Foisy; Mark C.
Patent Applications and Registrations
Patent applications and USPTO patent grants for Foisy; Mark C..The latest application filed is for "transistor with differently doped strained current electrode region".
- Foisy; Mark C. - Austin TX
| Patent | Date |
|---|---|
| Transistor with differently doped strained current electrode region Grant 7,687,337 - Zhang , et al. March 30, 2 | 2010-03-30 |
| Transistor With Differently Doped Strained Current Electrode Region App 20090020783 - Zhang; Da ; et al. | 2009-01-22 |
| Semiconductor process for forming stress absorbent shallow trench isolation structures Grant 7,442,621 - Orlowski , et al. October 28, 2 | 2008-10-28 |
| Method of forming device having a raised extension region Grant 7,344,933 - Goktepeli , et al. March 18, 2 | 2008-03-18 |
| Method of forming device having a raised extension region App 20070155073 - Goktepeli; Sinan ; et al. | 2007-07-05 |
| Semiconductor Device With Multiple Semiconductor Layers App 20060194384 - Venkatesan; Suresh ; et al. | 2006-08-31 |
| Semiconductor process for forming stress absorbent shallow trench isolation structures App 20060110892 - Orlowski; Marius K. ; et al. | 2006-05-25 |
| Semiconductor device with multiple semiconductor layers App 20050275018 - Venkatesan, Suresh ; et al. | 2005-12-15 |
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