant 7,812,409 - Hshieh October 12, 2	2010-10-12
Closed trench MOSFET with floating trench rings as termination Grant 7,800,185 - Hshieh September 21, 2	2010-09-21
Trench insulated gate bipolar transistor (GBT) with improved emitter-base contacts and metal schemes App 20100193835 - Hshieh; Fwu-Iuan	2010-08-05
Trench MOSFET with trench termination and manufacture thereof Grant 7,750,398 - Hshieh July 6, 2	2010-07-06
Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures App 20100163975 - Hshieh; Fwu-Iuan	2010-07-01
Configuration of trenched semiconductor power device to reduce masked process App 20100117145 - Hshieh; Fwa-Iuan	2010-05-13
Methods for manufacturing trench MOSFET with implanted drift region App 20100087039 - Hshieh; Fwu-Iuan	2010-04-08
Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications App 20100044796 - Hshieh; Fwu-Iuan	2010-02-25
Device configuration and method to manufacture trench MOSFET with solderable front metal Grant 7,646,058 - Hshieh January 12, 2	2010-01-12
Trench MOSFET with implanted drift region Grant 7,633,121 - Hshieh December 15, 2	2009-12-15
Method of Manufacturing Trenched Mosfets with Embedded Schottky in the Same Cell App 20090305475 - Hshieh; Fwu-ruan	2009-12-10
Trench MOSFET with embedded junction barrier Schottky diode App 20090294859 - Hshieh; Fwu-Iuan	2009-12-03
Trenched mosfets with improved gate-drain (GD) clamp diodes App 20090219657 - Hshieh; Fwu-Iuan	2009-09-03
Trench mosfet with double epitaxial structure App 20090206395 - Hshieh; Fwu-Iuan	2009-08-20
Trench MOSFET with implanted drift region App 20090108338 - Hshieh; Fwu-Iuan	2009-04-30
Trench MOSFET with thick bottom oxide tub App 20090085107 - Hshieh; Fwu-Iuan	2009-04-02
Trenched MOSFETs with improved gate-drain (GD) clamp diodes Grant 7,511,357 - Hshieh March 31, 2	2009-03-31
Trench MOSFET with Trench Termination and manufacture thereof App 20090057756 - Hshieh; Fwu-Iuan	2009-03-05
Trench MOSFET with multiple P-bodies for ruggedness and on-resistance improvements App 20090026533 - Hshieh; Fwu-Iuan	2009-01-29
Device configuration and method to manufacture trench mosfet with solderable front metal App 20080303081 - Hshieh; Fwu-Iuan	2008-12-11
Trenched MOSFETs with improved gate-drain (GD) clamp diodes App 20080258224 - Hshieh; Fwu-Iuan	2008-10-23
Trenched mosfets with embedded schottky in the same cell App 20080246082 - Hshieh; Fwu-Iuan	2008-10-09
Closed trench MOSFET with floating trench rings as termination App 20080179662 - Hshieh; Fwu-Iuan	2008-07-31
Trench MOSFET with cell layout to improve ruggedness App 20080128829 - Hshieh; Fwu-Iuan	2008-06-05

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