loadpatents
name:-0.0049910545349121
name:-0.010336875915527
name:-0.00043702125549316
Fang; ZhiYuan Patent Filings

Fang; ZhiYuan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fang; ZhiYuan.The latest application filed is for "chamber-accumulation extension via in-situ passivation".

Company Profile
0.12.3
  • Fang; ZhiYuan - West Linn OR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Chamber-accumulation Extension Via In-situ Passivation
App 20220267900 - Fang; ZhiYuan ;   et al.
2022-08-25
Methods of depositing smooth and conformal ashable hard mask films
Grant 9,240,320 - Subramonium , et al. January 19, 2
2016-01-19
Diffusion barrier and etch stop films
Grant 8,669,181 - Yu , et al. March 11, 2
2014-03-11
Plasma Clean Method For Deposition Chamber
App 20140053867 - Fang; Zhiyuan ;   et al.
2014-02-27
Plasma clean method for deposition chamber
Grant 8,591,659 - Fang , et al. November 26, 2
2013-11-26
Methods of depositing smooth and conformal ashable hard mask films
Grant 8,435,608 - Subramonium , et al. May 7, 2
2013-05-07
Pulsed PECVD method for modulating hydrogen content in hard mask
Grant 8,110,493 - Subramonium , et al. February 7, 2
2012-02-07
Methods of depositing stable and hermetic ashable hardmask films
Grant 7,981,777 - Subramonium , et al. July 19, 2
2011-07-19
Methods of depositing highly selective transparent ashable hardmask films
Grant 7,981,810 - Subramonium , et al. July 19, 2
2011-07-19
Diffusion barrier and etch stop films
Grant 7,915,166 - Yu , et al. March 29, 2
2011-03-29
Pulsed PECVD method for modulating hydrogen content in hard mask
Grant 7,381,644 - Subramonium , et al. June 3, 2
2008-06-03
Nitrogen-free fluorine-doped silicate glass
App 20040091717 - Li, Ming ;   et al.
2004-05-13

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