loadpatents
Patent applications and USPTO patent grants for Fang; ZhiYuan.The latest application filed is for "chamber-accumulation extension via in-situ passivation".
Patent | Date |
---|---|
Chamber-accumulation Extension Via In-situ Passivation App 20220267900 - Fang; ZhiYuan ;   et al. | 2022-08-25 |
Methods of depositing smooth and conformal ashable hard mask films Grant 9,240,320 - Subramonium , et al. January 19, 2 | 2016-01-19 |
Diffusion barrier and etch stop films Grant 8,669,181 - Yu , et al. March 11, 2 | 2014-03-11 |
Plasma Clean Method For Deposition Chamber App 20140053867 - Fang; Zhiyuan ;   et al. | 2014-02-27 |
Plasma clean method for deposition chamber Grant 8,591,659 - Fang , et al. November 26, 2 | 2013-11-26 |
Methods of depositing smooth and conformal ashable hard mask films Grant 8,435,608 - Subramonium , et al. May 7, 2 | 2013-05-07 |
Pulsed PECVD method for modulating hydrogen content in hard mask Grant 8,110,493 - Subramonium , et al. February 7, 2 | 2012-02-07 |
Methods of depositing stable and hermetic ashable hardmask films Grant 7,981,777 - Subramonium , et al. July 19, 2 | 2011-07-19 |
Methods of depositing highly selective transparent ashable hardmask films Grant 7,981,810 - Subramonium , et al. July 19, 2 | 2011-07-19 |
Diffusion barrier and etch stop films Grant 7,915,166 - Yu , et al. March 29, 2 | 2011-03-29 |
Pulsed PECVD method for modulating hydrogen content in hard mask Grant 7,381,644 - Subramonium , et al. June 3, 2 | 2008-06-03 |
Nitrogen-free fluorine-doped silicate glass App 20040091717 - Li, Ming ;   et al. | 2004-05-13 |
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