Faynot; Olivier

Patent Applications and Registrations

Patent applications and USPTO patent grants for Faynot; Olivier.The latest application filed is for "method for producing a field effect transistor with a sige channel by ion implantation".

Company Profile

0.4.4

Faynot; Olivier - Seyssinet-Pariset FR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for producing a field effect transistor with a SiGe channel by ion implantation Grant 8,877,618 - Grenouillet , et al. November 4, 2	2014-11-04
METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR WITH A SiGe CHANNEL BY ION IMPLANTATION App 20140127871 - GRENOUILLET; Laurent ; et al.	2014-05-08
Three-dimensional integrated C-MOS circuit and method for producing same Grant 7,763,915 - Joly , et al. July 27, 2	2010-07-27
Transistor of the I-MOS type comprising two independent gates and method of using such a transistor Grant 7,732,282 - Le Royer , et al. June 8, 2	2010-06-08
Thin layer element and associated fabrication process Grant 7,579,226 - Barbe , et al. August 25, 2	2009-08-25
Transistor of the I-MOS Type Comprising Two Independent Gates and Method of Using Such a Transistor App 20090096028 - Le Royer; Cyrille ; et al.	2009-04-16
Three-dimensional integrated C-MOS circuit and method for producing same App 20070170471 - Joly; Jean-Pierre ; et al.	2007-07-26
Thin layer element and associated fabrication process App 20060060846 - Barbe; Jean-Charles ; et al.	2006-03-23

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