| Patent | Date |
|---|
Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devices
Grant 8,623,742 - Kronholz , et al. January 7, 2 | 2014-01-07 |
Methods for fabricating integrated circuits using non-oxidizing resist removal
Grant 8,586,440 - Flachowsky , et al. November 19, 2 | 2013-11-19 |
Technique for enhancing transistor performance by transistor specific contact design
Grant 8,541,885 - Gerhardt , et al. September 24, 2 | 2013-09-24 |
Methods For Fabricating Integrated Circuits Using Non-oxidizing Resist Removal
App 20130029464 - Flachowsky; Stefan ; et al. | 2013-01-31 |
Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes
Grant 8,338,885 - Hoentschel , et al. December 25, 2 | 2012-12-25 |
Enhancing transistor characteristics by a late deep implantation in combination with a diffusion-free anneal process
Grant 8,288,256 - Feudel , et al. October 16, 2 | 2012-10-16 |
Technique For Enhancing Dopant Profile And Channel Conductivity By Millisecond Anneal Processes
App 20120146155 - Hoentschel; Jan ; et al. | 2012-06-14 |
Reducing transistor junction capacitance by recessing drain and source regions
Grant 8,183,605 - Feudel , et al. May 22, 2 | 2012-05-22 |
Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes
Grant 8,143,133 - Hoentschel , et al. March 27, 2 | 2012-03-27 |
Reduced STI Loss for Superior Surface Planarity of Embedded Stressors in Densely Packed Semiconductor Devices
App 20110269293 - Kronholz; Stephan ; et al. | 2011-11-03 |
Technique for Enhancing Transistor Performance by Transistor Specific Contact Design
App 20110215415 - Gerhardt; Martin ; et al. | 2011-09-08 |
Technique for enhancing transistor performance by transistor specific contact design
Grant 7,964,970 - Gerhardt , et al. June 21, 2 | 2011-06-21 |
Method for manufacturing semiconductor device comprising SOI transistors and bulk transistors
Grant 7,955,937 - Wieczorek , et al. June 7, 2 | 2011-06-07 |
Technique For Enhancing Dopant Profile And Channel Conductivity By Millisecond Anneal Processes
App 20110121398 - Hoentschel; Jan ; et al. | 2011-05-26 |
Method of forming a semiconductor structure comprising an implantation of ions of a non-doping element
Grant 7,816,199 - Feudel , et al. October 19, 2 | 2010-10-19 |
Reducing Transistor Junction Capacitance By Recessing Drain And Source Regions
App 20100237431 - Feudel; Thomas ; et al. | 2010-09-23 |
Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor
Grant 7,799,682 - Beyer , et al. September 21, 2 | 2010-09-21 |
Reducing transistor junction capacitance by recessing drain and source regions
Grant 7,754,556 - Feudel , et al. July 13, 2 | 2010-07-13 |
Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques
Grant 7,745,334 - Press , et al. June 29, 2 | 2010-06-29 |
Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device
Grant 7,625,802 - Feudel , et al. December 1, 2 | 2009-12-01 |
Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor
Grant 7,494,872 - Wieczorek , et al. February 24, 2 | 2009-02-24 |
Method Of Forming A Semiconductor Structure Comprising An Implantation Of Ions Of A Non-doping Element
App 20090035924 - Feudel; Thomas ; et al. | 2009-02-05 |
Reducing Transistor Junction Capacitance By Recessing Drain And Source Regions
App 20090001484 - Feudel; Thomas ; et al. | 2009-01-01 |
Method Of Forming A Semiconductor Structure Comprising An Implantation Of Ions In A Material Layer To Be Etched
App 20080299733 - Press; Patrick ; et al. | 2008-12-04 |
Technique For Enhancing Transistor Performance By Transistor Specific Contact Design
App 20080265330 - Gerhardt; Martin ; et al. | 2008-10-30 |
Enhancing Transistor Characteristics By A Late Deep Implantation In Combination With A Diffusion-free Anneal Process
App 20080268625 - Feudel; Thomas ; et al. | 2008-10-30 |
Technique For Enhancing Dopant Activation By Using Multiple Sequential Advanced Laser/flash Anneal Processes
App 20080268597 - Wei; Andy ; et al. | 2008-10-30 |
CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structure
Grant 7,419,867 - Wieczorek , et al. September 2, 2 | 2008-09-02 |
Technique For Locally Adapting Transistor Characteristics By Using Advanced Laser/flash Anneal Techniques
App 20080081471 - Press; Patrick ; et al. | 2008-04-03 |
Transistor Having A Locally Provided Metal Silicide Region In Contact Areas And A Method Of Forming The Transistor
App 20080054371 - Beyer; Sven ; et al. | 2008-03-06 |
Method of depositing a layer of a material on a substrate
