Feldman; Leonard C.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Feldman; Leonard C..The latest application filed is for "systems and methods for real time measurement of surface curvature and thermal expansion of small samples".

Company Profile

0.17.9

Feldman; Leonard C. - New Brunswick NJ
Feldman; Leonard C. - Nashville TN
Feldman; Leonard C. - Berkeley Heights NJ

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Systems and methods for real time measurement of surface curvature and thermal expansion of small samples Grant 11,248,904 - Ermakov , et al. February 15, 2	2022-02-15
Systems and methods for real time measurement of surface curvature and thermal expansion of small samples Grant 11,221,210 - Ermakov , et al. January 11, 2	2022-01-11
Systems And Methods For Real Time Measurement Of Surface Curvature And Thermal Expansion Of Small Samples App 20210164777 - Ermakov; Alexei ; et al.	2021-06-03
Semiconductor devices including polar insulation layer capped by non-polar insulation layer Grant 9,362,367 - Williams , et al. June 7, 2	2016-06-07
Semiconductor Devices Including Polar Insulation Layer Capped by Non-Polar Insulation Layer App 20150318358 - Williams; John R. ; et al.	2015-11-05
Semiconductor devices including polar insulation layer capped by non-polar insulation layer Grant 9,117,817 - Williams , et al. August 25, 2	2015-08-25
Semiconductor Devices Including Polar Insulation Layer Capped By Non-Polar Insulation Layer App 20140077227 - Williams; John R. ; et al.	2014-03-20
Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects Grant 7,727,340 - Chung , et al. June 1, 2	2010-06-01
Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects App 20080128709 - Chung; Gilyong ; et al.	2008-06-05
Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects Grant 7,235,438 - Chung , et al. June 26, 2	2007-06-26
Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects App 20060024978 - Chung; Gilyong Y. ; et al.	2006-02-02
Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defects Grant 6,939,756 - Chung , et al. September 6, 2	2005-09-06
Devices with small-scale channels and the fabrication thereof by etching App 20050103713 - Ramsey, J. Michael ; et al.	2005-05-19
Nanostructured material transport devices and their fabrication by application of molecular coatings to nanoscale channels App 20050023156 - Ramsey, J. Michael ; et al.	2005-02-03
Method for making a semiconductor device including diffusion control Grant 5,500,391 - Bevk , et al. March 19, 1	1996-03-19
Metallized paths on diamond surfaces Grant 5,334,306 - Dautremont-Smith , et al. August 2, 1	1994-08-02
Fabrication of electronic devices by electroless plating of copper onto a metal silicide Grant 5,308,796 - Feldman , et al. May 3, 1	1994-05-03
Erbium doped optical devices Grant 5,249,195 - Feldman , et al. September 28, 1	1993-09-28
Vertical cavity surface emitting lasers with electrically conducting mirrors Grant 5,068,868 - Deppe , et al. November 26, 1	1991-11-26
Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy Grant 4,861,393 - Bean , et al. August 29, 1	1989-08-29
High resistivity group III-V compounds by helium bombardment Grant H147 - Feldman , et al. November 4, 1	1986-11-04
Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy Grant 4,529,455 - Bean , et al. July 16, 1	1985-07-16
Method and apparatus for surface characterization and process control utilizing radiation from desorbed particles Grant 4,393,311 - Feldman , et al. July 12, 1	1983-07-12

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