FARR; Jon C.

Patent Applications and Registrations

Patent applications and USPTO patent grants for FARR; Jon C..The latest application filed is for "method of depositing a pre-etch protective layer".

Company Profile

1.5.7

FARR; Jon C. - Tempe AZ
FARR; Jon C. - Vallejo CA
Farr; Jon C. - Sunnyvale CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method Of Depositing A Pre-etch Protective Layer App 20220059359 - WANG; Zhi Gang ; et al.	2022-02-24
Source RF power split inner coil to improve BCD and etch depth performance Grant 10,211,030 - Wang , et al. Feb	2019-02-19
Source Rf Power Split Inner Coil To Improve Bcd And Etch Depth Performance App 20170200585 - WANG; Rongping ; et al.	2017-07-13
Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor Grant 9,070,633 - Nangoy , et al. June 30, 2	2015-06-30
Method And Apparatus For High Efficiency Gas Dissociation In Inductive Coupled Plasma Reactor App 20140256148 - NANGOY; Roy C. ; et al.	2014-09-11
Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor Grant 8,753,474 - Nangoy , et al. June 17, 2	2014-06-17
Method of forming a deep trench in a substrate Grant 8,158,522 - Sirajuddin , et al. April 17, 2	2012-04-17
Method Of Filling A Deep Trench In A Substrate App 20110217832 - Raorane; Digvijay ; et al.	2011-09-08
Method Of Forming A Deep Trench In A Substrate App 20110201205 - Sirajuddin; Khalid M. ; et al.	2011-08-18
Method And Apparatus For High Efficiency Gas Dissociation In Inductive Couple Plasma Reactor App 20110073564 - Nangoy; Roy C. ; et al.	2011-03-31
Method And Apparatus Of A Substrate Etching System And Process App 20090272717 - Pamarthy; Sharma V. ; et al.	2009-11-05

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