Grant 7,338,872 - Schwan , et al. March 4, 2 | 2008-03-04 |
Method Of Increasing Transistor Performance By Dopant Activation After Silicidation
App 20070281472 - Press; Patrick ; et al. | 2007-12-06 |
Semiconductor Device Comprising Soi Transistors And Bulk Transistors And A Method Of Forming The Same
App 20070228377 - Wieczorek; Karsten ; et al. | 2007-10-04 |
Method For Forming Ultra-shallow High Quality Junctions By A Combination Of Solid Phase Epitaxy And Laser Annealing
App 20070232033 - Wieczorek; Karsten ; et al. | 2007-10-04 |
Transistor having an asymmetric source/drain and halo implantation region and a method of forming the same
Grant 7,208,397 - Feudel , et al. April 24, 2 | 2007-04-24 |
CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structure
App 20060094183 - Wieczorek; Karsten ; et al. | 2006-05-04 |
Transistor having an asymmetric source/drain and halo implantation region and a method of forming the same
App 20060043430 - Feudel; Thomas ; et al. | 2006-03-02 |
Method of depositing a layer of a material on a substrate
App 20050170660 - Schwan, Christoph ; et al. | 2005-08-04 |
Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device
Grant 6,924,216 - Feudel , et al. August 2, 2 | 2005-08-02 |
Diode structure for SOI circuits
Grant 6,905,924 - Burbach , et al. June 14, 2 | 2005-06-14 |
Methods of forming a transistor having a recessed gate electrode structure
Grant 6,897,114 - Krueger , et al. May 24, 2 | 2005-05-24 |
Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers
App 20050098818 - Feudel, Thomas ; et al. | 2005-05-12 |
Technique for adjusting a penetration depth during the implantation of ions into a semiconductor region
App 20050048679 - Krueger, Christian ; et al. | 2005-03-03 |
Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor
App 20050023611 - Wieczorek, Karsten ; et al. | 2005-02-03 |
Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer
Grant 6,849,516 - Feudel , et al. February 1, 2 | 2005-02-01 |
Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device
Grant 6,846,708 - Feudel , et al. January 25, 2 | 2005-01-25 |
Method of assessing lateral dopant and/or charge carrier profiles
Grant 6,822,430 - Feudel , et al. November 23, 2 | 2004-11-23 |
Method of forming a metal silicide gate in a standard MOS process sequence
Grant 6,821,887 - Wieczorek , et al. November 23, 2 | 2004-11-23 |
Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit area
Grant 6,821,840 - Wieczorek , et al. November 23, 2 | 2004-11-23 |
Semiconductor device having an improved strained surface layer and method of forming a strained surface layer in a semiconductor device
Grant 6,808,970 - Feudel , et al. October 26, 2 | 2004-10-26 |
Method of manufacturing a field effect transistor
Grant 6,806,153 - Wieczorek , et al. October 19, 2 | 2004-10-19 |
Diode structure for SOI circuits
App 20040188768 - Burbach, Gert ; et al. | 2004-09-30 |
Method of assessing lateral dopant and/or charge carrier profiles
App 20040152222 - Feudel, Thomas ; et al. | 2004-08-05 |
Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device
App 20040137687 - Feudel, Thomas ; et al. | 2004-07-15 |
Advanced recessed gate transistor and a method of forming the same
App 20040126965 - Krueger, Christian ; et al. | 2004-07-01 |
Semiconductor device having an improved strained surface layer and method of forming a strained surface layer in a semiconductor device
App 20040126998 - Feudel, Thomas ; et al. | 2004-07-01 |
Method of manufacturing a field effect transistor
App 20040121565 - Wieczorek, Karsten ; et al. | 2004-06-24 |
Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers
App 20040104442 - Feudel, Thomas ; et al. | 2004-06-03 |
Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device
App 20040087120 - Feudel, Thomas ; et al. | 2004-05-06 |
Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor device
App 20040063262 - Feudel, Thomas ; et al. | 2004-04-01 |
Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit area
App 20040043558 - Wieczorek, Karsten ; et al. | 2004-03-04 |
Method of forming a metal silicide gate in a standard MOS process sequence
App 20040038435 - Wieczorek, Karsten ; et al. | 2004-02-26 |
Method Of Forming Lightly Doped Regions In A Semiconductor Device
App 20020061626 - Feudel, Thomas ; et al. | 2002-05-23 |
Method of controlling a shape of an oxide layer formed on a substrate
App 20020048970 - Feudel, Thomas ; et al. | 2002-04-25 |
| 