| Patent | Date |
|---|
Power semiconductor transistor
Grant 11,018,252 - Felsl , et al. May 25, 2 | 2021-05-25 |
Power Semiconductor Transistor
App 20200098911 - Felsl; Hans Peter ; et al. | 2020-03-26 |
IGBT having at least one first type transistor cell and reduced feedback capacitance
Grant 9,741,795 - Sandow , et al. August 22, 2 | 2017-08-22 |
Semiconductor diode and method of manufacturing a semiconductor diode
Grant 9,385,181 - Felsl , et al. July 5, 2 | 2016-07-05 |
Method of manufacturing a multi-channel HEMT
Grant 9,349,829 - Ostermaier , et al. May 24, 2 | 2016-05-24 |
Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field rings
Grant 9,293,524 - Falck , et al. March 22, 2 | 2016-03-22 |
IGBT Having at Least One First Type Transistor Cell and Reduced Feedback Capacitance
App 20160005818 - Sandow; Christian Philipp ; et al. | 2016-01-07 |
Semiconductor Device with a Field Ring Edge Termination Structure and a Separation Trench Arranged Between Different Field Rings
App 20150318347 - Falck; Elmar ; et al. | 2015-11-05 |
IGBT with reduced feedback capacitance
Grant 9,166,027 - Sandow , et al. October 20, 2 | 2015-10-20 |
Semiconductor component with improved dynamic behavior
Grant 9,105,682 - Felsl , et al. August 11, 2 | 2015-08-11 |
Method Of Manufacturing A Multi-channel Hemt
App 20150221748 - Ostermaier; Clemens ; et al. | 2015-08-06 |
Semiconductor Diode and Method of Manufacturing a Semiconductor Diode
App 20150206983 - Felsl; Hans Peter ; et al. | 2015-07-23 |
Method for manufacturing a semiconductor device having a channel region in a trench
Grant 9,048,095 - Mauder , et al. June 2, 2 | 2015-06-02 |
Multi-channel HEMT
Grant 9,035,355 - Ostermaier , et al. May 19, 2 | 2015-05-19 |
IGBT with Reduced Feedback Capacitance
App 20150091053 - Sandow; Christian Philipp ; et al. | 2015-04-02 |
Method for Manufacturing a Semiconductor Device Having a Channel Region in a Trench
App 20140370693 - Mauder; Anton ; et al. | 2014-12-18 |
Semiconductor device having a floating semiconductor zone
Grant 8,872,264 - Pfirsch , et al. October 28, 2 | 2014-10-28 |
Semiconductor device and method for manufacturing the semiconductor device
Grant 8,860,025 - Mauder , et al. October 14, 2 | 2014-10-14 |
Semiconductor device including trenches and method of manufacturing a semiconductor device
Grant 8,853,774 - Cotorogea , et al. October 7, 2 | 2014-10-07 |
Semiconductor device including a dielectric structure in a trench
Grant 8,829,562 - Schulze , et al. September 9, 2 | 2014-09-09 |
Semiconductor Device Including Trenches and Method of Manufacturing a Semiconductor Device
App 20140151789 - Cotorogea; Maria ; et al. | 2014-06-05 |
Semiconductor Device Including a Dielectric Structure in a Trench
App 20140027812 - Schulze; Hans-Joachim ; et al. | 2014-01-30 |
Multi-Channel HEMT
App 20130334573 - Ostermaier; Clemens ; et al. | 2013-12-19 |
Semiconductor Device Having A Floating Semiconductor Zone
App 20130270632 - Pfirsch; Frank ; et al. | 2013-10-17 |
Semiconductor device having a floating semiconductor zone
Grant 8,482,062 - Pfirsch , et al. July 9, 2 | 2013-07-09 |
Semiconductor Device and Method for Manufacturing the Semiconductor Device
App 20130056731 - Mauder; Anton ; et al. | 2013-03-07 |
Semiconductor Device Having A Floating Semiconductor Zone
App 20130001640 - Pfirsch; Frank ; et al. | 2013-01-03 |
Semiconductor device having a floating semiconductor zone
Grant 8,264,033 - Pfirsch , et al. September 11, 2 | 2012-09-11 |
Semiconductor Component with Improved Dynamic Behavior
App 20120217539 - Felsl; Hans Peter ; et al. | 2012-08-30 |
Igbt Module And A Circuit
App 20120098097 - Felsl; Hans-Peter ; et al. | 2012-04-26 |
IGBT having one or more stacked zones formed within a second layer of the IGBT
Grant 7,915,675 - Schulze , et al. March 29, 2 | 2011-03-29 |
Semiconductor Device Having A Floating Semiconductor Zone
App 20110018029 - Pfirsch; Frank ; et al. | 2011-01-27 |
Method for manufacturing a semiconductor substrate including laser annealing
Grant 7,842,590 - Gutt , et al. November 30, 2 | 2010-11-30 |
Soft switching semiconductor component with high robustness and low switching losses
Grant 7,812,427 - Mauder , et al. October 12, 2 | 2010-10-12 |
IGBT Having One or More Stacked Zones Formed within a Second Layer of the IGBT
App 20100148215 - Schulze; Hans-Joachim ; et al. | 2010-06-17 |
Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type
Grant 7,687,891 - Schulze , et al. March 30, 2 | 2010-03-30 |
Method For Manufacturing A Semiconductor Substrate Including Laser Annealing
App 20090267200 - Gutt; Thomas ; et al. | 2009-10-29 |
Semiconductor Device
App 20080283868 - Schulze; Hans-Joachim ; et al. | 2008-11-20 |
Soft Switching Semiconductor Component with High Robustness and Low Switching Losses
App 20070278472 - Mauder; Anton ; et al. | 2007-12-06 |
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