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name:-0.0095129013061523
name:-0.00079798698425293
Feng; Bai-Cwo Patent Filings

Feng; Bai-Cwo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Feng; Bai-Cwo.The latest application filed is for "multi-layer package incorporating a recessed cavity for a semiconductor chip".

Company Profile
0.9.0
  • Feng; Bai-Cwo - Tarrytown NY
  • Feng; Bai-Cwo - Wappingers Falls NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Multi-layer package incorporating a recessed cavity for a semiconductor chip
Grant 5,081,563 - Feng , et al. January 14, 1
1992-01-14
Two layer resist system
Grant 4,238,559 - Feng , et al. December 9, 1
1980-12-09
Two layer resist system
Grant 4,204,009 - Feng , et al. May 20, 1
1980-05-20
Two layer resist system
Grant 4,180,604 - Feng , et al. December 25, 1
1979-12-25
Method of manufacturing self-aligned semiconductor devices
Grant 4,131,497 - Feng , et al. December 26, 1
1978-12-26
Planarization of integrated circuit surfaces through selective photoresist masking
Grant 4,038,110 - Feng July 26, 1
1977-07-26
Forming feedthrough connections for multi-level interconnections metallurgy systems
Grant 4,029,562 - Feng , et al. June 14, 1
1977-06-14
Resist reflow method for making submicron patterned resist masks
Grant 4,022,932 - Feng May 10, 1
1977-05-10
Planarization of integrated circuit surfaces through selective photoresist masking
Grant 3,976,524 - Feng August 24, 1
1976-08-24

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