| Patent | Date |
|---|
Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits
Grant 11,437,379 - Song , et al. September 6, 2 | 2022-09-06 |
Field effect transistor (FET) comprising inner spacers and voids between channels
Grant 11,411,092 - Bao , et al. August 9, 2 | 2022-08-09 |
Optimized contact structure
Grant 11,387,335 - Bao , et al. July 12, 2 | 2022-07-12 |
Semiconductor device with superlattice fin
Grant 11,380,685 - Bao , et al. July 5, 2 | 2022-07-05 |
Optimized Contact Structure
App 20220109053 - BAO; Junjing ; et al. | 2022-04-07 |
Semiconductor Device With Superlattice Fin
App 20220108983 - BAO; Junjing ; et al. | 2022-04-07 |
Field-effect Transistors (fet) Circuits Employing Topside And Backside Contacts For Topside And Backside Routing Of Fet Power And Logic Signals, And Related Complementary Metal Oxide Semiconductor (cmos) Circuits
App 20220093594 - SONG; Stanley Seungchul ; et al. | 2022-03-24 |
Gate-all-around (GAA) transistors with additional bottom channel for reduced parasitic capacitance and methods of fabrication
Grant 11,257,917 - Yuan , et al. February 22, 2 | 2022-02-22 |
Gate-all-around (gaa) Transistors With Shallow Source/drain Regions And Methods Of Fabricating The Same
App 20220037493 - Feng; Peijie ; et al. | 2022-02-03 |
Gate-all-around (gaa) Transistors With Additional Bottom Channel For Reduced Parasitic Capacitance And Methods Of Fabrication
App 20210384310 - Yuan; Jun ; et al. | 2021-12-09 |
Gate-all-around devices with reduced parasitic capacitance
Grant 11,189,617 - Feng , et al. November 30, 2 | 2021-11-30 |
Field Effect Transistor (fet) Comprising Inner Spacers And Voids Between Channels
App 20210351276 - BAO; Junjing ; et al. | 2021-11-11 |
MULTI-GATE HIGH ELECTRON MOBILITY TRANSISTORS (HEMTs) EMPLOYING TUNED RECESS DEPTH GATES FOR IMPROVED DEVICE LINEARITY
App 20210320197 - Tang; Chenjie ; et al. | 2021-10-14 |
Via Zero Interconnect Layer Metal Resistor Integration
App 20210305155 - BAO; Junjing ; et al. | 2021-09-30 |
Flexible Gaa Nanosheet Height And Channel Materials
App 20210233909 - BAO; Junjing ; et al. | 2021-07-29 |
Gate-all-around Devices With Reduced Parasitic Capacitance
App 20210233911 - FENG; Peijie ; et al. | 2021-07-29 |
Integrated Device Comprising A Cmos Structure Comprising Well-less Transistors
App 20210057410 - SONG; Stanley Seungchul ; et al. | 2021-02-25 |
Low Parasitic Middle-of-line Scheme
App 20210028115 - BAO; Junjing ; et al. | 2021-01-28 |
Circuits Having A Diffusion Break With Avoided Or Reduced Adjacent Semiconductor Channel Strain Relaxation, And Related Methods
App 20200303550 - Song; Stanley Seungchul ; et al. | 2020-09-24 |
Circuits having a diffusion break with avoided or reduced adjacent semiconductor channel strain relaxation, and related methods
Grant 10,763,364 - Song , et al. Sep | 2020-09-01 |
Gaps In Transistor Gate Metal
App 20200234999 - LU; Ye ; et al. | 2020-07-23 |
Circuits having a diffusion break with avoided or reduced adjacent semiconductor channel strain relaxation, and related methods
Grant 10,700,204 - Song , et al. | 2020-06-30 |
Finger metal-oxide-metal (FMOM) capacitor
Grant 10,686,031 - Feng , et al. | 2020-06-16 |
High Performance Thin Film Transistor With Negative Index Material
App 20200066858 - BAO; Junjing ; et al. | 2020-02-27 |
Circuits Having A Diffusion Break With Avoided Or Reduced Adjacent Semiconductor Channel Strain Relaxation, And Related Methods
App 20200058792 - Song; Stanley Seungchul ; et al. | 2020-02-20 |
Finger Metal-oxide-metal (fmom) Capacitor
App 20190305077 - FENG; Peijie ; et al. | 2019-10-03 |
NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (FETs) (MOSFETs) EMPLOYING A NANOWIRE CHANNEL STRUCTURE EMPLOYING RECESSED CONDUCTIVE STRUCTURES FOR CONDUCTIVELY COUPLING NANOWIRE STRUCTURES
App 20170207313 - Song; Stanley Seungchul ; et al. | 2017-07-20 |
NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (FETs) (MOSFETs) EMPLOYING A NANOWIRE CHANNEL STRUCTURE HAVING ROUNDED NANOWIRE STRUCTURES
App 20170170268 - Song; Stanley Seungchul ; et al. | 2017-06-15 |
FinFET conformal junction and high epi surface dopant concentration method and device
Grant 9,577,040 - Feng , et al. February 21, 2 | 2017-02-21 |
FinFET conformal junction and abrupt junction with reduced damage method and device
Grant 9,559,176 - Feng , et al. January 31, 2 | 2017-01-31 |
Finfet Conformal Junction And High Epi Surface Dopant Concentration Method And Device
App 20160308005 - FENG; Peijie ; et al. | 2016-10-20 |
Finfet Conformal Junction And Abrupt Junction With Reduced Damage Method And Device
App 20160293718 - FENG; Peijie ; et al. | 2016-10-06 |
FinFET conformal junction and high EPI surface dopant concentration method and device
Grant 9,406,752 - Feng , et al. August 2, 2 | 2016-08-02 |
FinFET conformal junction and abrupt junction with reduced damage method and device
Grant 9,397,162 - Feng , et al. July 19, 2 | 2016-07-19 |
Finfet Conformal Junction And High Epi Surface Dopant Concentration Method And Device
App 20160190251 - FENG; Peijie ; et al. | 2016-06-30 |
Finfet Conformal Junction And Abrupt Junction With Reduced Damage Method And Device
App 20160190252 - FENG; Peijie ; et al. | 2016-06-30 |
High electron mobility transistor with multiple channels
Grant 8,907,378 - Teo , et al. December 9, 2 | 2014-12-09 |
High Electron Mobility Transistor with Multiple Channels
App 20140266324 - Teo; Koon Hoo ; et al. | 2014-09-18 |
High electron mobility transistors with multiple channels
Grant 8,624,667 - Teo , et al. January 7, 2 | 2014-01-07 |
High Electron Mobility Transistors with Multiple Channels
App 20130141156 - Teo; Koon Hoo ; et al. | 2013-06-06 |
| 