Flynn; Jeffrey S.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Flynn; Jeffrey S..The latest application filed is for "high voltage switching devices and process for forming same".

Company Profile

0.17.14

Flynn; Jeffrey S. - Wake Forest NC
Flynn; Jeffrey S. - Litchfield CT
Flynn; Jeffrey S. - Raleigh NC
Flynn; Jeffrey S. - Wolcott CT

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
High voltage switching devices and process for forming same Grant 8,698,286 - Flynn , et al. April 15, 2	2014-04-15
High Voltage Switching Devices And Process For Forming Same App 20130193444 - Flynn; Jeffrey S. ; et al.	2013-08-01
High voltage switching devices and process for forming same Grant 8,390,101 - Flynn , et al. March 5, 2	2013-03-05
High Voltage Switching Devices And Process For Forming Same App 20120181547 - Flynn; Jeffrey S. ; et al.	2012-07-19
III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates Grant 8,212,259 - Flynn , et al. July 3, 2	2012-07-03
High voltage switching devices and process for forming same Grant 8,174,089 - Flynn , et al. May 8, 2	2012-05-08
Vicinal gallium nitride substrate for high quality homoepitaxy Grant 8,043,731 - Xu , et al. October 25, 2	2011-10-25
Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same Grant 7,919,791 - Flynn , et al. April 5, 2	2011-04-05
III-V nitride substrate boule and method of making and using the same Grant 7,915,152 - Vaudo , et al. March 29, 2	2011-03-29
High Voltage Switching Devices And Process For Forming Same App 20100301351 - Flynn; Jeffrey S. ; et al.	2010-12-02
Iii-v Nitride Substrate Boule And Method Of Making And Using The Same App 20100289122 - Vaudo; Robert P. ; et al.	2010-11-18
High voltage switching devices and process for forming same Grant 7,795,707 - Flynn , et al. September 14, 2	2010-09-14
Vicinal Gallium Nitride Substrate For High Quality Homoepitaxy App 20100148320 - Xu; Xueping ; et al.	2010-06-17
Vicinal gallium nitride substrate for high quality homoepitaxy Grant 7,700,203 - Xu , et al. April 20, 2	2010-04-20
III-V nitride substrate boule and method of making and using the same Grant 7,655,197 - Vaudo , et al. February 2, 2	2010-02-02
Vicinal Gallium Nitride Substrate For High Quality Homoepitaxy App 20080199649 - Xu; Xueping ; et al.	2008-08-21
Vicinal gallium nitride substrate for high quality homoepitaxy Grant 7,390,581 - Xu , et al. June 24, 2	2008-06-24
III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier Grant 7,282,744 - Flynn , et al. October 16, 2	2007-10-16
High electron mobility electronic device structures comprising native substrates and methods for making the same App 20070018198 - Brandes; George R. ; et al.	2007-01-25
Vicinal gallium nitride substrate for high quality homoepitaxy App 20060228584 - Xu; Xueping ; et al.	2006-10-12
Vicinal gallium nitride substrate for high quality homoepitaxy Grant 7,118,813 - Xu , et al. October 10, 2	2006-10-10
High voltage switching devices and process for forming same App 20050167697 - Flynn, Jeffrey S. ; et al.	2005-08-04
Vicinal gallium nitride substrate for high quality homoepitaxy App 20050104162 - Xu, Xueping ; et al.	2005-05-19
III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier App 20040222431 - Flynn, Jeffrey S. ; et al.	2004-11-11
III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same App 20030213964 - Flynn, Jeffrey S. ; et al.	2003-11-20
Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same App 20030178633 - Flynn, Jeffrey S. ; et al.	2003-09-25
III-V nitride substrate boule and method of making and using the same App 20030157376 - Vaudo, Robert P. ; et al.	2003-08-21
III-V nitride substrate boule and method of making and using the same Grant 6,596,079 - Vaudo , et al. July 22, 2	2003-07-22
GaN-based devices using thick (Ga, Al, In)N base layers Grant 6,533,874 - Vaudo , et al. March 18, 2	2003-03-18
Method For Achieving Improved Epitaxy Quality (surface Texture And Defect Density) On Free-standing (aluminum, Indium, Gallium) Nitride ((al,in,ga)n) Substrates For Opto-electronic And Electronic Devices Grant 6,447,604 - Flynn , et al. September 10, 2	2002-09-10

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